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场效应晶体管（FET）、MOSFET 阵列
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 配置 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | FET 特性 | 输入电容 (Ciss)（最大值）@ Vds | 功率 - 最大值 | 供应商设备封装 | 工作温度 | 安装类型 | 等级 | 认证 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SSM6P56FE,LMMOSFET 2P-CH 20V 0.8A ES6 Toshiba Semiconductor and Storage |
2,704 | - |
|
数据表 |
- | SOT-563, SOT-666 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel | 20V | 800mA (Ta) | 390mOhm @ 800mA, 4.5V | 1V @ 1mA | 1.6nC @ 4.5V | - | 100pF @ 10V | 150mW | ES6 | 150°C | Surface Mount | - | - |
|
TPC8208(TE12L,Q,M)MOSFET 2N-CH 20V 5A 8SOP Toshiba Semiconductor and Storage |
3,942 | - |
|
数据表 |
- | 8-SOIC (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 5A | 50mOhm @ 2.5A, 4V | 1.2V @ 200µA | 9.5nC @ 5V | Logic Level Gate | 780pF @ 10V | 450mW | 8-SOP (5.5x6.0) | 150°C (TJ) | Surface Mount | - | - |
|
|
TPC8211(TE12L,Q,M)MOSFET 2N-CH 30V 5.5A 8SOP Toshiba Semiconductor and Storage |
7,727 | - |
|
数据表 |
- | 8-SOIC (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30V | 5.5A | 36mOhm @ 3A, 10V | 2.5V @ 1mA | 25nC @ 10V | Logic Level Gate | 1250pF @ 10V | 450mW | 8-SOP (5.5x6.0) | 150°C (TJ) | Surface Mount | - | - |
|
SSM6N37FE,LMMOSFET 2N-CH 20V 0.25A ES6 Toshiba Semiconductor and Storage |
8,704 | - |
|
数据表 |
- | SOT-563, SOT-666 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 250mA | 2.2Ohm @ 100mA, 4.5V | 1V @ 1mA | - | Logic Level Gate | 12pF @ 10V | 150mW | ES6 | 150°C (TJ) | Surface Mount | - | - |
|
|
TPC8207(TE12L,Q)MOSFET 2N-CH 20V 6A 8SOP Toshiba Semiconductor and Storage |
9,508 | - |
|
数据表 |
- | 8-SOIC (0.173", 4.40mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 6A | 20mOhm @ 4.8A, 4V | 1.2V @ 200µA | 22nC @ 5V | Logic Level Gate | 2010pF @ 10V | 450mW | 8-SOP (5.5x6.0) | 150°C (TJ) | Surface Mount | - | - |
|
SSM6N7002BFU(T5L,FMOSFET 2N-CH 60V 0.2A US6 Toshiba Semiconductor and Storage |
2,982 | - |
|
数据表 |
- | 6-TSSOP, SC-88, SOT-363 | Cut Tape (CT) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 60V | 200mA | 2.1Ohm @ 500mA, 10V | 3.1V @ 250µA | - | Logic Level Gate | 17pF @ 25V | 300mW | US6 | 150°C (TJ) | Surface Mount | - | - |
|
|
SSM6N7002BFU,LFMOSFET 2N-CH 60V 0.2A US6 Toshiba Semiconductor and Storage |
4,456 | - |
|
数据表 |
- | 6-TSSOP, SC-88, SOT-363 | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 60V | 200mA | 2.1Ohm @ 500mA, 10V | 3.1V @ 250µA | - | Logic Level Gate | 17pF @ 25V | 300mW | US6 | 150°C (TJ) | Surface Mount | - | - |
|
|
SSM6L16FETE85LFMOSFET N/P-CH 20V 0.1A ES6 Toshiba Semiconductor and Storage |
29 | - |
|
数据表 |
- | SOT-563, SOT-666 | Tape & Reel (TR) | Not For New Designs | MOSFET (Metal Oxide) | N and P-Channel | 20V | 100mA | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | - | - | 9.3pF @ 3V | 150mW | ES6 | 150°C (TA) | Surface Mount | - | - |
|
|
SSM6N42FE(TE85L,F)MOSFET 2N-CH 20V 0.8A ES6 Toshiba Semiconductor and Storage |
8,984 | - |
|
数据表 |
- | SOT-563, SOT-666 | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 20V | 800mA | 240mOhm @ 500mA, 4.5V | 1V @ 1mA | 2nC @ 4.5V | Logic Level Gate | 90pF @ 10V | 150mW | ES6 | 150°C (TJ) | Surface Mount | - | - |
|
|
SSM6P35FE(TE85L,F)MOSFET 2P-CH 20V 0.1A ES6 Toshiba Semiconductor and Storage |
9,158 | - |
|
数据表 |
- | SOT-563, SOT-666 | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | 20V | 100mA | 8Ohm @ 50mA, 4V | 1V @ 1mA | - | Logic Level Gate | 12.2pF @ 3V | 150mW | ES6 | 150°C (TJ) | Surface Mount | - | - |
