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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SSM6L820R,LFMOSFET N/P-CH 30V/20V 4A 6TSOPF Toshiba Semiconductor and Storage |
5,875 | - |
|
数据表 |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel | 30V, 20V | 4A (Ta) | 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V | 1V @ 1mA, 1.2V @ 1mA | 3.2nC @ 4.5V, 6.7nC @ 4.5V | - | 310pF @ 15V, 480pF @ 10V | 1.4W (Ta) | 6-TSOP-F | 150°C | Surface Mount | - | - |
|
|
SSM14N956L,EFFMOSFET 2N-CH 12V 20A TCSPED Toshiba Semiconductor and Storage |
8,479 | - |
|
数据表 |
- | 14-SMD, No Lead | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel | 12V | 20A (Ta) | 1.35mOhm @ 10A, 4.5V | 1.4V @ 1.57mA | 76nC @ 4V | - | - | 1.33W (Ta) | TCSPED-302701 | 150°C | Surface Mount | - | - |
|
|
SSM10N961L,ELFMOSFET 2N-CH 30V 9A TCSPAG Toshiba Semiconductor and Storage |
8,885 | - |
|
数据表 |
- | 10-XFLGA, CSP | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | 30V | 9A (Ta) | - | 2.3V @ 250µA | 17.3nC @ 10V | - | - | 880mW (Ta) | TCSPAG-341501 | 150°C | Surface Mount | - | - |
|
SSM6N7002BFE,LMMOSFET 2N-CH 60V 0.2A ES6 Toshiba Semiconductor and Storage |
4,716 | - |
|
数据表 |
- | SOT-563, SOT-666 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 60V | 200mA | 2.1Ohm @ 500mA, 10V | 3.1V @ 250µA | - | Logic Level Gate | 17pF @ 25V | 150mW | ES6 | 150°C (TJ) | Surface Mount | - | - |
|
SSM6P69NU,LFMOSFET 2P-CH 20V 4A 6DFN Toshiba Semiconductor and Storage |
2 | - |
|
数据表 |
- | 6-WDFN Exposed Pad | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 20V | 4A (Ta) | 45mOhm @ 3.5A, 10V | 1.2V @ 1mA | 6.74nC @ 4.5V | Logic Level Gate, 1.8V Drive | 480pF @ 10V | 1W (Ta) | 6-µDFN (2x2) | 150°C | Surface Mount | - | - |
|
|
SSM6N68NU,LFMOSFET 2N-CH 30V 4A 6DFN Toshiba Semiconductor and Storage |
16 | - |
|
数据表 |
- | 6-WDFN Exposed Pad | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 4A (Ta) | 84mOhm @ 2A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | Logic Level Gate, 1.8V Drive | 129pF @ 15V | 2W (Ta) | 6-µDFN (2x2) | 150°C | Surface Mount | - | - |
|
SSM6N35FE,LMMOSFET 2N-CH 20V 0.18A ES6 Toshiba Semiconductor and Storage |
2,959 | - |
|
数据表 |
- | SOT-563, SOT-666 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 180mA | 3Ohm @ 50mA, 4V | 1V @ 1mA | - | Logic Level Gate | 9.5pF @ 3V | 150mW | ES6 | 150°C (TJ) | Surface Mount | - | - |
|
SSM6N62TU,LXHFMOSFET 2N-CH 20V 0.8A UF6 Toshiba Semiconductor and Storage |
7,941 | - |
|
数据表 |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 800mA (Ta) | 85mOhm @ 800mA, 4.5V | 1V @ 1mA | 2nC @ 4.5V | Logic Level Gate, 1.2V Drive | 177pF @ 10V | 500mW (Ta) | UF6 | 150°C | Surface Mount | Automotive | AEC-Q101 |
|
SSM6N951L,EFFMOSFET 2N-CH 12V 8A 6TCSPA Toshiba Semiconductor and Storage |
3,387 | - |
|
数据表 |
- | 6-SMD, No Lead | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Common Drain | 12V | 8A | 5.1mOhm @ 8A, 4.5V | - | - | - | - | - | 6-TCSPA (2.14x1.67) | - | Surface Mount | - | - |
|
|
SSM6N15AFE,LMMOSFET 2N-CH 30V 0.1A ES6 Toshiba Semiconductor and Storage |
10 | - |
|
数据表 |
- | SOT-563, SOT-666 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 100mA | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | - | Logic Level Gate | 13.5pF @ 3V | 150mW | ES6 | 150°C (TJ) | Surface Mount | - | - |
