GeneSiC Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 6

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
GA50JT12-263 TRANSISTOR 1200V 100A TO263-7 GeneSiC Semiconductor	6,512	-	询价单	数据表	*	-	Tube	Obsolete	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
G2R120MT33J-TR 3300V 120M TO-263-7 G2R SIC MOSF GeneSiC Semiconductor	3,585	-	询价单	数据表	LoRing™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tape & Reel (TR)	Active	N-Channel	SiCFET (Silicon Carbide)	33A (Tc)	20V	156mOhm @ 15A, 20V	Surface Mount	3.5V @ 4mA	130 nC @ 20 V	3300 V	+20V, -5V	3009 pF @ 1000 V	-	-	TO-263-7	-	366W (Tc)	-55°C ~ 175°C (TJ)
G2R120MT33J SIC MOSFET N-CH TO263-7 GeneSiC Semiconductor	2,452	-	询价单	数据表	G2R™	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	35A	20V	156mOhm @ 20A, 20V	Surface Mount	-	145 nC @ 20 V	3300 V	+25V, -10V	3706 pF @ 1000 V	-	-	TO-263-7	-	-	-55°C ~ 175°C (TJ)
GA100JT12-227 TRANS SJT 1200V 160A SOT227 GeneSiC Semiconductor	4,741	-	询价单	数据表	-	SOT-227-4, miniBLOC	Tube	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	160A (Tc)	-	10mOhm @ 100A	Chassis Mount	-	-	1200 V	-	14400 pF @ 800 V	-	-	SOT-227	-	535W (Tc)	-55°C ~ 175°C (TJ)
GA50JT17-247 TRANS SJT 1700V 100A TO247 GeneSiC Semiconductor	3,478	-	询价单	数据表	-	TO-247-3	Tube	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	100A (Tc)	-	25mOhm @ 50A	Through Hole	-	-	1700 V	-	-	-	-	TO-247	-	583W (Tc)	175°C (TJ)
2N7636-GA TRANS SJT 650V 4A TO276 GeneSiC Semiconductor	6,228	-	询价单	数据表	-	TO-276AA	Bulk	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	4A (Tc) (165°C)	-	415mOhm @ 4A	Surface Mount	-	-	650 V	-	324 pF @ 35 V	-	-	TO-276	-	125W (Tc)	-55°C ~ 225°C (TJ)
2N7635-GA TRANS SJT 650V 4A TO257 GeneSiC Semiconductor	7,908	-	询价单	数据表	-	TO-257-3	Bulk	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	4A (Tc) (165°C)	-	415mOhm @ 4A	Through Hole	-	-	650 V	-	324 pF @ 35 V	-	-	TO-257	-	47W (Tc)	-55°C ~ 225°C (TJ)
2N7638-GA TRANS SJT 650V 8A TO276 GeneSiC Semiconductor	4,432	-	询价单	数据表	-	TO-276AA	Bulk	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	8A (Tc) (158°C)	-	170mOhm @ 8A	Surface Mount	-	-	650 V	-	720 pF @ 35 V	-	-	TO-276	-	200W (Tc)	-55°C ~ 225°C (TJ)
2N7637-GA TRANS SJT 650V 7A TO257 GeneSiC Semiconductor	4,536	-	询价单	数据表	-	TO-257-3	Bulk	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	7A (Tc) (165°C)	-	170mOhm @ 7A	Through Hole	-	-	650 V	-	720 pF @ 35 V	-	-	TO-257	-	80W (Tc)	-55°C ~ 225°C (TJ)
GA100JT17-227 TRANS SJT 1700V 160A SOT227 GeneSiC Semiconductor	3,584	-	询价单	数据表	-	SOT-227-4, miniBLOC	Tube	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	160A (Tc)	-	10mOhm @ 100A	Chassis Mount	-	-	1700 V	-	14400 pF @ 800 V	-	-	SOT-227	-	535W (Tc)	-55°C ~ 175°C (TJ)

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