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场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证
IRF8910PBF

IRF8910PBF

MOSFET 2N-CH 20V 10A 8SO

Infineon Technologies

8,775 -
IRF8910PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel (Dual) 20V 10A 13.4mOhm @ 10A, 10V 2.55V @ 250µA 11nC @ 4.5V Logic Level Gate 960pF @ 10V 2W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
IRF9910PBF

IRF9910PBF

MOSFET 2N-CH 20V 10A/12A 8SO

Infineon Technologies

8,525 -
IRF9910PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel (Dual) 20V 10A, 12A 13.4mOhm @ 10A, 10V 2.55V @ 250µA 11nC @ 4.5V Logic Level Gate 900pF @ 10V 2W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
IRF7902PBF

IRF7902PBF

MOSFET 2N-CH 30V 6.4A/9.7A 8SO

Infineon Technologies

3,400 -
IRF7902PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 6.4A, 9.7A 22.6mOhm @ 6.4A, 10V 2.25V @ 25µA 6.9nC @ 4.5V Logic Level Gate 580pF @ 15V 1.4W, 2W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
IRF7904PBF

IRF7904PBF

MOSFET 2N-CH 30V 7.6A/11A 8SO

Infineon Technologies

3,130 -
IRF7904PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 7.6A, 11A 16.2mOhm @ 7.6A, 10V 2.25V @ 25µA 11nC @ 4.5V Logic Level Gate 910pF @ 15V 1.4W, 2W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
IRF7905PBF

IRF7905PBF

MOSFET 2N-CH 30V 7.8A/8.9A 8SO

Infineon Technologies

3,450 -
IRF7905PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 7.8A, 8.9A 21.8mOhm @ 7.8A, 10V 2.25V @ 25µA 6.9nC @ 4.5V Logic Level Gate 600pF @ 15V 2W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
IRF7907PBF

IRF7907PBF

MOSFET 2N-CH 30V 9.1A/11A 8SO

Infineon Technologies

5,861 -
IRF7907PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel (Dual) 30V 9.1A, 11A 16.4mOhm @ 9.1A, 10V 2.35V @ 25µA 10nC @ 4.5V Logic Level Gate 850pF @ 15V 2W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
IRF7507PBF

IRF7507PBF

MOSFET N/P-CH 20V 2.4A MICRO8

Infineon Technologies

7,923 -
IRF7507PBF

数据表

HEXFET® 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) N and P-Channel 20V 2.4A, 1.7A 140mOhm @ 1.7A, 4.5V 700mV @ 250µA (Min) 8nC @ 4.5V Logic Level Gate 260pF @ 15V 1.25W Micro8™ - Surface Mount - -
IRF7379QTRPBF

IRF7379QTRPBF

MOSFET N/P-CH 30V 5.8A/4.3A 8SO

Infineon Technologies

3,477 -
IRF7379QTRPBF

数据表

- 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Obsolete MOSFET (Metal Oxide) N and P-Channel 30V 5.8A, 4.3A 45mOhm @ 5.8A, 10V 1V @ 250µA 25nC @ 10V Logic Level Gate 520pF @ 25V 2.5W 8-SO - Surface Mount - -
IRF7309QTRPBF

IRF7309QTRPBF

MOSFET N/P-CH 30V 4A/3A 8SO

Infineon Technologies

3,397 -
IRF7309QTRPBF

数据表

- 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Obsolete MOSFET (Metal Oxide) N and P-Channel 30V 4A, 3A 50mOhm @ 2.4A, 10V 1V @ 250µA 25nC @ 4.5V - 520pF @ 15V 1.4W 8-SO - Surface Mount - -
IRF7306QTRPBF

IRF7306QTRPBF

MOSFET 2P-CH 30V 3.6A 8SO

Infineon Technologies

4,555 -
IRF7306QTRPBF

数据表

- 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) 30V 3.6A 100mOhm @ 1.8A, 10V 1V @ 250µA 25nC @ 10V - 440pF @ 25V 2W 8-SO - Surface Mount - -
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