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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
SS3H9HE3/57T

SS3H9HE3/57T

DIODE SCHOTTKY 90V 3A DO214AB

Vishay General Semiconductor - Diodes Division

9,757 -
SS3H9HE3/57T

数据表

- DO-214AB, SMC Tape & Reel (TR) Obsolete Schottky 90 V 800 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 20 µA @ 90 V - 3A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -65°C ~ 175°C
SGL41-20-E3/97

SGL41-20-E3/97

DIODE SCHOTTKY 20V 1A GL41

Vishay General Semiconductor - Diodes Division

2,882 -
SGL41-20-E3/97

数据表

- DO-213AB, MELF Tape & Reel (TR) Active Schottky 20 V 500 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 20 V 110pF @ 4V, 1MHz 1A - - Surface Mount DO-213AB (GL41) -55°C ~ 125°C
IDD08SG60CXTMA2

IDD08SG60CXTMA2

DIODE SIL CARB 600V 8A TO252-3

Infineon Technologies

178 -
IDD08SG60CXTMA2

数据表

CoolSiC™+ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 600 V 2.1 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 70 µA @ 600 V 240pF @ 1V, 1MHz 8A - - Surface Mount PG-TO252-3 -55°C ~ 175°C
SGL41-30-E3/97

SGL41-30-E3/97

DIODE SCHOTTKY 30V 1A GL41

Vishay General Semiconductor - Diodes Division

7,141 -
SGL41-30-E3/97

数据表

- DO-213AB, MELF Tape & Reel (TR) Active Schottky 30 V 500 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 30 V 110pF @ 4V, 1MHz 1A - - Surface Mount DO-213AB (GL41) -55°C ~ 125°C
V12PM45-M3/I

V12PM45-M3/I

DIODE SCHOTTKY 45V 12A TO277A

Vishay General Semiconductor - Diodes Division

9,058 -
V12PM45-M3/I

数据表

eSMP®, TMBS® TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 45 V 600 mV @ 12 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 45 V 2350pF @ 4V, 1MHz 12A - - Surface Mount TO-277A (SMPC) -40°C ~ 175°C
VS-3C08ET07S2L-M3

VS-3C08ET07S2L-M3

650 V POWER SIC GEN 3 MERGED PIN

Vishay General Semiconductor - Diodes Division

2,373 -
VS-3C08ET07S2L-M3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.5 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 45 µA @ 650 V 340pF @ 1V, 1MHz 8A - - Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
AS4PK-M3/86A

AS4PK-M3/86A

DIODE AVALANCHE 800V 2.4A TO277A

Vishay General Semiconductor - Diodes Division

5,868 -
AS4PK-M3/86A

数据表

eSMP® TO-277, 3-PowerDFN Tape & Reel (TR) Active Avalanche 800 V 962 mV @ 2 A Standard Recovery >500ns, > 200mA (Io) 1.8 µs 10 µA @ 800 V 60pF @ 4V, 1MHz 2.4A - - Surface Mount TO-277A (SMPC) -55°C ~ 175°C
VBT760-E3/8W

VBT760-E3/8W

DIODE SCHOTTKY 60V 7.5A TO263AB

Vishay General Semiconductor - Diodes Division

8,168 -
VBT760-E3/8W

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 60 V 800 mV @ 7.5 A Fast Recovery =< 500ns, > 200mA (Io) - 700 µA @ 60 V - 7.5A - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
VBT760-E3/4W

VBT760-E3/4W

DIODE SCHOTTKY 60V 7.5A TO263AB

Vishay General Semiconductor - Diodes Division

5,237 -
VBT760-E3/4W

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Schottky 60 V 800 mV @ 7.5 A Fast Recovery =< 500ns, > 200mA (Io) - 700 µA @ 60 V - 7.5A - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
ES3AHE3/9AT

ES3AHE3/9AT

DIODE GEN PURP 50V 3A DO214AB

Vishay General Semiconductor - Diodes Division

7,679 -
ES3AHE3/9AT

数据表

- DO-214AB, SMC Tape & Reel (TR) Obsolete Standard 50 V 900 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 50 V 45pF @ 4V, 1MHz 3A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -55°C ~ 150°C
HS3M R7G

HS3M R7G

DIODE GEN PURP 1KV 3A DO214AB

Taiwan Semiconductor Corporation

2,312 -
HS3M R7G

数据表

- DO-214AB, SMC Tape & Reel (TR) Discontinued at Digi-Key Standard 1000 V 1.7 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 1000 V 50pF @ 4V, 1MHz 3A - - Surface Mount DO-214AB (SMC) -55°C ~ 150°C
HS5B R7G

HS5B R7G

DIODE GEN PURP 100V 5A DO214AB

Taiwan Semiconductor Corporation

5,244 -
HS5B R7G

数据表

- DO-214AB, SMC Tape & Reel (TR) Discontinued at Digi-Key Standard 100 V 1 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 100 V 80pF @ 4V, 1MHz 5A - - Surface Mount DO-214AB (SMC) -55°C ~ 150°C
HS5D R7G

HS5D R7G

DIODE GEN PURP 200V 5A DO214AB

Taiwan Semiconductor Corporation

9,285 -
HS5D R7G

数据表

- DO-214AB, SMC Tape & Reel (TR) Discontinued at Digi-Key Standard 200 V 1 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 200 V 80pF @ 4V, 1MHz 5A - - Surface Mount DO-214AB (SMC) -55°C ~ 150°C
HS5F R7G

HS5F R7G

DIODE GEN PURP 300V 5A DO214AB

Taiwan Semiconductor Corporation

4,691 -
HS5F R7G

数据表

- DO-214AB, SMC Tape & Reel (TR) Discontinued at Digi-Key Standard 300 V 1 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 300 V 80pF @ 4V, 1MHz 5A - - Surface Mount DO-214AB (SMC) -55°C ~ 150°C
HS5G R7G

HS5G R7G

DIODE GEN PURP 400V 5A DO214AB

Taiwan Semiconductor Corporation

9,600 -
HS5G R7G

数据表

- DO-214AB, SMC Tape & Reel (TR) Discontinued at Digi-Key Standard 400 V 1.3 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 400 V 80pF @ 4V, 1MHz 5A - - Surface Mount DO-214AB (SMC) -55°C ~ 150°C
HS5K R7G

HS5K R7G

DIODE GEN PURP 800V 5A DO214AB

Taiwan Semiconductor Corporation

7,931 -
HS5K R7G

数据表

- DO-214AB, SMC Tape & Reel (TR) Discontinued at Digi-Key Standard 800 V 1.7 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 800 V 50pF @ 4V, 1MHz 5A - - Surface Mount DO-214AB (SMC) -55°C ~ 150°C
HS5M R7G

HS5M R7G

DIODE GEN PURP 1KV 5A DO214AB

Taiwan Semiconductor Corporation

8,853 -
HS5M R7G

数据表

- DO-214AB, SMC Tape & Reel (TR) Discontinued at Digi-Key Standard 1000 V 1.7 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 1000 V 50pF @ 4V, 1MHz 5A - - Surface Mount DO-214AB (SMC) -55°C ~ 150°C
MBRF10200 C0G

MBRF10200 C0G

DIODE SCHOTTKY 200V 10A ITO220AC

Taiwan Semiconductor Corporation

2,472 -
MBRF10200 C0G

数据表

- TO-220-2 Full Pack Tube Discontinued at Digi-Key Schottky 200 V 1.05 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 200 V - 10A - - Through Hole ITO-220AC -55°C ~ 150°C
MUR120S R5G

MUR120S R5G

DIODE GEN PURP 200V 1A DO214AA

Taiwan Semiconductor Corporation

7,800 -
MUR120S R5G

数据表

- DO-214AA, SMB Tape & Reel (TR) Discontinued at Digi-Key Standard 200 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 2 µA @ 200 V - 1A - - Surface Mount DO-214AA (SMB) -55°C ~ 175°C
MUR320S R7G

MUR320S R7G

DIODE GEN PURP 200V 3A DO214AB

Taiwan Semiconductor Corporation

5,587 -
MUR320S R7G

数据表

- DO-214AB, SMC Tape & Reel (TR) Discontinued at Digi-Key Standard 200 V 875 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 5 µA @ 200 V - 3A - - Surface Mount DO-214AB (SMC) -55°C ~ 175°C
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