GeneSiC Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 1

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
G3R350MT12J-TR 1200V 350M TO-263-7 G3R SIC MOSF GeneSiC Semiconductor	623	-	询价单	数据表	G3R™, LoRing™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	10A (Tc)	15V, 18V	395mOhm @ 4A, 18V	Surface Mount	2.7V @ 2mA	10 nC @ 15 V	1200 V	+22V, -10V	331 pF @ 800 V	-	-	TO-263-7	-	64W (Tc)	-55°C ~ 175°C (TJ)
G2R1000MT17J-TR 1700V 1000M TO-263-7 G2R SIC MOS GeneSiC Semiconductor	606	-	询价单	数据表	G2R™, LoRing™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	5A (Tc)	20V	1.2Ohm @ 2A, 20V	Surface Mount	4V @ 2mA	11 nC @ 20 V	1700 V	+20V, -5V	139 pF @ 1000 V	-	-	TO-263-7	-	44W (Tc)	-55°C ~ 175°C (TJ)
G3F135MT12J-TR 1200V 135M TO-263-7 G3F SIC MOSF GeneSiC Semiconductor	800	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	18A (Tc)	18V	180mOhm @ 8A, 18V	Surface Mount	4.3V @ 5mA	27 nC @ 18 V	1200 V	+22V, -10V	575 pF @ 800 V	AEC-Q101	-	TO-263-7	Automotive	87W (Tc)	-55°C ~ 175°C (TJ)
G3F60MT06J-TR 650V 55M TO-263-7 G3F SIC MOSFET GeneSiC Semiconductor	800	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	44A (Tc)	15V, 18V	75mOhm @ 15A, 18V	Surface Mount	4.3V @ 7mA	45 nC @ 18 V	650 V	+22V, -10V	1322 pF @ 400 V	AEC-Q101	-	TO-263-7	Automotive	155W (Tc)	-55°C ~ 175°C (TJ)
G3F75MT12J-TR 1200V 75M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor	800	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	31A (Tc)	18V	100mOhm @ 12A, 18V	Surface Mount	4.3V @ 9mA	48 nC @ 18 V	1200 V	+22V, -10V	988 pF @ 800 V	AEC-Q101	-	TO-263-7	Automotive	140W (Tc)	-55°C ~ 175°C (TJ)
G3F75MT12K 1200V 75M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor	600	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	30A (Tc)	18V	100mOhm @ 12A, 18V	Through Hole	4.3V @ 9mA	48 nC @ 18 V	1200 V	+22V, -10V	988 pF @ 800 V	AEC-Q101	-	TO-247-4	Automotive	127W (Tc)	-55°C ~ 175°C (TJ)
G3F60MT06D 650V 55M TO-247-3 G3F SIC MOSFET GeneSiC Semiconductor	600	-	询价单	数据表	-	-	Tube	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
G3F60MT06K 650V 55M TO-247-4 G3F SIC MOSFET GeneSiC Semiconductor	600	-	询价单	数据表	-	TO-247-4	Tube	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	42A (Tc)	15V, 18V	75mOhm @ 15A, 18V	Through Hole	4.3V @ 7mA	45 nC @ 18 V	650 V	+22V, -10V	1322 pF @ 400 V	AEC-Q101	-	TO-247-4	Automotive	140W (Tc)	-55°C ~ 175°C (TJ)
G3F45MT06J-TR 650V 40M TO-263-7 G3F SIC MOSFET GeneSiC Semiconductor	800	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	56A (Tc)	15V, 18V	54mOhm @ 20A, 18V	Surface Mount	4.3V @ 8mA	55 nC @ 18 V	650 V	+22V, -10V	1640 pF @ 400 V	AEC-Q101	-	TO-263-7	Automotive	187W (Tc)	-55°C ~ 175°C (TJ)
G3F65MT12J-TR 1200V 65M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor	800	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiC (Silicon Carbide Junction Transistor)	37A (Tc)	18V	86mOhm @ 15A, 18V	Surface Mount	4.3V @ 10mA	55 nC @ 18 V	1200 V	+22V, -10V	1298 pF @ 800 V	AEC-Q101	-	TO-263-7	Automotive	171W (Tc)	-55°C ~ 175°C (TJ)

共 76 条记录«上一页12 3 4...8 下一页»