Taiwan Semiconductor Corporation|单个二极管 - 页 292

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
SF2001PTHC0G DIODE GEN PURP 50V 20A TO247AD Taiwan Semiconductor Corporation	8,654	-	询价单	数据表	-	TO-247-3	Tube	Discontinued at Digi-Key	Standard	50 V	1.1 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 50 V	175pF @ 4V, 1MHz	20A	Automotive	AEC-Q101	Through Hole	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2002G C0G DIODE GEN PURP 100V 20A TO220AB Taiwan Semiconductor Corporation	5,924	-	询价单	数据表	-	TO-220-3	Tube	Active	Standard	100 V	975 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 100 V	80pF @ 4V, 1MHz	20A	-	-	Through Hole	TO-220AB	-55°C ~ 150°C
SF2002PT C0G DIODE GEN PURP 100V 20A TO247AD Taiwan Semiconductor Corporation	9,655	-	询价单	数据表	-	TO-247-3	Tube	Active	Standard	100 V	1.1 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 100 V	175pF @ 4V, 1MHz	20A	-	-	Through Hole	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2002PTHC0G DIODE GEN PURP 100V 20A TO247AD Taiwan Semiconductor Corporation	4,505	-	询价单	数据表	-	TO-247-3	Tube	Discontinued at Digi-Key	Standard	100 V	1.1 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 100 V	175pF @ 4V, 1MHz	20A	Automotive	AEC-Q101	Through Hole	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2003G C0G DIODE GEN PURP 150V 20A TO220AB Taiwan Semiconductor Corporation	7,560	-	询价单	数据表	-	TO-220-3	Tube	Active	Standard	150 V	975 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 150 V	80pF @ 4V, 1MHz	20A	-	-	Through Hole	TO-220AB	-55°C ~ 150°C
SF2003PTHC0G DIODE GEN PURP 150V 20A TO247AD Taiwan Semiconductor Corporation	6,287	-	询价单	数据表	-	TO-247-3	Tube	Discontinued at Digi-Key	Standard	150 V	1.1 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 150 V	175pF @ 4V, 1MHz	20A	Automotive	AEC-Q101	Through Hole	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2004GHC0G DIODE GEN PURP 200V 20A TO220AB Taiwan Semiconductor Corporation	6,754	-	询价单	数据表	-	TO-220-3	Tube	Active	Standard	200 V	975 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 200 V	80pF @ 4V, 1MHz	20A	Automotive	AEC-Q101	Through Hole	TO-220AB	-55°C ~ 150°C
SF2005GHC0G DIODE GEN PURP 300V 20A TO220AB Taiwan Semiconductor Corporation	4,909	-	询价单	数据表	-	TO-220-3	Tube	Active	Standard	300 V	1.3 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 300 V	80pF @ 4V, 1MHz	20A	Automotive	AEC-Q101	Through Hole	TO-220AB	-55°C ~ 150°C
SF2006GHC0G DIODE GEN PURP 400V 20A TO220AB Taiwan Semiconductor Corporation	2,284	-	询价单	数据表	-	TO-220-3	Tube	Active	Standard	400 V	1.3 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 400 V	80pF @ 4V, 1MHz	20A	Automotive	AEC-Q101	Through Hole	TO-220AB	-55°C ~ 150°C
SF2007G C0G DIODE GEN PURP 500V 20A TO220AB Taiwan Semiconductor Corporation	2,695	-	询价单	数据表	-	TO-220-3	Tube	Active	Standard	500 V	1.7 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 500 V	80pF @ 4V, 1MHz	20A	-	-	Through Hole	TO-220AB	-55°C ~ 150°C

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