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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
SF2007GHC0G

SF2007GHC0G

DIODE GEN PURP 500V 20A TO220AB

Taiwan Semiconductor Corporation

4,622 -
SF2007GHC0G

数据表

- TO-220-3 Tube Active Standard 500 V 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 500 V 80pF @ 4V, 1MHz 20A Automotive AEC-Q101 Through Hole TO-220AB -55°C ~ 150°C
SF2007PTHC0G

SF2007PTHC0G

DIODE GEN PURP 500V 20A TO247AD

Taiwan Semiconductor Corporation

5,027 -
SF2007PTHC0G

数据表

- TO-247-3 Tube Discontinued at Digi-Key Standard 500 V 1.9 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 500 V 175pF @ 4V, 1MHz 20A Automotive AEC-Q101 Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
SF2008G

SF2008G

DIODE GEN PURP 600V 20A TO220AB

Taiwan Semiconductor Corporation

9,269 -
SF2008G

数据表

- TO-220-3 Tube Discontinued at Digi-Key Standard 600 V 1.7 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 600 V 80pF @ 4V, 1MHz 20A - - Through Hole TO-220AB -55°C ~ 150°C
SF3001PT C0G

SF3001PT C0G

DIODE GEN PURP 50V 30A TO247AD

Taiwan Semiconductor Corporation

5,266 -
SF3001PT C0G

数据表

- TO-247-3 Tube Active Standard 50 V 950 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 50 V 175pF @ 4V, 1MHz 30A - - Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
SF3002PT C0G

SF3002PT C0G

DIODE GEN PURP 100V 30A TO247AD

Taiwan Semiconductor Corporation

4,520 -
SF3002PT C0G

数据表

- TO-247-3 Tube Active Standard 100 V 950 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 100 V 175pF @ 4V, 1MHz 30A - - Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
SF3003PT C0G

SF3003PT C0G

DIODE GEN PURP 150V 30A TO247AD

Taiwan Semiconductor Corporation

4,806 -
SF3003PT C0G

数据表

- TO-247-3 Tube Active Standard 150 V 950 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 150 V 175pF @ 4V, 1MHz 30A - - Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
SF3003PTHC0G

SF3003PTHC0G

DIODE GEN PURP 150V 30A TO247AD

Taiwan Semiconductor Corporation

8,468 -
SF3003PTHC0G

数据表

- TO-247-3 Tube Active Standard 150 V 950 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 150 V 175pF @ 4V, 1MHz 30A Automotive AEC-Q101 Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
SF3005PT

SF3005PT

DIODE GEN PURP 300V 30A TO247AD

Taiwan Semiconductor Corporation

9,925 -
SF3005PT

数据表

- TO-247-3 Tube Discontinued at Digi-Key Standard 300 V 1.3 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 300 V 175pF @ 4V, 1MHz 30A - - Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
SF3005PTHC0G

SF3005PTHC0G

DIODE GEN PURP 300V 30A TO247AD

Taiwan Semiconductor Corporation

6,219 -
SF3005PTHC0G

数据表

- TO-247-3 Tube Active Standard 300 V 1.3 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 300 V 175pF @ 4V, 1MHz 30A Automotive AEC-Q101 Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
SF3006PTH

SF3006PTH

DIODE GEN PURP 400V 30A TO247AD

Taiwan Semiconductor Corporation

7,323 -
SF3006PTH

数据表

- TO-247-3 Tube Discontinued at Digi-Key Standard 400 V 1.3 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 400 V 175pF @ 4V, 1MHz 30A Automotive AEC-Q101 Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
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