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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SSM6N35AFE,LFMOSFET 2N-CH 20V 0.25A ES6 Toshiba Semiconductor and Storage |
63,479 | - |
|
数据表 |
- | SOT-563, SOT-666 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 250mA (Ta) | 1.1Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | Logic Level Gate, 1.2V Drive | 36pF @ 10V | 250mW | ES6 | 150°C | Surface Mount | - | - |
|
|
SSM6P35AFE,LFMOSFET 2P-CH 20V 0.25A ES6 Toshiba Semiconductor and Storage |
6,009 | - |
|
数据表 |
U-MOSVII | SOT-563, SOT-666 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 20V | 250mA (Ta) | 1.4Ohm @ 150mA, 4.5V | 1V @ 100µA | - | Logic Level Gate, 1.2V Drive | 42pF @ 10V | 150mW (Ta) | ES6 | 150°C | Surface Mount | - | - |
|
|
SSM6N44FE,LMMOSFET 2N-CH 30V 0.1A ES6 Toshiba Semiconductor and Storage |
135,240 | - |
|
数据表 |
- | SOT-563, SOT-666 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 100mA | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | - | Logic Level Gate | 8.5pF @ 3V | 150mW | ES6 | 150°C (TJ) | Surface Mount | - | - |
|
|
SSM6L36FE,LMMOSFET N/P-CH 20V 0.5A ES6 Toshiba Semiconductor and Storage |
39,399 | - |
|
数据表 |
- | SOT-563, SOT-666 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel | 20V | 500mA, 330mA | 630mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | Logic Level Gate | 46pF @ 10V | 150mW | ES6 | 150°C (TJ) | Surface Mount | - | - |
|
SSM6N43FU,LFMOSFET 2N-CH 20V 0.5A US6 Toshiba Semiconductor and Storage |
8,860 | - |
|
数据表 |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 500mA | 630mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | Logic Level Gate, 1.5V Drive | 46pF @ 10V | 200mW | US6 | 150°C (TJ) | Surface Mount | - | - |
|
|
SSM6N56FE,LMMOSFET 2N-CH 20V 0.8A ES6 Toshiba Semiconductor and Storage |
34,922 | - |
|
数据表 |
- | SOT-563, SOT-666 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 800mA | 235mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | Logic Level Gate, 1.5V Drive | 55pF @ 10V | 150mW | ES6 | 150°C (TJ) | Surface Mount | - | - |
|
|
SSM6N17FU(TE85L,F)MOSFET 2N-CH 50V 0.1A US6 Toshiba Semiconductor and Storage |
1,027 | - |
|
数据表 |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 50V | 100mA (Ta) | 20Ohm @ 10mA, 4V | 1.5V @ 1µA | - | - | 7pF @ 3V | 200mW (Ta) | US6 | 150°C | Surface Mount | - | - |
|
|
SSM6L35FU(TE85L,F)MOSFET N/P-CH 20V 0.18A US6 Toshiba Semiconductor and Storage |
2,876 | - |
|
数据表 |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel | 20V | 180mA, 100mA | 3Ohm @ 50mA, 4V | 1V @ 1mA | - | Logic Level Gate, 1.2V Drive | 9.5pF @ 3V | 200mW | US6 | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
SSM6P15FE(TE85L,F)MOSFET 2P-CH 30V 0.1A ES6 Toshiba Semiconductor and Storage |
14,890 | - |
|
数据表 |
- | SOT-563, SOT-666 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 30V | 100mA | 12Ohm @ 10mA, 4V | 1.7V @ 100µA | - | Logic Level Gate | 9.1pF @ 3V | 150mW | ES6 | 150°C (TJ) | Surface Mount | - | - |
|
SSM6N40TU,LFMOSFET 2N-CH 30V 1.6A UF6 Toshiba Semiconductor and Storage |
7,754 | - |
|
数据表 |
- | 6-SMD, Flat Leads | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 1.6A (Ta) | 122mOhm @ 1A, 10V | 2.6V @ 1mA | 5.1nC @ 10V | Logic Level Gate, 4V Drive | 180pF @ 15V | 500mW (Ta) | UF6 | 150°C | Surface Mount | - | - |
