GeneSiC Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 4

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
G3R350MT12J SIC MOSFET N-CH 11A TO263-7 GeneSiC Semiconductor	6,745	-	询价单	数据表	G3R™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	11A (Tc)	15V	420mOhm @ 4A, 15V	Surface Mount	2.69V @ 2mA	12 nC @ 15 V	1200 V	±15V	334 pF @ 800 V	-	-	TO-263-7	-	75W (Tc)	-55°C ~ 175°C (TJ)
GA03JT12-247 TRANS SJT 1200V 3A TO247AB GeneSiC Semiconductor	5,546	-	询价单	数据表	-	TO-247-3	Tube	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	3A (Tc) (95°C)	-	460mOhm @ 3A	Through Hole	-	-	1200 V	-	-	-	-	TO-247AB	-	15W (Tc)	175°C (TJ)
GA05JT12-263 TRANS SJT 1200V 15A D2PAK GeneSiC Semiconductor	3,277	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	15A (Tc)	-	-	Surface Mount	-	-	1200 V	-	-	-	-	TO-263-7	-	106W (Tc)	175°C (TJ)
GA05JT12-247 TRANS SJT 1200V 5A TO247AB GeneSiC Semiconductor	6,647	-	询价单	数据表	-	TO-247-3	Tube	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	5A (Tc)	-	280mOhm @ 5A	Through Hole	-	-	1200 V	-	-	-	-	TO-247AB	-	106W (Tc)	175°C (TJ)
GA06JT12-247 TRANS SJT 1200V 6A TO247AB GeneSiC Semiconductor	3,911	-	询价单	数据表	-	TO-247-3	Tube	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	6A (Tc) (90°C)	-	220mOhm @ 6A	Through Hole	-	-	1200 V	-	-	-	-	TO-247AB	-	-	175°C (TJ)
G3R160MT17J SIC MOSFET N-CH 18A TO263-7 GeneSiC Semiconductor	6,975	-	询价单	数据表	G3R™, LoRing™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	18A (Tc)	15V	224mOhm @ 10A, 15V	Surface Mount	2.7V @ 5mA	29 nC @ 15 V	1700 V	±15V	854 pF @ 1000 V	-	-	TO-263-7	-	187W (Tc)	-55°C ~ 175°C (TJ)
G3R75MT12J SIC MOSFET N-CH 42A TO263-7 GeneSiC Semiconductor	2	-	询价单	数据表	G3R™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Obsolete	N-Channel	SiCFET (Silicon Carbide)	42A (Tc)	15V	90mOhm @ 20A, 15V	Surface Mount	2.69V @ 7.5mA	54 nC @ 15 V	1200 V	±15V	1560 pF @ 800 V	-	-	TO-263-7	-	224W (Tc)	-55°C ~ 175°C (TJ)
GA10JT12-263 TRANS SJT 1200V 25A GeneSiC Semiconductor	3,878	-	询价单	数据表	-	-	Tube	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	25A (Tc)	-	120mOhm @ 10A	Surface Mount	-	-	1200 V	-	1403 pF @ 800 V	-	-	-	-	170W (Tc)	175°C (TJ)
GA10JT12-247 TRANS SJT 1200V 10A TO247AB GeneSiC Semiconductor	9,793	-	询价单	数据表	-	TO-247-3	Tube	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	10A (Tc)	-	140mOhm @ 10A	Through Hole	-	-	1200 V	-	-	-	-	TO-247AB	-	170W (Tc)	175°C (TJ)
G3R30MT12J SIC MOSFET N-CH 96A TO263-7 GeneSiC Semiconductor	8,563	-	询价单	数据表	G3R™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	96A (Tc)	15V	36mOhm @ 50A, 15V	Surface Mount	2.69V @ 12mA	155 nC @ 15 V	1200 V	±15V	3901 pF @ 800 V	-	-	TO-263-7	-	459W (Tc)	-55°C ~ 175°C (TJ)

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