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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
HS2M R5G

HS2M R5G

DIODE GEN PURP 1KV 2A DO214AA

Taiwan Semiconductor Corporation

7,034 -
HS2M R5G

数据表

- DO-214AA, SMB Tape & Reel (TR) Discontinued at Digi-Key Standard 1000 V 1.7 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 1000 V 30pF @ 4V, 1MHz 2A - - Surface Mount DO-214AA (SMB) -55°C ~ 150°C
HS3AB R5G

HS3AB R5G

DIODE GEN PURP 50V 3A DO214AA

Taiwan Semiconductor Corporation

6,193 -
HS3AB R5G

数据表

- DO-214AA, SMB Tape & Reel (TR) Discontinued at Digi-Key Standard 50 V 1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 50 V 80pF @ 4V, 1MHz 3A - - Surface Mount DO-214AA (SMB) -55°C ~ 150°C
HS3BB R5G

HS3BB R5G

DIODE GEN PURP 100V 3A DO214AA

Taiwan Semiconductor Corporation

7,863 -
HS3BB R5G

数据表

- DO-214AA, SMB Tape & Reel (TR) Discontinued at Digi-Key Standard 100 V 1 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 100 V 80pF @ 4V, 1MHz 3A - - Surface Mount DO-214AA (SMB) -55°C ~ 150°C
HS3GB R5G

HS3GB R5G

DIODE GEN PURP 400V 3A DO214AA

Taiwan Semiconductor Corporation

2,739 -
HS3GB R5G

数据表

- DO-214AA, SMB Tape & Reel (TR) Discontinued at Digi-Key Standard 400 V 1.3 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 400 V 80pF @ 4V, 1MHz 3A - - Surface Mount DO-214AA (SMB) -55°C ~ 150°C
HS3K R7G

HS3K R7G

DIODE GEN PURP 800V 3A DO214AB

Taiwan Semiconductor Corporation

4,106 -
HS3K R7G

数据表

- DO-214AB, SMC Tape & Reel (TR) Discontinued at Digi-Key Standard 800 V 1.7 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 10 µA @ 800 V 50pF @ 4V, 1MHz 3A - - Surface Mount DO-214AB (SMC) -55°C ~ 150°C
SF4004-TR

SF4004-TR

DIODE AVALANCHE 400V 1A SOD57

Vishay General Semiconductor - Diodes Division

8,266 -
SF4004-TR

数据表

- SOD-57, Axial Tape & Reel (TR) Active Avalanche 400 V 1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 5 µA @ 400 V 76pF @ 4V, 1MHz 1A - - Through Hole SOD-57 -55°C ~ 175°C
SF4005-TR

SF4005-TR

DIODE AVALANCHE 600V 1A SOD57

Vishay General Semiconductor - Diodes Division

9,853 -
SF4005-TR

数据表

- SOD-57, Axial Tape & Reel (TR) Active Avalanche 600 V 1.7 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 600 V - 1A - - Through Hole SOD-57 -55°C ~ 175°C
SF4006-TR

SF4006-TR

DIODE AVALANCHE 800V 1A SOD57

Vishay General Semiconductor - Diodes Division

6,469 -
SF4006-TR

数据表

- SOD-57, Axial Tape & Reel (TR) Active Avalanche 800 V 1.7 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 5 µA @ 800 V - 1A - - Through Hole SOD-57 -55°C ~ 175°C
FYPF0545STU

FYPF0545STU

DIODE SCHOTTKY 45V 5A TO220F-2L

onsemi

8,784 -
FYPF0545STU

数据表

- TO-220-2 Full Pack Tube Obsolete Schottky 45 V 550 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 45 V - 5A - - Through Hole TO-220F-2L -65°C ~ 150°C
V12PM6-M3/I

V12PM6-M3/I

DIODE SCHOTTKY 60V 12A TO277A

Vishay General Semiconductor - Diodes Division

6,513 -
V12PM6-M3/I

数据表

eSMP®, TMBS® TO-277, 3-PowerDFN Tape & Reel (TR) Active Schottky 60 V 640 mV @ 12 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 60 V 2050pF @ 4V, 1MHz 12A - - Surface Mount TO-277A (SMPC) -40°C ~ 175°C
CMDD6001 BK PBFREE

CMDD6001 BK PBFREE

DIODE GEN PURP 75V 250MA SOD323

Central Semiconductor Corp

4,214 -
CMDD6001 BK PBFREE

数据表

- SC-76, SOD-323 Bulk Active Standard 75 V 1.1 V @ 100 mA Standard Recovery >500ns, > 200mA (Io) 3 µs 500 pA @ 75 V 2pF @ 0V, 1MHz 250mA - - Surface Mount SOD-323 -65°C ~ 150°C
FFSB0665B-F085

FFSB0665B-F085

DIODE SIL CARB 650V 8A D2PAK-2

onsemi

910 -
FFSB0665B-F085

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 259pF @ 1V, 100kHz 8A - - Surface Mount TO-263 (D2PAK) -55°C ~ 175°C
S3D10065E

S3D10065E

DIODE SIL CARBIDE 650V 10A DPAK

SMC Diode Solutions

2,500 -
S3D10065E

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 621pF @ 0V, 1MHz 10A - - Surface Mount DPAK -55°C ~ 175°C
VS-3C12ET07T-M3

VS-3C12ET07T-M3

650 V POWER SIC GEN 3 MERGED PIN

Vishay General Semiconductor - Diodes Division

3,048 -
VS-3C12ET07T-M3

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.5 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 65 µA @ 650 V 535pF @ 1V, 1MHz 12A - - Through Hole TO-220AC -55°C ~ 175°C
FFSP1265A

FFSP1265A

DIODE SIL CARB 650V 15A TO220-2L

onsemi

768 -
FFSP1265A

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.75 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 665pF @ 1V, 100kHz 15A - - Through Hole TO-220-2L -55°C ~ 175°C
FFSD1065A

FFSD1065A

DIODE SIL CARBIDE 650V 18A DPAK

onsemi

6,468 -
FFSD1065A

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.75 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 575pF @ 1V, 100kHz 18A - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
FFSB1065B-F085

FFSB1065B-F085

DIODE SIL CARBIDE 650V 27A D2PAK

onsemi

1,530 -
FFSB1065B-F085

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 421pF @ 1V, 100kHz 27A Automotive AEC-Q101 Surface Mount TO-263 (D2PAK) -55°C ~ 175°C
S3D10065G

S3D10065G

DIODE SIL CARBIDE 650V 10A D2PAK

SMC Diode Solutions

496 -
S3D10065G

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 621pF @ 0V, 1MHz 10A - - Surface Mount D2PAK -55°C ~ 175°C
1N5617E3

1N5617E3

DIODE GEN PURP 400V 1A A AXIAL

Microchip Technology

194 -
1N5617E3

数据表

- A, Axial Bag Active Standard 400 V 800 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 400 V 35pF @ 12V, 1MHz 1A - - Through Hole A, Axial -65°C ~ 175°C
C6D08065Q-TR

C6D08065Q-TR

DIODE SIL CARBIDE 650V 28A 4QFN

Wolfspeed, Inc.

2,110 -
C6D08065Q-TR

数据表

- 4-PowerVQFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.5 V @ 8 A No Recovery Time > 500mA (Io) - 20 µA @ 650 V 518pF @ 0V, 1MHz 28A - - Surface Mount 4-QFN (8x8) -55°C ~ 175°C
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