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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
SF802GHC0G

SF802GHC0G

DIODE GEN PURP 100V 8A TO220AB

Taiwan Semiconductor Corporation

7,956 -
SF802GHC0G

数据表

- TO-220-3 Tube Discontinued at Digi-Key Standard 100 V 975 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 100 V 70pF @ 4V, 1MHz 8A Automotive AEC-Q101 Through Hole TO-220AB -55°C ~ 150°C
SF803GHC0G

SF803GHC0G

DIODE GEN PURP 150V 8A TO220AB

Taiwan Semiconductor Corporation

7,812 -
SF803GHC0G

数据表

- TO-220-3 Tube Discontinued at Digi-Key Standard 150 V 975 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 150 V 70pF @ 4V, 1MHz 8A Automotive AEC-Q101 Through Hole TO-220AB -55°C ~ 150°C
S1JLS RVG

S1JLS RVG

DIODE GP 600V 1.2A SOD123HE

Taiwan Semiconductor Corporation

3,361 -
S1JLS RVG

数据表

- SOD-123H Tape & Reel (TR) Active Standard 600 V 1.3 V @ 1.2 A Fast Recovery =< 500ns, > 200mA (Io) - 5 µA @ 600 V - 1.2A - - Surface Mount SOD-123HE -55°C ~ 150°C
S1JM RSG

S1JM RSG

DIODE GEN PURP 600V 1A MICRO SMA

Taiwan Semiconductor Corporation

5,039 -
S1JM RSG

数据表

- 2-SMD, Flat Leads Tape & Reel (TR) Active Standard 600 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 780 ns 1 µA @ 600 V 5pF @ 4V, 1MHz 1A - - Surface Mount Micro SMA -55°C ~ 175°C
SF806G C0G

SF806G C0G

DIODE GEN PURP 400V 8A TO220AB

Taiwan Semiconductor Corporation

5,191 -
SF806G C0G

数据表

- TO-220-3 Tube Active Standard 400 V 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 400 V 50pF @ 4V, 1MHz 8A - - Through Hole TO-220AB -55°C ~ 150°C
SFA1001GHC0G

SFA1001GHC0G

DIODE GEN PURP 50V 10A TO220AC

Taiwan Semiconductor Corporation

8,522 -
SFA1001GHC0G

数据表

- TO-220-2 Tube Discontinued at Digi-Key Standard 50 V 975 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 50 V 70pF @ 4V, 1MHz 10A Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
SFA1002GHC0G

SFA1002GHC0G

DIODE GEN PURP 100V 10A TO220AC

Taiwan Semiconductor Corporation

9,037 -
SFA1002GHC0G

数据表

- TO-220-2 Tube Discontinued at Digi-Key Standard 100 V 975 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 100 V 70pF @ 4V, 1MHz 10A Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
SFA1003GHC0G

SFA1003GHC0G

DIODE GEN PURP 150V 10A TO220AC

Taiwan Semiconductor Corporation

9,619 -
SFA1003GHC0G

数据表

- TO-220-2 Tube Discontinued at Digi-Key Standard 150 V 975 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 150 V 70pF @ 4V, 1MHz 10A Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
BAS40 RFG

BAS40 RFG

DIODE SCHOTTKY 40V 200MA SOT23

Taiwan Semiconductor Corporation

6,799 -
BAS40 RFG

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active Schottky 40 V 1 V @ 40 mA Small Signal =< 200mA (Io), Any Speed 5 ns 200 nA @ 40 V 5pF @ 1V, 1MHz 200mA - - Surface Mount SOT-23 -65°C ~ 125°C
SFA1004G C0G

SFA1004G C0G

DIODE GEN PURP 200V 10A TO220AC

Taiwan Semiconductor Corporation

2,986 -
SFA1004G C0G

数据表

- TO-220-2 Tube Discontinued at Digi-Key Standard 200 V 975 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 70pF @ 4V, 1MHz 10A - - Through Hole TO-220AC -55°C ~ 150°C
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