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制造商	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
Adafruit Industries LLC Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED Bourns Inc. Broadcom Limited Bruckewell Central Semiconductor Corp CODIXX AG Comchip Technology Diodes Incorporated Diotec Semiconductor DNmicron EIC SEMICONDUCTOR INC. EVVO Fairchild Semiconductor fastSiC Flip Electronics Formosa Microsemi Co., Ltd. GeneSiC Semiconductor Global Power Technology-GPT Good-Ark Semiconductor Harris Corporation Honeywell Sensing and Productivity Solutions HV Components Associates HY Electronic (Cayman) Limited Infineon Technologies Inventchip IXYS JATTA KYOCERA AVX Linear Integrated Systems, Inc. Littelfuse Inc. Lumimax Optoelectronic Technology Luminus Devices Inc. MACOM Technology Solutions MDD Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NovuSem NTE Electronics, Inc NXP Semiconductors onsemi Panasonic - BSG Panasonic Electronic Components - Semiconductor Products Panjit International Inc. Phoenix Contact PN Junction Semiconductor Power Integrations Powerex Inc. Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. SanRex Corporation Sanyo Semikron SemiQ Semtech Corporation Sensata-Crydom Shenzhen Slkormicro Semicon Co., Ltd. SMC Diode Solutions Souriau-Sunbank by Eaton SparkFun Electronics STMicroelectronics SURGE Taiwan Semiconductor Corporation TE Connectivity Aerospace, Defense and Marine Torex Semiconductor Ltd Toshiba Semiconductor and Storage Varo Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Semiconductor Opto Division Vishay Siliconix WeEn Semiconductors Wolfspeed, Inc. YAGEO

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
SCS210AGC17 DIODE SIC 650V 10A TO220ACFP Rohm Semiconductor	1,918	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.55 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	365pF @ 1V, 1MHz	10A	-	-	Through Hole	TO-220ACFP	175°C
STTH3006PI DIODE GEN PURP 600V 30A DOP3I STMicroelectronics	444	-	询价单	数据表	-	DOP3I-2 Insulated (Straight Leads)	Tube	Active	Standard	600 V	1.85 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	25 µA @ 600 V	-	30A	-	-	Through Hole	DOP3I	175°C (Max)
VS-E5PH6012LHN3 DIODE GEN PURP 1.2KV 60A TO247AD Vishay General Semiconductor - Diodes Division	334	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	1200 V	2.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	130 ns	50 µA @ 1200 V	-	60A	Automotive	AEC-Q101	Through Hole	TO-247AD	-55°C ~ 175°C
VS-E5PH6012L-N3 DIODE GEN PURP 1.2KV 60A TO247AD Vishay General Semiconductor - Diodes Division	113	-	询价单	数据表	FRED Pt®	TO-247-2	Tube	Active	Standard	1200 V	2.3 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	130 ns	50 µA @ 1200 V	-	60A	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
S4D08120E DIODE SIL CARBIDE 1.2KV 8A DPAK SMC Diode Solutions	2,606	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	15 µA @ 1200 V	560pF @ 0V, 1MHz	8A	-	-	Surface Mount	DPAK	-55°C ~ 175°C
SCS206AGC17 DIODE SIL CARB 650V 6A TO220ACFP Rohm Semiconductor	638	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.55 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	120 µA @ 600 V	219pF @ 1V, 1MHz	6A	-	-	Through Hole	TO-220ACFP	175°C
VS-E5PX6012L-N3 DIODE GEN PURP 1.2KV 60A TO247AD Vishay General Semiconductor - Diodes Division	165	-	询价单	数据表	FRED Pt®	TO-247-2	Tube	Active	Standard	1200 V	3.15 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	120 ns	50 µA @ 1200 V	-	60A	-	-	Through Hole	TO-247AD	-55°C ~ 175°C
1N5619 DIODE GEN PURP 600V 1A AXIAL Microchip Technology	301	-	询价单	数据表	-	A, Axial	Bulk	Active	Standard	600 V	1.6 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	500 nA @ 600 V	25pF @ 12V, 1MHz	1A	-	-	Through Hole	A, Axial	-65°C ~ 175°C
VS-40EPS08-M3 DIODE GP 800V 40A TO247AC Vishay General Semiconductor - Diodes Division	678	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	800 V	1 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 800 V	-	40A	-	-	Through Hole	TO-247AC Modified	-40°C ~ 150°C
VS-65PQ015-N3 DIODE SCHOTTKY 15V 65A TO247AC Vishay General Semiconductor - Diodes Division	103	-	询价单	数据表	-	TO-247-3	Tube	Active	Schottky	15 V	500 mV @ 65 A	Fast Recovery =< 500ns, > 200mA (Io)	-	18 mA @ 15 V	-	65A	-	-	Through Hole	TO-247AC	-55°C ~ 125°C
1N4944GP-M3/73 DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division	9,585	-	询价单	数据表	SUPERECTIFIER®	DO-204AL, DO-41, Axial	Tape & Box (TB)	Obsolete	Standard	400 V	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 400 V	15pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-65°C ~ 175°C
1N4946GP-M3/73 DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division	5,904	-	询价单	数据表	SUPERECTIFIER®	DO-204AL, DO-41, Axial	Tape & Box (TB)	Obsolete	Standard	600 V	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	1 µA @ 600 V	15pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-65°C ~ 175°C
1N4947GPHM3/73 DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division	6,766	-	询价单	数据表	SUPERECTIFIER®	DO-204AL, DO-41, Axial	Tape & Box (TB)	Obsolete	Standard	800 V	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	1 µA @ 800 V	15pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-65°C ~ 175°C
1N4947GP-M3/73 DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division	6,118	-	询价单	数据表	SUPERECTIFIER®	DO-204AL, DO-41, Axial	Tape & Box (TB)	Obsolete	Standard	800 V	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	1 µA @ 800 V	15pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-65°C ~ 175°C
1N4948GP-M3/73 DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division	8,294	-	询价单	数据表	SUPERECTIFIER®	DO-204AL, DO-41, Axial	Tape & Box (TB)	Obsolete	Standard	1000 V	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	500 ns	1 µA @ 1000 V	15pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-65°C ~ 175°C
BA159GPEHE3/53 DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division	5,115	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Tape & Box (TB)	Obsolete	Standard	800 V	1.3 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	500 ns	5 µA @ 800 V	15pF @ 4V, 1MHz	1A	Automotive	AEC-Q101	Through Hole	DO-204AL (DO-41)	-65°C ~ 175°C
BAS34-TAP DIODE GEN PURP 60V 200MA DO35 Vishay General Semiconductor - Diodes Division	6,696	-	询价单	数据表	-	DO-204AH, DO-35, Axial	Cut Tape (CT)	Obsolete	Standard	60 V	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	1 nA @ 30 V	3pF @ 0V, 1MHz	200mA	Automotive	AEC-Q101	Through Hole	DO-204AH (DO-35)	175°C (Max)
BAY80-TAP DIODE GEN PURP 120V 250MA DO35 Vishay General Semiconductor - Diodes Division	8,135	-	询价单	数据表	-	DO-204AH, DO-35, Axial	Tape & Box (TB)	Obsolete	Standard	120 V	1.07 V @ 150 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 nA @ 120 V	5pF @ 0V, 1MHz	250mA	Automotive	AEC-Q101	Through Hole	DO-204AH (DO-35)	175°C (Max)
BY251P-E3/73 DIODE GEN PURP 200V 3A DO201AD Vishay General Semiconductor - Diodes Division	2,586	-	询价单	数据表	-	DO-201AD, Axial	Tape & Box (TB)	Active	Standard	200 V	1.1 V @ 3 A	Standard Recovery > 500ns, > 2A (Io)	3 µs	5 µA @ 200 V	40pF @ 4V, 1MHz	3A	-	-	Through Hole	DO-201AD	-55°C ~ 150°C
1N5400GP-TP DIODE GEN PURP 50V 3A DO201AD Micro Commercial Co	7,448	-	询价单	数据表	-	DO-201AD, Axial	Tape & Reel (TR)	Not For New Designs	Standard	50 V	1.1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 50 V	40pF @ 4V, 1MHz	3A	-	-	Through Hole	DO-201AD	-55°C ~ 150°C

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