GeneSiC Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 5

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
GA04JT17-247 TRANS SJT 1700V 4A TO247AB GeneSiC Semiconductor	3,694	-	询价单	数据表	-	TO-247-3	Tube	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	4A (Tc) (95°C)	-	480mOhm @ 4A	Through Hole	-	-	1700 V	-	-	-	-	TO-247AB	-	106W (Tc)	175°C (TJ)
GA20JT12-247 TRANS SJT 1200V 20A TO247AB GeneSiC Semiconductor	6,962	-	询价单	数据表	-	TO-247-3	Tube	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	20A (Tc)	-	70mOhm @ 20A	Through Hole	-	-	1200 V	-	-	-	-	TO-247AB	-	282W (Tc)	175°C (TJ)
GA20JT12-263 TRANS SJT 1200V 45A D2PAK GeneSiC Semiconductor	8,894	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	45A (Tc)	-	60mOhm @ 20A	Surface Mount	-	-	1200 V	-	3091 pF @ 800 V	-	-	TO-263-7	-	282W (Tc)	175°C (TJ)
GA10SICP12-263 TRANS SJT 1200V 25A D2PAK GeneSiC Semiconductor	3,835	-	询价单	数据表	-	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Tube	Active	-	SiC (Silicon Carbide Junction Transistor)	25A (Tc)	-	100mOhm @ 10A	Surface Mount	-	-	1200 V	-	1403 pF @ 800 V	-	-	TO-263-7	-	170W (Tc)	175°C (TJ)
GA20SICP12-247 TRANS SJT 1200V 45A TO247AB GeneSiC Semiconductor	5,702	-	询价单	数据表	-	TO-247-3	Tube	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	45A (Tc)	-	50mOhm @ 20A	Through Hole	-	-	1200 V	-	3091 pF @ 800 V	-	-	TO-247AB	-	282W (Tc)	-55°C ~ 175°C (TJ)
GA08JT17-247 TRANS SJT 1700V 8A TO247AB GeneSiC Semiconductor	4,178	-	询价单	数据表	-	TO-247-3	Tube	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	8A (Tc) (90°C)	-	250mOhm @ 8A	Through Hole	-	-	1700 V	-	-	-	-	TO-247AB	-	48W (Tc)	175°C (TJ)
GA05JT01-46 TRANS SJT 100V 9A TO46 GeneSiC Semiconductor	5,667	-	询价单	数据表	-	TO-46-3	Bulk	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	9A (Tc)	-	240mOhm @ 5A	Through Hole	-	-	100 V	-	-	-	-	TO-46	-	20W (Tc)	-55°C ~ 225°C (TJ)
GA05JT03-46 TRANS SJT 300V 9A TO46 GeneSiC Semiconductor	9,851	-	询价单	数据表	-	TO-46-3	Bulk	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	9A (Tc)	-	240mOhm @ 5A	Through Hole	-	-	300 V	-	-	-	-	TO-46	-	20W (Tc)	-55°C ~ 225°C (TJ)
GA16JT17-247 TRANS SJT 1700V 16A TO247AB GeneSiC Semiconductor	2,326	-	询价单	数据表	-	TO-247-3	Tube	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	16A (Tc) (90°C)	-	110mOhm @ 16A	Through Hole	-	-	1700 V	-	-	-	-	TO-247AB	-	282W (Tc)	175°C (TJ)
GA50JT12-247 TRANS SJT 1200V 100A TO247AB GeneSiC Semiconductor	9,341	-	询价单	数据表	-	TO-247-3	Tube	Obsolete	-	SiC (Silicon Carbide Junction Transistor)	100A (Tc)	-	25mOhm @ 50A	Through Hole	-	-	1200 V	-	7209 pF @ 800 V	-	-	TO-247AB	-	583W (Tc)	175°C (TJ)

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