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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N4007GPEHE3/91

1N4007GPEHE3/91

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division

8,671 -
1N4007GPEHE3/91

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 1000 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 2 µs 5 µA @ 1000 V 8pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
1N4007GPE-M3/73

1N4007GPE-M3/73

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division

5,341 -
1N4007GPE-M3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 1000 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -50°C ~ 150°C
1N4007GPHE3/53

1N4007GPHE3/53

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division

6,691 -
1N4007GPHE3/53

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 1000 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) 2 µs 5 µA @ 1000 V 8pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
1N4007GPHM3/73

1N4007GPHM3/73

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division

7,432 -
1N4007GPHM3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 1000 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -50°C ~ 150°C
1N4007GP-M3/73

1N4007GP-M3/73

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division

7,088 -
1N4007GP-M3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 1000 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 1000 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -50°C ~ 150°C
1N4148-P-TAP

1N4148-P-TAP

DIODE GEN PURP 75V 150MA DO35

Vishay General Semiconductor - Diodes Division

3,145 -
1N4148-P-TAP

数据表

- DO-204AH, DO-35, Axial Tape & Box (TB) Obsolete Standard 75 V 1 V @ 10 mA Small Signal =< 200mA (Io), Any Speed 8 ns 5 µA @ 75 V 4pF @ 0V, 1MHz 150mA Automotive AEC-Q101 Through Hole DO-204AH (DO-35) 175°C (Max)
1N4246GP-M3/73

1N4246GP-M3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

8,459 -
1N4246GP-M3/73

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 400 V 1.2 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 400 V 8pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 160°C
1N4247GP-M3/73

1N4247GP-M3/73

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division

6,864 -
1N4247GP-M3/73

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 600 V 1.2 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 600 V 8pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 160°C
1N4249GP-M3/73

1N4249GP-M3/73

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division

6,941 -
1N4249GP-M3/73

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 1000 V 1.2 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 1000 V 8pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 160°C
1N4933GP-M3/73

1N4933GP-M3/73

DIODE GEN PURP 50V 1A DO204AL

Vishay General Semiconductor - Diodes Division

4,116 -
1N4933GP-M3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 50 V 1.2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 50 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
1N4934GPE-E3/91

1N4934GPE-E3/91

DIODE GEN PURP 100V 1A DO204AL

Vishay General Semiconductor - Diodes Division

5,755 -
1N4934GPE-E3/91

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 100 V 1.2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 100 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
1N4934GPEHE3/91

1N4934GPEHE3/91

DIODE GEN PURP 100V 1A DO204AL

Vishay General Semiconductor - Diodes Division

6,428 -
1N4934GPEHE3/91

数据表

SUPERECTIFIER® DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 100 V 1.2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 100 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
1N4934GP-M3/73

1N4934GP-M3/73

DIODE GEN PURP 100V 1A DO204AL

Vishay General Semiconductor - Diodes Division

4,877 -
1N4934GP-M3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 100 V 1.2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 100 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -
1N4936GP-M3/73

1N4936GP-M3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division

3,102 -
1N4936GP-M3/73

数据表

- DO-204AL, DO-41, Axial Tape & Box (TB) Obsolete Standard 400 V 1.2 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 5 µA @ 400 V 15pF @ 4V, 1MHz 1A - - Through Hole DO-204AL (DO-41) -65°C ~ 175°C
C6D08065G

C6D08065G

DIODE SIL CARB 650V 30A TO263-2

Wolfspeed, Inc.

653 -
C6D08065G

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active SiC (Silicon Carbide) Schottky 650 V 1.4 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 518pF @ 0V, 1MHz 30A - - Surface Mount TO-263-2 -55°C ~ 175°C
IDH08G120C5XKSA1

IDH08G120C5XKSA1

DIODE SIL CARB 1.2KV TO220-1

Infineon Technologies

285 -
IDH08G120C5XKSA1

数据表

CoolSiC™+ TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 1.95 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1200 V 365pF @ 1V, 1MHz 22.8A - - Through Hole PG-TO220-2-1 -55°C ~ 175°C
SIC0860P-BP

SIC0860P-BP

DIODE SIL CARB 650V 8A TO220AC

Micro Commercial Co

4,804 -
SIC0860P-BP

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.6 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 36 µA @ 650 V 30pF @ 400V, 1MHz 8A - - Through Hole TO-220AC -55°C ~ 175°C
STPSC10H065G2-TR

STPSC10H065G2-TR

DIODE SIL CARBIDE 650V 10A D2PAK

STMicroelectronics

1,278 -
STPSC10H065G2-TR

数据表

ECOPACK®2 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.75 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 100 µA @ 650 V 480pF @ 0V, 1MHz 10A - - Surface Mount D2PAK -40°C ~ 175°C
CD5819

CD5819

DIODE SCHOTTKY 40V 1A DIE

Microchip Technology

392 -
CD5819

数据表

- Die Bulk Active Schottky 40 V 600 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 40 V - 1A Military MIL-PRF-19500/586 Surface Mount Die -55°C ~ 125°C
VS-60APH03-N3

VS-60APH03-N3

DIODE GEN PURP 300V 60A TO247AC

Vishay General Semiconductor - Diodes Division

220 -
VS-60APH03-N3

数据表

FRED Pt® TO-247-3 Tube Active Standard 300 V 1.45 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 42 ns 10 µA @ 300 V - 60A - - Through Hole TO-247AC -55°C ~ 175°C
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