| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
MUR820 C0GDIODE GEN PURP 200V 8A TO220AC Taiwan Semiconductor Corporation |
6,668 | - |
|
数据表 |
- | TO-220-2 | Tube | Discontinued at Digi-Key | Standard | 200 V | 975 mV @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 5 µA @ 200 V | - | 8A | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
MUR840 C0GDIODE GEN PURP 400V 8A TO220AC Taiwan Semiconductor Corporation |
5,833 | - |
|
数据表 |
- | TO-220-2 | Tube | Discontinued at Digi-Key | Standard | 400 V | 1.3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 400 V | - | 8A | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
MUR860HC0GDIODE GEN PURP 600V 8A TO220AC Taiwan Semiconductor Corporation |
7,161 | - |
|
数据表 |
- | TO-220-2 | Tube | Discontinued at Digi-Key | Standard | 600 V | 1.7 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 600 V | - | 8A | Automotive | AEC-Q101 | Through Hole | TO-220AC | -55°C ~ 175°C |
|
MUR8L60 C0GDIODE GEN PURP 600V 8A TO220AC Taiwan Semiconductor Corporation |
8,306 | - |
|
数据表 |
- | TO-220-2 | Tube | Discontinued at Digi-Key | Standard | 600 V | 1.3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 65 ns | 5 µA @ 600 V | - | 8A | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
|
MUR8L60HC0GDIODE GEN PURP 600V 8A TO220AC Taiwan Semiconductor Corporation |
2,049 | - |
|
数据表 |
- | TO-220-2 | Tube | Discontinued at Digi-Key | Standard | 600 V | 1.3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 65 ns | 5 µA @ 600 V | - | 8A | Automotive | AEC-Q101 | Through Hole | TO-220AC | -55°C ~ 175°C |
|
MURF8L60 C0GDIODE GEN PURP 600V 8A ITO220AC Taiwan Semiconductor Corporation |
7,329 | - |
|
数据表 |
- | TO-220-2 Full Pack | Tube | Discontinued at Digi-Key | Standard | 600 V | 1.3 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 65 ns | 5 µA @ 600 V | - | 8A | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |
|
SF1001GHC0GDIODE GEN PURP 50V 10A TO220AB Taiwan Semiconductor Corporation |
4,496 | - |
|
数据表 |
- | TO-220-3 | Tube | Discontinued at Digi-Key | Standard | 50 V | 975 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 50 V | 70pF @ 4V, 1MHz | 10A | Automotive | AEC-Q101 | Through Hole | TO-220AB | -55°C ~ 150°C |
|
SF1003G C0GDIODE GEN PURP 150V 10A TO220AB Taiwan Semiconductor Corporation |
6,493 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | Standard | 150 V | 975 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 150 V | 70pF @ 4V, 1MHz | 10A | - | - | Through Hole | TO-220AB | -55°C ~ 150°C |
|
SF1003GHC0GDIODE GEN PURP 150V 10A TO220AB Taiwan Semiconductor Corporation |
8,979 | - |
|
数据表 |
- | TO-220-3 | Tube | Discontinued at Digi-Key | Standard | 150 V | 975 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 150 V | 70pF @ 4V, 1MHz | 10A | Automotive | AEC-Q101 | Through Hole | TO-220AB | -55°C ~ 150°C |
|
SF1004GDIODE GEN PURP 200V 10A TO220AB Taiwan Semiconductor Corporation |
7,418 | - |
|
数据表 |
- | TO-220-3 | Tube | Discontinued at Digi-Key | Standard | 200 V | 975 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 200 V | 70pF @ 4V, 1MHz | 10A | - | - | Through Hole | TO-220AB | -55°C ~ 150°C |