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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SR102 A0GDIODE SCHOTTKY 20V 1A DO204AL Taiwan Semiconductor Corporation |
2,135 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Tape & Box (TB) | Active | Schottky | 20 V | 550 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 20 V | - | 1A | - | - | Through Hole | DO-204AL (DO-41) | -55°C ~ 125°C |
|
|
UF1AHA0GDIODE GEN PURP 50V 1A DO204AL Taiwan Semiconductor Corporation |
9,124 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Tape & Box (TB) | Active | Standard | 50 V | 1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 50 V | 17pF @ 4V, 1MHz | 1A | Automotive | AEC-Q101 | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
|
UF4004 A0GDIODE GEN PURP 400V 1A DO204AL Taiwan Semiconductor Corporation |
5,216 | - |
|
数据表 |
- | DO-204AL, DO-41, Axial | Tape & Box (TB) | Active | Standard | 400 V | 1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 400 V | 17pF @ 4V, 1MHz | 1A | - | - | Through Hole | DO-204AL (DO-41) | -55°C ~ 150°C |
|
1T5G A1GDIODE GEN PURP 600V 1A TS-1 Taiwan Semiconductor Corporation |
4,706 | - |
|
数据表 |
- | T-18, Axial | Tape & Box (TB) | Discontinued at Digi-Key | Standard | 600 V | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 600 V | 10pF @ 4V, 1MHz | 1A | - | - | Through Hole | TS-1 | -55°C ~ 150°C |
|
|
1T7G A1GDIODE GEN PURP 1A TS-1 Taiwan Semiconductor Corporation |
5,884 | - |
|
数据表 |
- | T-18, Axial | Tape & Box (TB) | Discontinued at Digi-Key | Standard | 1000 V | 1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 1000 V | 10pF @ 4V, 1MHz | 1A | - | - | Through Hole | TS-1 | -55°C ~ 150°C |
|
|
F1T4G A1GDIODE GEN PURP 400V 1A TS-1 Taiwan Semiconductor Corporation |
5,304 | - |
|
数据表 |
- | T-18, Axial | Tape & Box (TB) | Discontinued at Digi-Key | Standard | 400 V | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 400 V | 15pF @ 4V, 1MHz | 1A | - | - | Through Hole | TS-1 | -55°C ~ 150°C |
|
|
F1T5G A1GDIODE GEN PURP 600V 1A TS-1 Taiwan Semiconductor Corporation |
6,867 | - |
|
数据表 |
- | T-18, Axial | Tape & Box (TB) | Active | Standard | 600 V | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 5 µA @ 600 V | 15pF @ 4V, 1MHz | 1A | - | - | Through Hole | TS-1 | -55°C ~ 150°C |
|
|
F1T6G A1GDIODE GEN PURP 800V 1A TS-1 Taiwan Semiconductor Corporation |
8,423 | - |
|
数据表 |
- | T-18, Axial | Tape & Box (TB) | Active | Standard | 800 V | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 800 V | 15pF @ 4V, 1MHz | 1A | - | - | Through Hole | TS-1 | -55°C ~ 150°C |
|
|
F1T7G A1GDIODE GEN PURP 1A TS-1 Taiwan Semiconductor Corporation |
3,516 | - |
|
数据表 |
- | T-18, Axial | Tape & Box (TB) | Active | Standard | 1000 V | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 1000 V | 15pF @ 4V, 1MHz | 1A | - | - | Through Hole | TS-1 | -55°C ~ 150°C |
|
|
HT11G A1GDIODE GEN PURP 50V 1A TS-1 Taiwan Semiconductor Corporation |
6,310 | - |
|
数据表 |
- | T-18, Axial | Tape & Box (TB) | Discontinued at Digi-Key | Standard | 50 V | 1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 50 V | 15pF @ 4V, 1MHz | 1A | - | - | Through Hole | TS-1 | -55°C ~ 150°C |
