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场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证

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全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs FET 特性 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 供应商设备封装 工作温度 安装类型 等级 认证
IRF7301PBF

IRF7301PBF

MOSFET 2N-CH 20V 5.2A 8SO

Infineon Technologies

8,577 -
IRF7301PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel (Dual) 20V 5.2A 50mOhm @ 2.6A, 4.5V 700mV @ 250µA 20nC @ 4.5V Logic Level Gate 660pF @ 15V 2W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
IRF7331PBF

IRF7331PBF

MOSFET 2N-CH 20V 7A 8SO

Infineon Technologies

9,101 -
IRF7331PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel (Dual) 20V 7A 30mOhm @ 7A, 4.5V 1.2V @ 250µA 20nC @ 4.5V Logic Level Gate 1340pF @ 16V 2W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
IRF7379PBF

IRF7379PBF

MOSFET N/P-CH 30V 5.8A/4.3A 8SO

Infineon Technologies

9,775 -
IRF7379PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) N and P-Channel 30V 5.8A, 4.3A 45mOhm @ 5.8A, 10V 1V @ 250µA 25nC @ 10V - 520pF @ 25V 2.5W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
IRF7306PBF

IRF7306PBF

MOSFET 2P-CH 30V 3.6A 8SO

Infineon Technologies

3,575 -
IRF7306PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 P-Channel (Dual) 30V 3.6A 100mOhm @ 1.8A, 10V 1V @ 250µA 25nC @ 10V Logic Level Gate 440pF @ 25V 2W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
IRF7325PBF

IRF7325PBF

MOSFET 2P-CH 12V 7.8A 8SO

Infineon Technologies

2,548 -
IRF7325PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) 12V 7.8A 24mOhm @ 7.8A, 4.5V 900mV @ 250µA 33nC @ 4.5V Logic Level Gate 2020pF @ 10V 2W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
IRF7307PBF

IRF7307PBF

MOSFET N/P-CH 20V 5.2A/4.3A 8SO

Infineon Technologies

8,015 -
IRF7307PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) N and P-Channel 20V 5.2A, 4.3A 50mOhm @ 2.6A, 4.5V 700mV @ 250µA 20nC @ 4.5V Logic Level Gate 660pF @ 15V 2W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
IRF7324PBF

IRF7324PBF

MOSFET 2P-CH 20V 9A 8SO

Infineon Technologies

6,434 -
IRF7324PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 P-Channel (Dual) 20V 9A 18mOhm @ 9A, 4.5V 1V @ 250µA 63nC @ 5V Logic Level Gate 2940pF @ 15V 2W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
IRF7101PBF

IRF7101PBF

MOSFET 2N-CH 20V 3.5A 8SO

Infineon Technologies

6,123 -
IRF7101PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel (Dual) 20V 3.5A 100mOhm @ 1.8A, 10V 3V @ 250µA 15nC @ 10V Logic Level Gate 320pF @ 15V 2W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
IRF9953PBF

IRF9953PBF

MOSFET 2P-CH 30V 2.3A 8SO

Infineon Technologies

9,313 -
IRF9953PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 P-Channel (Dual) 30V 2.3A 250mOhm @ 1A, 10V 1V @ 250µA 12nC @ 10V - 190pF @ 15V 2W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
IRF7309PBF

IRF7309PBF

MOSFET N/P-CH 30V 4A/3A 8SO

Infineon Technologies

2,196 -
IRF7309PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) N and P-Channel 30V 4A, 3A 50mOhm @ 2.4A, 10V 1V @ 250µA 25nC @ 4.5V - 520pF @ 15V 1.4W 8-SO -55°C ~ 150°C (TJ) Surface Mount - -
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