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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N4937-E3/53

1N4937-E3/53

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division

6,877 -
1N4937-E3/53

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Active Standard 600 V 1.2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 600 V 12pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -55°C ~ 150°C
1N4937E-E3/53

1N4937E-E3/53

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division

7,079 -
1N4937E-E3/53

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Active Standard 600 V 1.2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 600 V 12pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -
1N4937GPE-E3/91

1N4937GPE-E3/91

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division

4,766 -
1N4937GPE-E3/91

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 600 V 1.2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 600 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
1N4937GPEHE3/91

1N4937GPEHE3/91

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division

8,594 -
1N4937GPEHE3/91

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 600 V 1.2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 600 V 12pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -50°C ~ 150°C
MMBD4448_R1_00001

MMBD4448_R1_00001

SURFACE MOUNT SWITCHING DIODE

Panjit International Inc.

2,708 -
MMBD4448_R1_00001

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active Standard 75 V 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 4 ns 2.5 µA @ 75 V 4pF @ 0V, 1MHz 150mA - - Surface Mount SOT-23 -55°C ~ 150°C
1N4937GP-M3/73

1N4937GP-M3/73

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division

2,673 -
1N4937GP-M3/73

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 600 V 1.2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 600 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
MURS4D-TP

MURS4D-TP

SUPER FAST RECOVERY RECTIFIER

Micro Commercial Co

5,215 -
MURS4D-TP

数据表

- DO-214AB, SMC Tube Active Standard 200 V 920 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 5 µA @ 200 V 65pF @ 4V, 1MHz 4A - - Surface Mount DO-214AB (SMC) -55°C ~ 150°C
6A05G

6A05G

DIODE GEN PURP 50V 6A R-6

SMC Diode Solutions

7,950 -
6A05G

数据表

- R-6, Axial Tape & Box (TB) Obsolete Standard 50 V 950 mV @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V 150pF @ 4V, 1MHz 6A - - Through Hole R-6 -65°C ~ 175°C
6A1G

6A1G

DIODE GEN PURP 100V 6A R-6

SMC Diode Solutions

6,107 -
6A1G

数据表

- R-6, Axial Tape & Box (TB) Obsolete Standard 100 V 950 mV @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 100 V 150pF @ 4V, 1MHz 6A - - Through Hole R-6 -65°C ~ 175°C
6A2G

6A2G

DIODE GEN PURP 200V 6A R-6

SMC Diode Solutions

4,684 -
6A2G

数据表

- R-6, Axial Tape & Box (TB) Obsolete Standard 200 V 950 mV @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 200 V 150pF @ 4V, 1MHz 6A - - Through Hole R-6 -65°C ~ 175°C
6A8G

6A8G

DIODE GEN PURP 800V 6A R-6

SMC Diode Solutions

3,100 -
6A8G

数据表

- R-6, Axial Tape & Box (TB) Obsolete Standard 800 V 950 mV @ 6 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V 150pF @ 4V, 1MHz 6A - - Through Hole R-6 -65°C ~ 175°C
VS-75EPU12L-N3

VS-75EPU12L-N3

DIODE GEN PURP 1.2KV 75A TO247AD

Vishay General Semiconductor - Diodes Division

813 -
VS-75EPU12L-N3

数据表

FRED Pt® TO-247-2 Tube Active Standard 1200 V 2.55 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 265 ns 420 µA @ 1200 V - 75A - - Through Hole TO-247AD -55°C ~ 175°C
DNA30EM2200PZ-TUB

DNA30EM2200PZ-TUB

DIODE GEN PURP 2.2KV 30A TO263HV

IXYS

441 -
DNA30EM2200PZ-TUB

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active Standard 2200 V 1.26 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 2200 V 7pF @ 700V, 1MHz 30A - - Surface Mount TO-263HV -55°C ~ 175°C
STTH60RQ06W

STTH60RQ06W

DIODE GEN PURP 600V 60A DO247

STMicroelectronics

313 -
STTH60RQ06W

数据表

- DO-247-2 (Straight Leads) Tube Active Standard 600 V - Fast Recovery =< 500ns, > 200mA (Io) 65 ns 80 µA @ 600 V - 60A - - Through Hole DO-247 175°C (Max)
SCS206AJTLL

SCS206AJTLL

DIODE SIL CARB 650V 6A TO263AB

Rohm Semiconductor

2,842 -
SCS206AJTLL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.55 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 120 µA @ 600 V 219pF @ 1V, 1MHz 6A - - Surface Mount TO-263AB 175°C (Max)
SCS306AJTLL

SCS306AJTLL

DIODE SIL CARBIDE 650V 6A LPTL

Rohm Semiconductor

2,023 -
SCS306AJTLL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.5 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 300pF @ 1V, 1MHz 6A - - Surface Mount LPTL 175°C (Max)
GD10MPS12H

GD10MPS12H

DIODE SIL CARB 1.2KV 10A TO247-2

GeneSiC Semiconductor

540 -
GD10MPS12H

数据表

SiC Schottky MPS™ TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V - No Recovery Time > 500mA (Io) 0 ns - - 10A - - Through Hole TO-247-2 175°C
VS-35EPF12LHM3

VS-35EPF12LHM3

DIODE GEN PURP 1.2KV 35A TO247AD

Vishay General Semiconductor - Diodes Division

169 -
VS-35EPF12LHM3

数据表

- TO-247-2 Tube Active Standard 1200 V 1.47 V @ 35 A Fast Recovery =< 500ns, > 200mA (Io) 450 ns 100 µA @ 1200 V - 35A Automotive AEC-Q101 Through Hole TO-247AD -40°C ~ 150°C
MSC010SDA120B

MSC010SDA120B

DIODE SIL CARB 1.2KV 10A TO247

Microchip Technology

1,511 -
MSC010SDA120B

数据表

- TO-247-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns - - 10A - - Through Hole TO-247 -
JAN1N5552

JAN1N5552

DIODE GEN PURP 600V 3A AXIAL

Microchip Technology

152 -
JAN1N5552

数据表

- B, Axial Bulk Active Standard 600 V 1.2 V @ 9 A Standard Recovery >500ns, > 200mA (Io) 2 µs 1 µA @ 600 V - 3A Military MIL-PRF-19500/420 Through Hole B, Axial -65°C ~ 175°C
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