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制造商	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
Adafruit Industries LLC Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED Bourns Inc. Broadcom Limited Bruckewell Central Semiconductor Corp CODIXX AG Comchip Technology Diodes Incorporated Diotec Semiconductor DNmicron EIC SEMICONDUCTOR INC. EVVO Fairchild Semiconductor fastSiC Flip Electronics Formosa Microsemi Co., Ltd. GeneSiC Semiconductor Global Power Technology-GPT Good-Ark Semiconductor Harris Corporation Honeywell Sensing and Productivity Solutions HV Components Associates HY Electronic (Cayman) Limited Infineon Technologies Inventchip IXYS JATTA KYOCERA AVX Linear Integrated Systems, Inc. Littelfuse Inc. Lumimax Optoelectronic Technology Luminus Devices Inc. MACOM Technology Solutions MDD Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NovuSem NTE Electronics, Inc NXP Semiconductors onsemi Panasonic - BSG Panasonic Electronic Components - Semiconductor Products Panjit International Inc. Phoenix Contact PN Junction Semiconductor Power Integrations Powerex Inc. Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. SanRex Corporation Sanyo Semikron SemiQ Semtech Corporation Sensata-Crydom Shenzhen Slkormicro Semicon Co., Ltd. SMC Diode Solutions Souriau-Sunbank by Eaton SparkFun Electronics STMicroelectronics SURGE Taiwan Semiconductor Corporation TE Connectivity Aerospace, Defense and Marine Torex Semiconductor Ltd Toshiba Semiconductor and Storage Varo Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Semiconductor Opto Division Vishay Siliconix WeEn Semiconductors Wolfspeed, Inc. YAGEO

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
VS-90APS16L-M3 DIODE GEN PURP 1.6KV 90A TO247AD Vishay General Semiconductor - Diodes Division	492	-	询价单	数据表	-	TO-247-3	Tube	Active	Standard	1600 V	1.21 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1600 V	-	90A	-	-	Through Hole	TO-247AD	-40°C ~ 150°C
FFSP1665A DIODE SIL CARB 650V 16A TO220-2 onsemi	1,882	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.75 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	887pF @ 1V, 100kHz	16A	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
STPSC12065G2Y-TR DIODE SIL CARB 650V 12A D2PAK HV STMicroelectronics	859	-	询价单	数据表	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.45 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	150 µA @ 650 V	750pF @ 0V, 1MHz	12A	Automotive	AEC-Q101	Surface Mount	D2PAK HV	-40°C ~ 175°C
C3D10065A DIODE SIL CARB 650V 30A TO220-2 Wolfspeed, Inc.	938	-	询价单	数据表	Z-Rec®	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	480pF @ 0V, 1MHz	30A	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
FFSM1065A DIODE SIL CARBIDE 650V 11A 4PQFN onsemi	2,995	-	询价单	数据表	-	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	575pF @ 1V, 100kHz	11A	-	-	Surface Mount	4-PQFN (8x8)	-55°C ~ 175°C
STPSC12H065D DIODE SIL CARB 650V 12A TO220AC STMicroelectronics	966	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.75 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	-	120 µA @ 650 V	600pF @ 0V, 1MHz	12A	-	-	Through Hole	TO-220AC	-40°C ~ 175°C
FFSH1265BDN-F085 DIODE SIL CARB 650V 7.2A TO247-3 onsemi	756	-	询价单	数据表	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	259pF @ 1V, 100kHz	7.2A	Automotive	AEC-Q101	Through Hole	TO-247-3	-55°C ~ 175°C
SCS308AJTLL DIODE SIL CARBIDE 650V 8A LPTL Rohm Semiconductor	915	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	400pF @ 1V, 1MHz	8A	-	-	Surface Mount	LPTL	175°C (Max)
SIC0860PL8-TP DIODE SIL CARB 650V 8A DFN8080A Micro Commercial Co	6,000	-	询价单	数据表	-	4-PowerVSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.6 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	36 µA @ 650 V	346pF @ 0V, 1MHz	8A	-	-	Surface Mount	DFN8080A	-55°C ~ 175°C
VS-3C16ET07T-M3 650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division	3,020	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.5 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	85 µA @ 650 V	700pF @ 1V, 1MHz	16A	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
VS-EPH3006-N3 DIODE GP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division	422	-	询价单	数据表	FRED Pt®	TO-247-2	Tube	Active	Standard	600 V	2.65 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	26 ns	30 µA @ 600 V	-	30A	-	-	Through Hole	TO-247AC Modified	-65°C ~ 175°C
VS-APU3006-N3 DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division	440	-	询价单	数据表	FRED Pt®	TO-247-3	Tube	Active	Standard	600 V	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	30 µA @ 600 V	-	30A	-	-	Through Hole	TO-247AC	-65°C ~ 175°C
SICB1060P-TP DIODE SIL CARBIDE 650V 10A D2PAK Micro Commercial Co	780	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.6 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	44 µA @ 650 V	36pF @ 400V, 1MHz	10A	-	-	Surface Mount	D2PAK	-55°C ~ 175°C
S3D30065A DIODE SIL CARB 650V 84A TO220AC SMC Diode Solutions	996	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	140 µA @ 650 V	2307pF @ 0V, 100MHz	84A	Automotive	AEC-Q101	Through Hole	TO-220AC	-55°C ~ 175°C
VS-E5PX7512L-N3 DIODE GEN PURP 1.2KV 75A TO247AD Vishay General Semiconductor - Diodes Division	500	-	询价单	数据表	FRED Pt® Gen 5	TO-247-2	Tube	Active	Standard	1200 V	3.3 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	140 ns	50 µA @ 1200 V	-	75A	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
S4D10120A DIODE SIL CARB 1.2KV 10A TO220AC SMC Diode Solutions	260	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	772pF @ 0V, 1MHz	10A	-	-	Through Hole	TO-220AC (TO-220-2)	-55°C ~ 175°C
VS-3C10ET07S2L-M3 650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division	2,345	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	55 µA @ 650 V	445pF @ 1V, 1MHz	10A	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
FFSP08120A DIODE SIL CARB 1.2KV 8A TO220-2L onsemi	365	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.75 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 1200 V	538pF @ 1V, 100kHz	8A	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
GP3D030A065B DIODE SIL CARB 650V 30A TO247-2 SemiQ	142	-	询价单	数据表	Amp+™	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.65 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	75 µA @ 650 V	1247pF @ 1V, 1MHz	30A	-	-	Through Hole	TO-247-2	-55°C ~ 175°C
UJ3D06530TS DIODE SIL CARB 650V 30A TO220-2 Qorvo	7,715	-	询价单	数据表	Gen-III	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	370 µA @ 650 V	990pF @ 1V, 1MHz	30A	-	-	Through Hole	TO-220-2	-55°C ~ 175°C

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