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制造商	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
Adafruit Industries LLC Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED Bourns Inc. Broadcom Limited Bruckewell Central Semiconductor Corp CODIXX AG Comchip Technology Diodes Incorporated Diotec Semiconductor DNmicron EIC SEMICONDUCTOR INC. EVVO Fairchild Semiconductor fastSiC Flip Electronics Formosa Microsemi Co., Ltd. GeneSiC Semiconductor Global Power Technology-GPT Good-Ark Semiconductor Harris Corporation Honeywell Sensing and Productivity Solutions HV Components Associates HY Electronic (Cayman) Limited Infineon Technologies Inventchip IXYS JATTA KYOCERA AVX Linear Integrated Systems, Inc. Littelfuse Inc. Lumimax Optoelectronic Technology Luminus Devices Inc. MACOM Technology Solutions MDD Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NovuSem NTE Electronics, Inc NXP Semiconductors onsemi Panasonic - BSG Panasonic Electronic Components - Semiconductor Products Panjit International Inc. Phoenix Contact PN Junction Semiconductor Power Integrations Powerex Inc. Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. SanRex Corporation Sanyo Semikron SemiQ Semtech Corporation Sensata-Crydom Shenzhen Slkormicro Semicon Co., Ltd. SMC Diode Solutions Souriau-Sunbank by Eaton SparkFun Electronics STMicroelectronics SURGE Taiwan Semiconductor Corporation TE Connectivity Aerospace, Defense and Marine Torex Semiconductor Ltd Toshiba Semiconductor and Storage Varo Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Semiconductor Opto Division Vishay Siliconix WeEn Semiconductors Wolfspeed, Inc. YAGEO

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
AIDK08S65C5ATMA1 DISCRETE DIODES Infineon Technologies	188	-	询价单	数据表	CoolSiC™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	248pF @ 1V, 1MHz	8A	Automotive	AEC-Q101	Surface Mount	PG-TO263-2	-40°C ~ 175°C
S1JHE3/5AT DIODE GEN PURP 600V 1A DO214AC Vishay General Semiconductor - Diodes Division	2,863	-	询价单	数据表	-	DO-214AC, SMA	Tape & Reel (TR)	Obsolete	Standard	600 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.8 µs	1 µA @ 600 V	12pF @ 4V, 1MHz	1A	-	-	Surface Mount	DO-214AC (SMA)	-55°C ~ 150°C
SCS206AJHRTLL DIODE SIL CARB 650V 6A TO263AB Rohm Semiconductor	2,756	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.55 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 600 V	219pF @ 1V, 1MHz	6A	Automotive	AEC-Q101	Surface Mount	TO-263AB	175°C (Max)
S1GHE3/61T DIODE GEN PURP 400V 1A DO214AC Vishay General Semiconductor - Diodes Division	4,624	-	询价单	数据表	-	DO-214AC, SMA	Tape & Reel (TR)	Obsolete	Standard	400 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.8 µs	1 µA @ 400 V	12pF @ 4V, 1MHz	1A	-	-	Surface Mount	DO-214AC (SMA)	-55°C ~ 150°C
S3D20065A DIODE SIL CARB 650V 20A TO220AC SMC Diode Solutions	289	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	1200pF @ 0V, 1MHz	20A	-	-	Through Hole	TO-220AC (TO-220-2)	-55°C ~ 175°C
SCS310AJTLL DIODE SIL CARBIDE 650V 10A LPTL Rohm Semiconductor	518	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	10A	-	-	Surface Mount	LPTL	175°C (Max)
APT15DQ120BHBG DIODE GEN PURP 1.2KV 15A TO247-3 Microchip Technology	101	-	询价单	数据表	-	TO-247-3	Tube	Active	Standard	1200 V	3.5 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	240 ns	100 µA @ 1200 V	-	15A	-	-	Through Hole	TO-247-3	-55°C ~ 175°C
VS-40EPF06-M3 DIODE GP 600V 40A TO247AC Vishay General Semiconductor - Diodes Division	478	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	600 V	1.25 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	100 µA @ 600 V	-	40A	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
STTH6010WY DIODE GEN PURP 1KV 60A DO247 STMicroelectronics	548	-	询价单	数据表	Q	DO-247-2 (Straight Leads)	Tube	Active	Standard	1000 V	2 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	115 ns	20 µA @ 1000 V	-	60A	Automotive	-	Through Hole	DO-247	-40°C ~ 175°C
C3D08065A DIODE SIL CARB 650V 24A TO220-2 Wolfspeed, Inc.	718	-	询价单	数据表	Z-Rec®	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	441pF @ 0V, 1MHz	24A	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
S1JHE3/61T DIODE GEN PURP 600V 1A DO214AC Vishay General Semiconductor - Diodes Division	4,531	-	询价单	数据表	-	DO-214AC, SMA	Tape & Reel (TR)	Obsolete	Standard	600 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.8 µs	1 µA @ 600 V	12pF @ 4V, 1MHz	1A	-	-	Surface Mount	DO-214AC (SMA)	-55°C ~ 150°C
FFSP2065BDN-F085 DIODE SIL CARB 650V 10A TO220-3 onsemi	180	-	询价单	数据表	-	TO-220-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	421pF @ 1V, 100kHz	10A	Automotive	AEC-Q101	Through Hole	TO-220-3	-55°C ~ 175°C
LSIC2SD065D10A DIODE SIL CARBIDE 650V 27A TO263 Littelfuse Inc.	499	-	询价单	数据表	GEN2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	470pF @ 1V, 1MHz	27A	Automotive	AEC-Q101	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C
S3D20065H DIODE SIL CARB 650V 20A TO247AC SMC Diode Solutions	420	-	询价单	数据表	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 650 V	1200pF @ 0V, 1MHz	20A	-	-	Through Hole	TO-247AC	-55°C ~ 175°C
AIDK12S65C5ATMA1 DISCRETE DIODES Infineon Technologies	757	-	询价单	数据表	CoolSiC™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	70 µA @ 650 V	363pF @ 1V, 1MHz	12A	Automotive	AEC-Q101	Surface Mount	PG-TO263-2	-40°C ~ 175°C
DUR6060W DIODE GEN PURP 600V 60A TO247AC Littelfuse Inc.	193	-	询价单	数据表	DUR	TO-247-2	Tube	Active	Standard	600 V	2 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 µA @ 600 V	-	60A	-	-	Through Hole	TO-247AC	-55°C ~ 150°C
STPSC15H12WL DIODE SIL CARB 1.2KV 15A DO247 STMicroelectronics	982	-	询价单	数据表	ECOPACK®2	DO-247-2 (Straight Leads)	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.5 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 1200 V	1200pF @ 0V, 1MHz	15A	-	-	Through Hole	DO-247	-40°C ~ 175°C
MSC030SDA070K DIODE SIL CARB 700V 30A TO220-2 Microchip Technology	119	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	700 V	1.5 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	-	-	30A	-	-	Through Hole	TO-220-2	-
MSC015SDA120B DIODE SCHOTTKY 1.2KV 15A TO247 Microchip Technology	134	-	询价单	数据表	-	TO-247-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.5 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	-	-	15A	-	-	Through Hole	TO-247	-
VS-3C12ET07S2L-M3 650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division	1,557	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.5 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	65 µA @ 650 V	535pF @ 1V, 1MHz	12A	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C

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