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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
SF1004GHC0G

SF1004GHC0G

DIODE GEN PURP 200V 10A TO220AB

Taiwan Semiconductor Corporation

8,151 -
SF1004GHC0G

数据表

- TO-220-3 Tube Active Standard 200 V 975 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 70pF @ 4V, 1MHz 10A Automotive AEC-Q101 Through Hole TO-220AB -55°C ~ 150°C
SF1005GHC0G

SF1005GHC0G

DIODE GEN PURP 300V 10A TO220AB

Taiwan Semiconductor Corporation

8,502 -
SF1005GHC0G

数据表

- TO-220-3 Tube Active Standard 300 V 1.3 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 300 V 50pF @ 4V, 1MHz 10A Automotive AEC-Q101 Through Hole TO-220AB -55°C ~ 150°C
SF1007GHC0G

SF1007GHC0G

DIODE GEN PURP 500V 10A TO220AB

Taiwan Semiconductor Corporation

8,057 -
SF1007GHC0G

数据表

- TO-220-3 Tube Discontinued at Digi-Key Standard 500 V 1.7 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 500 V 50pF @ 4V, 1MHz 10A Automotive AEC-Q101 Through Hole TO-220AB -55°C ~ 150°C
SF1601G C0G

SF1601G C0G

DIODE GEN PURP 50V 16A TO220AB

Taiwan Semiconductor Corporation

4,779 -
SF1601G C0G

数据表

- TO-220-3 Tube Active Standard 50 V 975 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 50 V 80pF @ 4V, 1MHz 16A - - Through Hole TO-220AB -55°C ~ 150°C
SF1603G C0G

SF1603G C0G

DIODE GEN PURP 150V 16A TO220AB

Taiwan Semiconductor Corporation

5,725 -
SF1603G C0G

数据表

- TO-220-3 Tube Active Standard 150 V 975 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 150 V 80pF @ 4V, 1MHz 16A - - Through Hole TO-220AB -55°C ~ 150°C
SF1603PT C0G

SF1603PT C0G

DIODE GEN PURP 150V 16A TO247AD

Taiwan Semiconductor Corporation

4,287 -
SF1603PT C0G

数据表

- TO-247-3 Tube Active Standard 150 V 950 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 150 V 85pF @ 4V, 1MHz 16A - - Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
SF1604PTHC0G

SF1604PTHC0G

DIODE GEN PURP 200V 16A TO247AD

Taiwan Semiconductor Corporation

2,260 -
SF1604PTHC0G

数据表

- TO-247-3 Tube Active Standard 200 V 950 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 85pF @ 4V, 1MHz 16A Automotive AEC-Q101 Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
SF1608GHC0G

SF1608GHC0G

DIODE GEN PURP 600V 16A TO220AB

Taiwan Semiconductor Corporation

4,440 -
SF1608GHC0G

数据表

- TO-220-3 Tube Active Standard 600 V 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V 60pF @ 4V, 1MHz 16A Automotive AEC-Q101 Through Hole TO-220AB -55°C ~ 150°C
SF1608PT C0G

SF1608PT C0G

DIODE GEN PURP 600V 16A TO247AD

Taiwan Semiconductor Corporation

5,420 -
SF1608PT C0G

数据表

- TO-247-3 Tube Active Standard 600 V 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V 85pF @ 4V, 1MHz 16A - - Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
SF1608PTH

SF1608PTH

DIODE GEN PURP 600V 16A TO247AD

Taiwan Semiconductor Corporation

3,783 -
SF1608PTH

数据表

- TO-247-3 Tube Discontinued at Digi-Key Standard 600 V 1.7 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 600 V 85pF @ 4V, 1MHz 16A Automotive AEC-Q101 Through Hole TO-247AD (TO-3P) -55°C ~ 150°C
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