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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
FFSP1065A

FFSP1065A

DIODE SIL CARB 650V 15A TO220-2L

onsemi

1,506 -
FFSP1065A

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.75 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 575pF @ 1V, 100kHz 15A - - Through Hole TO-220-2L -55°C ~ 175°C
IDDD10G65C6XTMA1

IDDD10G65C6XTMA1

DIODE SIL CARB 650V 29A HDSOP-10

Infineon Technologies

1,323 -
IDDD10G65C6XTMA1

数据表

CoolSiC™+ 10-PowerSOP Module Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V - No Recovery Time > 500mA (Io) 0 ns 33 µA @ 420 V 495pF @ 1V, 1MHz 29A - - Surface Mount PG-HDSOP-10-1 -55°C ~ 175°C
STPSC12065GY-TR

STPSC12065GY-TR

DIODE SIL CARBIDE 650V 12A D2PAK

STMicroelectronics

770 -
STPSC12065GY-TR

数据表

ECOPACK®2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.45 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 750pF @ 0V, 1MHz 12A Automotive AEC-Q101 Surface Mount D2PAK -40°C ~ 175°C
SICF0860P-BP

SICF0860P-BP

DIODE SIL CARB 650V 8A ITO220AC

Micro Commercial Co

4,940 -
SICF0860P-BP

数据表

- TO-220-2 Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 650 V 1.6 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 36 µA @ 650 V 30pF @ 400V, 1MHz 8A - - Through Hole ITO-220AC -55°C ~ 175°C
STTH60RQ06WL

STTH60RQ06WL

DIODE GEN PURP 600V 60A DO247 LL

STMicroelectronics

475 -
STTH60RQ06WL

数据表

- TO-247-2 Tube Active Standard 600 V 2.95 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 65 ns 80 µA @ 600 V - 60A - - Through Hole DO-247 LL 175°C (Max)
SICF1060P-BP

SICF1060P-BP

DIODE SIL CARB 650V 10A ITO220AC

Micro Commercial Co

4,983 -
SICF1060P-BP

数据表

- TO-220-2 Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 650 V 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 44 µA @ 650 V 452pF @ 0V, 1MHz 10A - - Through Hole ITO-220AC -55°C ~ 175°C
CMSD4448 BK PBFREE

CMSD4448 BK PBFREE

DIODE GEN PURP 75V 250MA SOT323

Central Semiconductor Corp

7,532 -
CMSD4448 BK PBFREE

数据表

- SC-70, SOT-323 Bulk Active Standard 75 V 1 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 25 nA @ 20 V - 250mA - - Surface Mount SOT-323 -65°C ~ 175°C
FFSB0865A

FFSB0865A

DIODE SIC 650V 15.4A D2PAK-3

onsemi

800 -
FFSB0865A

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.75 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 463pF @ 1V, 100kHz 15.4A - - Surface Mount TO-263 (D2PAK) -55°C ~ 175°C
SDM10P45-7

SDM10P45-7

DIODE SCHOTTKY 45V 100MA SOT523

Diodes Incorporated

7,020 -
SDM10P45-7

数据表

- SOT-523 Tape & Reel (TR) Discontinued at Digi-Key Schottky 45 V 600 mV @ 50 mA Small Signal =< 200mA (Io), Any Speed - 1 µA @ 10 V 6pF @ 10V, 1MHz 100mA - - Surface Mount SOT-523 -40°C ~ 125°C
1N5822-E3/51

1N5822-E3/51

DIODE SCHOTTKY 40V 3A DO201AD

Vishay General Semiconductor - Diodes Division

2,505 -
1N5822-E3/51

数据表

- DO-201AD, Axial Bulk Obsolete Schottky 40 V 525 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 2 mA @ 40 V - 3A - - Through Hole DO-201AD -65°C ~ 125°C
UJ3D1210K2

UJ3D1210K2

DIODE SIL CARB 1.2KV 10A TO247-2

Qorvo

7,101 -
UJ3D1210K2

数据表

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 110 µA @ 1200 V 510pF @ 1V, 1MHz 10A - - Through Hole TO-247-2 -55°C ~ 175°C
RM 11CV

RM 11CV

DIODE GEN PURP 1KV 1.2A AXIAL

Sanken Electric USA Inc.

5,464 -
RM 11CV

数据表

- Axial Tape & Reel (TR) Obsolete Standard 1000 V 920 mV @ 1.5 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1000 V - 1.2A - - Through Hole Axial -40°C ~ 150°C
ACDBCT320-HF

ACDBCT320-HF

DIODE SCHOTTKY 20V 3A 3220

Comchip Technology

9,805 -
ACDBCT320-HF

数据表

- 2-SMD, No Lead Tape & Reel (TR) Last Time Buy Schottky 20 V 370 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 20 V 120pF @ 4V, 1MHz 3A Automotive AEC-Q101 Surface Mount 3220/DO-214AB -55°C ~ 125°C
1N4247

1N4247

DIODE GEN PURP 600V 1A AXIAL

Microchip Technology

338 -
1N4247

数据表

- A, Axial Bulk Active Standard 600 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 600 V - 1A - - Through Hole A, Axial -65°C ~ 175°C
SS3H10HE3/57T

SS3H10HE3/57T

DIODE SCHOTTKY 100V 3A DO214AB

Vishay General Semiconductor - Diodes Division

6,634 -
SS3H10HE3/57T

数据表

- DO-214AB, SMC Tape & Reel (TR) Obsolete Schottky 100 V 800 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 20 µA @ 100 V - 3A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -65°C ~ 175°C
RFV30TG6SGC9

RFV30TG6SGC9

DIODE GP 600V 30A TO220ACFP

Rohm Semiconductor

822 -
RFV30TG6SGC9

数据表

- TO-220-2 Tube Active Standard 600 V 2.8 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 10 µA @ 600 V - 30A - - Through Hole TO-220ACFP 150°C
MUR60120B-BP

MUR60120B-BP

DIODE GEN PURP 1.2KV 60A TO247AD

Micro Commercial Co

986 -
MUR60120B-BP

数据表

- TO-247-2 Tube Active Standard 1200 V 3.3 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 85 ns 15 µA @ 1200 V - 60A - - Through Hole TO-247AD -55°C ~ 175°C
VS-E5PX6012LHN3

VS-E5PX6012LHN3

DIODE GEN PURP 1.2KV 60A TO247AD

Vishay General Semiconductor - Diodes Division

277 -
VS-E5PX6012LHN3

数据表

- TO-247-2 Tube Active Standard 1200 V 3.3 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 120 ns 50 µA @ 1200 V - 60A Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
C3D12065A

C3D12065A

DIODE SIL CARB 650V 35A TO220-2

Wolfspeed, Inc.

1,747 -
C3D12065A

数据表

Z-Rec® TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.8 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 74 µA @ 650 V 641.5pF @ 0V, 1MHz 35A - - Through Hole TO-220-2 -55°C ~ 175°C
IDW10G65C5XKSA1

IDW10G65C5XKSA1

DIODE SIL CARB 650V 10A TO247-3

Infineon Technologies

232 -
IDW10G65C5XKSA1

数据表

CoolSiC™+ TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 180 µA @ 650 V 300pF @ 1V, 1MHz 10A - - Through Hole PG-TO247-3 -55°C ~ 175°C
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