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制造商	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
Adafruit Industries LLC Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED Bourns Inc. Broadcom Limited Bruckewell Central Semiconductor Corp CODIXX AG Comchip Technology Diodes Incorporated Diotec Semiconductor DNmicron EIC SEMICONDUCTOR INC. EVVO Fairchild Semiconductor fastSiC Flip Electronics Formosa Microsemi Co., Ltd. GeneSiC Semiconductor Global Power Technology-GPT Good-Ark Semiconductor Harris Corporation Honeywell Sensing and Productivity Solutions HV Components Associates HY Electronic (Cayman) Limited Infineon Technologies Inventchip IXYS JATTA KYOCERA AVX Linear Integrated Systems, Inc. Littelfuse Inc. Lumimax Optoelectronic Technology Luminus Devices Inc. MACOM Technology Solutions MDD Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NovuSem NTE Electronics, Inc NXP Semiconductors onsemi Panasonic - BSG Panasonic Electronic Components - Semiconductor Products Panjit International Inc. Phoenix Contact PN Junction Semiconductor Power Integrations Powerex Inc. Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. SanRex Corporation Sanyo Semikron SemiQ Semtech Corporation Sensata-Crydom Shenzhen Slkormicro Semicon Co., Ltd. SMC Diode Solutions Souriau-Sunbank by Eaton SparkFun Electronics STMicroelectronics SURGE Taiwan Semiconductor Corporation TE Connectivity Aerospace, Defense and Marine Torex Semiconductor Ltd Toshiba Semiconductor and Storage Varo Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Semiconductor Opto Division Vishay Siliconix WeEn Semiconductors Wolfspeed, Inc. YAGEO

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
STPSC10065DY DIODE SIL CARB 650V 10A TO220AC STMicroelectronics	1,016	-	询价单	数据表	ECOPACK®2	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	130 µA @ 650 V	670pF @ 0V, 1MHz	10A	Automotive	AEC-Q101	Through Hole	TO-220AC	-40°C ~ 175°C
STPSC10H065G-TR DIODE SIL CARBIDE 650V 10A D2PAK STMicroelectronics	516	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	480pF @ 0V, 1MHz	10A	-	-	Surface Mount	D2PAK	-40°C ~ 175°C
STPSC10065G2-TR DIODE SIL CARBIDE 650V 10A D2PAK STMicroelectronics	1,206	-	询价单	数据表	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	130 µA @ 650 V	670pF @ 0V, 1MHz	10A	-	-	Surface Mount	D2PAK	-40°C ~ 175°C
DMA30E1800HA DIODE GEN PURP 1.8KV 30A TO247 IXYS	300	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	1800 V	1.25 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	40 µA @ 1800 V	10pF @ 400V, 1MHz	30A	-	-	Through Hole	TO-247	-55°C ~ 175°C
MSC010SDA120K DIODE SIL CARB 1.2KV 10A TO220 Microchip Technology	178	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.5 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	-	-	10A	-	-	Through Hole	TO-220-2	-
1N4004GPE-M3/73 DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division	2,084	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Tape & Box (TB)	Obsolete	Standard	400 V	1.1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 µA @ 400 V	15pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-50°C ~ 150°C
1N4004GPHM3/73 DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division	4,488	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Tape & Box (TB)	Obsolete	Standard	400 V	1.1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 µA @ 400 V	15pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-50°C ~ 150°C
DSI45-12A DIODE GEN PURP 1.2KV 45A TO247AD IXYS	635	-	询价单	数据表	-	TO-247-2	Tube	Active	Standard	1200 V	1.28 V @ 45 A	Standard Recovery >500ns, > 200mA (Io)	-	20 µA @ 1200 V	18pF @ 400V, 1MHz	45A	-	-	Through Hole	TO-247AD	-40°C ~ 175°C
1N4004GP-M3/73 DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division	6,188	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Tape & Box (TB)	Obsolete	Standard	400 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 400 V	15pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-50°C ~ 150°C
1N4005-E3/53 DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division	7,475	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Tape & Box (TB)	Active	Standard	600 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 600 V	15pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-50°C ~ 150°C
1N4005E-E3/53 DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division	8,812	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Tape & Box (TB)	Active	Standard	600 V	1.1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 µA @ 600 V	15pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-50°C ~ 150°C
1N4005GPEHE3/53 DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division	3,634	-	询价单	数据表	SUPERECTIFIER®	DO-204AL, DO-41, Axial	Tape & Box (TB)	Obsolete	Standard	600 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	5 µA @ 600 V	8pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-65°C ~ 175°C
1N4005GPHM3/73 DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division	5,736	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Tape & Box (TB)	Obsolete	Standard	600 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 600 V	15pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-50°C ~ 150°C
1N4005GP-M3/73 DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division	7,776	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Tape & Box (TB)	Obsolete	Standard	600 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 600 V	15pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-50°C ~ 150°C
1N4006-E3/53 DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division	3,676	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Tape & Box (TB)	Active	Standard	800 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 800 V	15pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-50°C ~ 150°C
C6D08065E DIODE SIL CARB 650V 29A TO252-2 Wolfspeed, Inc.	767	-	询价单	数据表	Z-Rec®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.5 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	518pF @ 0V, 1MHz	29A	-	-	Surface Mount	TO-252-2	-55°C ~ 175°C
1N4006GP-M3/73 DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division	9,052	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Tape & Box (TB)	Obsolete	Standard	800 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 800 V	15pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-50°C ~ 150°C
1N4007GPE-E3/53 DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division	8,233	-	询价单	数据表	SUPERECTIFIER®	DO-204AL, DO-41, Axial	Tape & Box (TB)	Active	Standard	1000 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	5 µA @ 1000 V	8pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-65°C ~ 175°C
1N4007GPE-E3/91 DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division	4,007	-	询价单	数据表	-	DO-204AL, DO-41, Axial	Cut Tape (CT)	Obsolete	Standard	1000 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	5 µA @ 1000 V	8pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-65°C ~ 175°C
1N4007GPEHE3/53 DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division	9,338	-	询价单	数据表	SUPERECTIFIER®	DO-204AL, DO-41, Axial	Tape & Box (TB)	Obsolete	Standard	1000 V	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	5 µA @ 1000 V	8pF @ 4V, 1MHz	1A	-	-	Through Hole	DO-204AL (DO-41)	-65°C ~ 175°C

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