GeneSiC Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 2

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
G3F65MT12K 1200V 65M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor	600	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	35A (Tc)	18V	86mOhm @ 15A, 18V	Through Hole	4.3V @ 10mA	55 nC @ 18 V	1200 V	+22V, -10V	1298 pF @ 800 V	AEC-Q101	-	TO-247-4	Automotive	153W (Tc)	-55°C ~ 175°C (TJ)
G3F45MT06D 650V 40M TO-247-3 G3F SIC MOSFET GeneSiC Semiconductor	600	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	-	-	-	Through Hole	-	-	650 V	-	-	-	-	TO-247-3	-	-	-
G3F33MT06J-TR 650V 27M TO-263-7 G3F SIC MOSFET GeneSiC Semiconductor	800	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	80A (Tc)	15V, 18V	38mOhm @ 26A, 18V	Surface Mount	4.3V @ 12mA	81 nC @ 18 V	650 V	+22V, -10V	2394 pF @ 400 V	AEC-Q101	-	TO-263-7	Automotive	261W (Tc)	-55°C ~ 175°C (TJ)
G3F45MT06K 650V 40M TO-247-4 G3F SIC MOSFET GeneSiC Semiconductor	600	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	52A (Tc)	15V, 18V	54mOhm @ 20A, 18V	Through Hole	4.3V @ 8mA	55 nC @ 18 V	650 V	+22V, -10V	1640 pF @ 400 V	AEC-Q101	-	TO-247-4	Automotive	167W (Tc)	-55°C ~ 175°C (TJ)
G3F40MT12J-TR 1200V 40M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor	800	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	59A (Tc)	18V	53mOhm @ 20A, 18V	Surface Mount	4.3V @ 16mA	86 nC @ 18 V	1200 V	+22V, -10V	2023 pF @ 800 V	AEC-Q101	-	TO-263-7	Automotive	270W (Tc)	-55°C ~ 175°C (TJ)
G3F40MT12K 1200V 40M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor	552	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	55A (Tc)	18V	53mOhm @ 20A, 18V	Through Hole	4.3V @ 16mA	86 nC @ 18 V	1200 V	+22V, -10V	2023 pF @ 800 V	AEC-Q101	-	TO-247-4	Automotive	234W (Tc)	-55°C ~ 175°C (TJ)
G3F33MT06K 650V 27M TO-247-4 G3F SIC MOSFET GeneSiC Semiconductor	600	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	74A (Tc)	15V, 18V	38mOhm @ 26A, 18V	Through Hole	4.3V @ 12mA	81 nC @ 18 V	650 V	+22V, -10V	2394 pF @ 400 V	AEC-Q101	-	TO-247-4	Automotive	227W (Tc)	-55°C ~ 175°C (TJ)
G3R40MT12J-TR 1200V 40M TO-263-7 G3R SIC MOSFE GeneSiC Semiconductor	630	-	询价单	数据表	G3R™, LoRing™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	66A (Tc)	15V, 18V	45mOhm @ 35A, 18V	Surface Mount	2.7V @ 18mA	88 nC @ 15 V	1200 V	+22V, -10V	2897 pF @ 800 V	-	-	TO-263-7	-	330W (Tc)	-55°C ~ 175°C (TJ)
G3F34MT12J-TR 1200V 34M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor	800	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	68A (Tc)	18V	45mOhm @ 26A, 18V	Surface Mount	4.3V @ 18mA	104 nC @ 18 V	1200 V	+22V, -10V	2418 pF @ 800 V	AEC-Q101	-	TO-263-7	Automotive	300W (Tc)	-55°C ~ 175°C (TJ)
G3F25MT06J-TR 650V 20M TO-263-7 G3F SIC MOSFET GeneSiC Semiconductor	800	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	108A (Tc)	15V, 18V	27.5mOhm @ 35A, 18V	Surface Mount	4.3V @ 15mA	108 nC @ 18 V	650 V	+22V, -10V	2939 pF @ 400 V	AEC-Q101	-	TO-263-7	Automotive	343W (Tc)	-55°C ~ 175°C (TJ)

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