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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SSM6N7002KFU,LFMOSFET 2N-CH 60V 0.3A US6 Toshiba Semiconductor and Storage |
239,024 | - |
|
数据表 |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 60V | 300mA | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6nC @ 4.5V | - | 40pF @ 10V | 285mW | US6 | 150°C (TJ) | Surface Mount | - | - |
|
SSM6L56FE,LMMOSFET N/P-CH 20V 0.8A ES6 Toshiba Semiconductor and Storage |
58,717 | - |
|
数据表 |
- | SOT-563, SOT-666 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel | 20V | 800mA (Ta) | 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 10V | Logic Level Gate, 1.5V Drive | 55pF @ 10V, 100pF @ 10V | 150mW (Ta) | ES6 | 150°C | Surface Mount | - | - |
|
SSM6N37FU,LFMOSFET 2N-CH 20V 0.25A US6 Toshiba Semiconductor and Storage |
147,393 | - |
|
数据表 |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 250mA (Ta) | 2.2Ohm @ 100mA, 4.5V | 1V @ 1mA | - | Logic Level Gate, 1.5V Drive | 12pF @ 10V | 300mW | US6 | 150°C | Surface Mount | - | - |
|
|
SSM6L14FE(TE85L,F)MOSFET N/P-CH 20V 0.8A ES6 Toshiba Semiconductor and Storage |
27,811 | - |
|
数据表 |
- | SOT-563, SOT-666 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel | 20V | 800mA (Ta), 720mA (Ta) | 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V | 1V @ 1mA | 2nC @ 4.5V, 1.76nC @ 4.5V | Logic Level Gate, 1.5V Drive | 90pF @ 10V, 110pF @ 10V | 150mW (Ta) | ES6 | 150°C | Surface Mount | - | - |
|
|
SSM6L09FUTE85LFMOSFET N/P-CH 30V 0.4A US6 Toshiba Semiconductor and Storage |
27,660 | - |
|
数据表 |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Not For New Designs | MOSFET (Metal Oxide) | N and P-Channel | 30V | 400mA, 200mA | 700mOhm @ 200MA, 10V | 1.8V @ 100µA | - | Logic Level Gate | 20pF @ 5V | 300mW | US6 | 150°C (TJ) | Surface Mount | - | - |
|
SSM6N58NU,LFMOSFET 2N-CH 30V 4A 6UDFN Toshiba Semiconductor and Storage |
143,314 | - |
|
数据表 |
- | 6-WDFN Exposed Pad | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 4A | 84mOhm @ 2A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | Logic Level Gate, 1.8V Drive | 129pF @ 15V | 1W | 6-UDFN (2x2) | 150°C (TJ) | Surface Mount | - | - |
|
|
SSM6N57NU,LFMOSFET 2N-CH 30V 4A 6DFN Toshiba Semiconductor and Storage |
86,896 | - |
|
数据表 |
- | 6-WDFN Exposed Pad | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 4A | 46mOhm @ 2A, 4.5V | 1V @ 1mA | 4nC @ 4.5V | - | 310pF @ 10V | 1W | 6-µDFN (2x2) | 150°C (TJ) | Surface Mount | - | - |
|
|
SSM6N7002CFU,LFMOSFET 2N-CH 60V 0.17A US6 Toshiba Semiconductor and Storage |
26,047 | - |
|
数据表 |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 60V | 170mA | 3.9Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35nC @ 4.5V | - | 17pF @ 10V | 285mW | US6 | 150°C (TJ) | Surface Mount | - | - |
|
|
SSM6N15AFU,LFMOSFET 2N-CH 30V 0.1A US6 Toshiba Semiconductor and Storage |
23,544 | - |
|
数据表 |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 100mA | 3.6Ohm @ 10mA, 4V | 1.5V @ 100µA | - | Logic Level Gate | 13.5pF @ 3V | 300mW | US6 | 150°C (TJ) | Surface Mount | - | - |
|
|
SSM6P15FU,LFMOSFET 2P-CH 30V 0.1A US6 Toshiba Semiconductor and Storage |
30,950 | - |
|
数据表 |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 30V | 100mA | 12Ohm @ 10mA, 4V | 1.7V @ 100µA | - | - | 9.1pF @ 3V | 200mW (Ta) | US6 | 150°C | Surface Mount | - | - |
