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场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证
TPCF8201(TE85L,F,M

TPCF8201(TE85L,F,M

MOSFET 2N-CH 20V 3A VS-8

Toshiba Semiconductor and Storage

9,519 -
TPCF8201(TE85L,F,M

数据表

- 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 20V 3A 49mOhm @ 1.5A, 4.5V 1.2V @ 200µA 7.5nC @ 5V Logic Level Gate 590pF @ 10V 330mW VS-8 (2.9x1.5) 150°C (TJ) Surface Mount - -
TPC8207(TE12L)

TPC8207(TE12L)

MOSFET 2N-CH 20V 6A 8SOP

Toshiba Semiconductor and Storage

5,015 -
TPC8207(TE12L)

数据表

- 8-SOIC (0.173", 4.40mm Width) Digi-Reel® Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 20V 6A 20mOhm @ 4.8A, 4V 1.2V @ 200µA 22nC @ 5V Logic Level Gate 2010pF @ 10V 750mW 8-SOP (5.5x6.0) - Surface Mount - -
TPC8405(TE12L,Q,M)

TPC8405(TE12L,Q,M)

MOSFET N/P-CH 30V 6A/4.5A 8SOP

Toshiba Semiconductor and Storage

2,375 -
TPC8405(TE12L,Q,M)

数据表

- 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel 30V 6A, 4.5A 26mOhm @ 3A, 10V 2V @ 1mA 27nC @ 10V Logic Level Gate 1240pF @ 10V 450mW 8-SOP (5.5x6.0) 150°C (TJ) Surface Mount - -
TPCF8304(TE85L,F,M

TPCF8304(TE85L,F,M

MOSFET 2P-CH 30V 3.2A VS-8

Toshiba Semiconductor and Storage

9,524 -
TPCF8304(TE85L,F,M

数据表

- 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) 30V 3.2A 72mOhm @ 1.6A, 10V 1.2V @ 1mA 14nC @ 10V Logic Level Gate 600pF @ 10V 330mW VS-8 (2.9x1.5) 150°C (TJ) Surface Mount - -
TPCP8203(TE85L,F)

TPCP8203(TE85L,F)

MOSFET 2N-CH 40V 4.7A PS-8

Toshiba Semiconductor and Storage

6,493 -
TPCP8203(TE85L,F)

数据表

- 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 40V 4.7A - 2.5V @ 1mA - - - 360mW PS-8 (2.9x2.4) 150°C (TJ) Surface Mount - -
TPCP8401(TE85L,F)

TPCP8401(TE85L,F)

MOSFET N/P-CH 20V/12V 0.1A PS-8

Toshiba Semiconductor and Storage

9,897 -
TPCP8401(TE85L,F)

数据表

- 8-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) N and P-Channel 20V, 12V 100mA, 5.5A 3Ohm @ 10mA, 4V 1.1V @ 100µA - Logic Level Gate 9.3pF @ 3V 1W PS-8 (2.9x2.4) 150°C (TJ) Surface Mount - -
TPC8212-H(TE12LQ,M

TPC8212-H(TE12LQ,M

MOSFET 2N-CH 30V 6A 8SOP

Toshiba Semiconductor and Storage

4,004 -
TPC8212-H(TE12LQ,M

数据表

- 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 6A 21mOhm @ 3A, 10V 2.3V @ 1mA 16nC @ 10V Logic Level Gate 840pF @ 10V 450mW 8-SOP (5.5x6.0) 150°C (TJ) Surface Mount - -
TPC8213-H(TE12LQ,M

TPC8213-H(TE12LQ,M

MOSFET 2N-CH 60V 5A 8SOP

Toshiba Semiconductor and Storage

4,331 -
TPC8213-H(TE12LQ,M

数据表

- 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 60V 5A 50mOhm @ 2.5A, 10V 2.3V @ 1mA 11nC @ 10V Logic Level Gate 625pF @ 10V 450mW 8-SOP (5.5x6.0) 150°C (TJ) Surface Mount - -
SSM6N37CTD(TPL3)

SSM6N37CTD(TPL3)

MOSFET 2N-CH 20V 0.25A CST6D

Toshiba Semiconductor and Storage

8,489 -
SSM6N37CTD(TPL3)

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 20V 250mA 2.2Ohm @ 100mA, 4.5V 1V @ 1mA - Logic Level Gate 12pF @ 10V 140mW CST6D 150°C (TJ) Surface Mount - -
TPC8221-H,LQ(S

TPC8221-H,LQ(S

MOSFET 2N-CH 30V 6A 8SOP

Toshiba Semiconductor and Storage

5,560 -
TPC8221-H,LQ(S

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 6A 25mOhm @ 3A, 10V 2.3V @ 100µA 12nC @ 10V - 830pF @ 10V 450mW 8-SOP 150°C (TJ) Surface Mount - -
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