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制造商	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
Adafruit Industries LLC Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED Bourns Inc. Broadcom Limited Bruckewell Central Semiconductor Corp CODIXX AG Comchip Technology Diodes Incorporated Diotec Semiconductor DNmicron EIC SEMICONDUCTOR INC. EVVO Fairchild Semiconductor fastSiC Flip Electronics Formosa Microsemi Co., Ltd. GeneSiC Semiconductor Global Power Technology-GPT Good-Ark Semiconductor Harris Corporation Honeywell Sensing and Productivity Solutions HV Components Associates HY Electronic (Cayman) Limited Infineon Technologies Inventchip IXYS JATTA KYOCERA AVX Linear Integrated Systems, Inc. Littelfuse Inc. Lumimax Optoelectronic Technology Luminus Devices Inc. MACOM Technology Solutions MDD Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NovuSem NTE Electronics, Inc NXP Semiconductors onsemi Panasonic - BSG Panasonic Electronic Components - Semiconductor Products Panjit International Inc. Phoenix Contact PN Junction Semiconductor Power Integrations Powerex Inc. Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. SanRex Corporation Sanyo Semikron SemiQ Semtech Corporation Sensata-Crydom Shenzhen Slkormicro Semicon Co., Ltd. SMC Diode Solutions Souriau-Sunbank by Eaton SparkFun Electronics STMicroelectronics SURGE Taiwan Semiconductor Corporation TE Connectivity Aerospace, Defense and Marine Torex Semiconductor Ltd Toshiba Semiconductor and Storage Varo Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Semiconductor Opto Division Vishay Siliconix WeEn Semiconductors Wolfspeed, Inc. YAGEO

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
FFSM0465A DIODE SIL CARBIDE 650V 4A 4PQFN onsemi	4,028	-	询价单	数据表	-	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.75 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	247pF @ 1V, 100kHz	4A	-	-	Surface Mount	4-PQFN (8x8)	-55°C ~ 175°C
SF4004-TAP DIODE AVALANCHE 400V 1A SOD57 Vishay General Semiconductor - Diodes Division	8,431	-	询价单	数据表	-	SOD-57, Axial	Tape & Box (TB)	Active	Avalanche	400 V	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 400 V	-	1A	-	-	Through Hole	SOD-57	-55°C ~ 175°C
SF4005-TAP DIODE AVALANCHE 600V 1A SOD57 Vishay General Semiconductor - Diodes Division	9,649	-	询价单	数据表	-	SOD-57, Axial	Tape & Box (TB)	Active	Avalanche	600 V	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 600 V	-	1A	-	-	Through Hole	SOD-57	-55°C ~ 175°C
VS-35APF06LHM3 DIODE GEN PURP 600V 35A TO247AD Vishay General Semiconductor - Diodes Division	487	-	询价单	数据表	-	TO-3P-3, SC-65-3	Tube	Active	Standard	600 V	1.46 V @ 35 A	Fast Recovery =< 500ns, > 200mA (Io)	160 ns	100 µA @ 600 V	-	35A	Automotive	AEC-Q101	Through Hole	TO-247AD (TO-3P)	-40°C ~ 150°C
SF4006-TAP DIODE AVALANCHE 800V 1A SOD57 Vishay General Semiconductor - Diodes Division	4,955	-	询价单	数据表	-	SOD-57, Axial	Tape & Box (TB)	Active	Avalanche	800 V	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 800 V	-	1A	-	-	Through Hole	SOD-57	-55°C ~ 175°C
RFUH20TF6SC9 DIODE GEN PURP 600V 20A TO220NFM Rohm Semiconductor	932	-	询价单	数据表	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	2.8 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	-	20A	-	-	Through Hole	TO-220NFM	150°C
SF4007-TAP DIODE AVALANCHE 1KV 1A SOD57 Vishay General Semiconductor - Diodes Division	9,826	-	询价单	数据表	-	SOD-57, Axial	Tape & Box (TB)	Active	Avalanche	1000 V	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 1000 V	-	1A	-	-	Through Hole	SOD-57	-55°C ~ 175°C
FFSB1065B DIODE SIL CARB 650V 27A D2PAK-2 onsemi	686	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	421pF @ 1V, 100kHz	27A	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C
IDK05G120C5XTMA1 DIODE SIC 1.2KV 19.1A TO263-1 Infineon Technologies	955	-	询价单	数据表	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	1.8 V @ 5 A	No Recovery Time > 500mA (Io)	-	33 µA @ 1200 V	301pF @ 1V, 1MHz	19.1A	-	-	Surface Mount	PG-TO263-2-1	-55°C ~ 175°C
STPSC8H065DLF DIODE SIL CARB 650V 8A POWERFLAT STMicroelectronics	5,264	-	询价单	数据表	ECOPACK®2	8-PowerVDFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.55 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	460pF @ 0V, 1MHz	8A	-	-	Surface Mount	PowerFlat™ (8x8) HV	-40°C ~ 175°C
DSEI12-12AZ-TUB DIODE GEN PURP 1.2KV 11A TO263HV IXYS	1,270	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	1200 V	2.6 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	250 µA @ 1200 V	6pF @ 600V, 1MHz	11A	-	-	Surface Mount	TO-263HV	-40°C ~ 150°C
SCS304AJTLL DIODE SIL CARBIDE 650V 4A LPTL Rohm Semiconductor	974	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Not For New Designs	SiC (Silicon Carbide) Schottky	650 V	1.5 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	200pF @ 1V, 1MHz	4A	-	-	Surface Mount	LPTL	175°C (Max)
S3D10065I DIODE SIL CARB 650V 10A TO220 SMC Diode Solutions	125	-	询价单	数据表	-	TO-220-2 Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	621pF @ 0V, 1MHz	10A	-	-	Through Hole	TO-220-Isolation	-55°C ~ 175°C
VS-E5PH6006LHN3 DIODE GEN PURP 600V 60A TO247AD Vishay General Semiconductor - Diodes Division	183	-	询价单	数据表	FRED Pt®	TO-247-2	Tube	Active	Standard	600 V	1.7 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	54 ns	25 µA @ 600 V	-	60A	Automotive	AEC-Q101	Through Hole	TO-247AD	-55°C ~ 175°C
S3D10065D1 DIODE SIL CARB 650V 10A TO247AD SMC Diode Solutions	215	-	询价单	数据表	-	TO-247-3	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	621pF @ 0V, 1MHz	10A	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
CDLL5818 DIODE SCHOTTKY 30V 1A DO213AB Microchip Technology	190	-	询价单	数据表	-	DO-213AB, MELF	Bulk	Active	Schottky	30 V	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 30 V	0.9pF @ 5V, 1MHz	1A	-	-	Surface Mount	DO-213AB	-65°C ~ 150°C
VS-45APS12LHM3 DIODE GEN PURP 1.2KV 45A TO247AD Vishay General Semiconductor - Diodes Division	179	-	询价单	数据表	-	TO-3P-3, SC-65-3	Tube	Active	Standard	1200 V	1.14 V @ 45 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	45A	Automotive	AEC-Q101	Through Hole	TO-247AD (TO-3P)	-40°C ~ 150°C
VS-3C06ET07S2L-M3 650 V POWER SIC GEN 3 MERGED PIN Vishay General Semiconductor - Diodes Division	1,541	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.5 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	35 µA @ 650 V	255pF @ 1V, 1MHz	6A	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 175°C
VS-45APS16LHM3 DIODES - TO-247-E3 Vishay General Semiconductor - Diodes Division	642	-	询价单	数据表	-	TO-3P-3, SC-65-3	Tube	Active	Standard	1600 V	1.16 V @ 45 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1600 V	-	45A	Automotive	AEC-Q101	Through Hole	TO-247AD (TO-3P)	-40°C ~ 150°C
S4D10120F DIODE SIC 1.2KV 10A ITO220AC SMC Diode Solutions	788	-	询价单	数据表	-	TO-220-2 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	772pF @ 0V, 1MHz	10A	-	-	Through Hole	ITO-220AC	-55°C ~ 175°C

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