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场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证
SSM5P15FU,LF

SSM5P15FU,LF

MOSFET 2P-CH 30V 0.1A USV

Toshiba Semiconductor and Storage

2,998 -
SSM5P15FU,LF

数据表

- 5-TSSOP, SC-70-5, SOT-353 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) 30V 100mA (Ta) 12Ohm @ 10mA, 4V 1.7V @ 100µA - - 9.1pF @ 3V 200mW (Ta) USV 150°C Surface Mount - -
SSM5N16FU,LF

SSM5N16FU,LF

MOSFET 2N-CH 20V 0.1A USV

Toshiba Semiconductor and Storage

2,995 -
SSM5N16FU,LF

数据表

- 5-TSSOP, SC-70-5, SOT-353 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) 20V 100mA (Ta) 3Ohm @ 10mA, 4V 1.1V @ 100µA - - 9.3pF @ 3V 200mW (Ta) USV 150°C Surface Mount - -
SSM6N48FU,LF

SSM6N48FU,LF

MOSFET 2N-CH 30V 0.1A US6

Toshiba Semiconductor and Storage

2,710 -
SSM6N48FU,LF

数据表

U-MOSIII 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 100mA (Ta) 3.2Ohm @ 10mA, 4V 1.5V @ 100µA - - 15.1pF @ 3V 300mW US6 150°C Surface Mount - -
SSM6N36FE,LM

SSM6N36FE,LM

MOSFET 2N-CH 20V 0.5A ES6

Toshiba Semiconductor and Storage

1,768 -
SSM6N36FE,LM

数据表

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) 20V 500mA 630mOhm @ 200mA, 5V 1V @ 1mA 1.23nC @ 4V Logic Level Gate 46pF @ 10V 150mW ES6 150°C (TJ) Surface Mount - -
SSM6P35AFU,LF

SSM6P35AFU,LF

MOSFET 2P-CH 20V 0.25A US6

Toshiba Semiconductor and Storage

5,990 -
SSM6P35AFU,LF

数据表

U-MOSVII 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) 20V 250mA (Ta) 1.4Ohm @ 150mA, 4.5V 1V @ 100µA - Logic Level Gate, 1.2V Drive 42pF @ 10V 285mW (Ta) US6 150°C Surface Mount - -
SSM6N55NU,LF

SSM6N55NU,LF

MOSFET 2N-CH 30V 4A 6DFN

Toshiba Semiconductor and Storage

2,353 -
SSM6N55NU,LF

数据表

- 6-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 4A 46mOhm @ 4A, 10V 2.5V @ 100µA 2.5nC @ 4.5V Logic Level Gate 280pF @ 15V 1W 6-µDFN (2x2) 150°C (TJ) Surface Mount - -
SSM6N39TU,LF

SSM6N39TU,LF

MOSFET 2N-CH 20V 1.6A UF6

Toshiba Semiconductor and Storage

2,625 -
SSM6N39TU,LF

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) 20V 1.6A (Ta) 119mOhm @ 1A, 4V 1V @ 1mA 7.5nC @ 4V - 260pF @ 10V 500mW UF6 150°C Surface Mount - -
SSM6P47NU,LF

SSM6P47NU,LF

MOSFET 2P-CH 20V 4A 6DFN

Toshiba Semiconductor and Storage

1,903 -
SSM6P47NU,LF

数据表

- 6-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) 20V 4A 95mOhm @ 1.5A, 4.5V 1V @ 1mA 4.6nC @ 4.5V Logic Level Gate 290pF @ 10V 1W 6-µDFN (2x2) 150°C (TJ) Surface Mount - -
SSM6N61NU,LF

SSM6N61NU,LF

MOSFET 2N-CH 20V 4A 6UDFNB

Toshiba Semiconductor and Storage

6,933 -
SSM6N61NU,LF

数据表

- 6-WDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) 20V 4A 33mOhm @ 4A, 4.5V 1V @ 1mA 3.6nC @ 4.5V Logic Level Gate, 1.5V Drive 410pF @ 10V 2W 6-UDFNB (2x2) -55°C ~ 150°C (TJ) Surface Mount - -
SSM6L807R,LF

SSM6L807R,LF

MOSFET N/P-CH 30V 4A 6TSOPF

Toshiba Semiconductor and Storage

6,000 -
SSM6L807R,LF

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel 30V 4A (Ta) 39.1mOhm @ 2A, 4.5V 1V @ 1mA 3.2nC @ 4.5V, 6.74nC @ 4.5V - 310pF @ 15V, 480pF @ 10V 1.4W (Ta) 6-TSOP-F 150°C Surface Mount - -
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