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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
DSI30-08AS-TRL

DSI30-08AS-TRL

DIODE GEN PURP 800V 30A TO263AA

IXYS

2,782 -
DSI30-08AS-TRL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 800 V 1.29 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 800 V 10pF @ 400V, 1MHz 30A - - Surface Mount TO-263AA -40°C ~ 175°C
IDW40E65D2FKSA1

IDW40E65D2FKSA1

DIODE GP 650V 80A TO247-3-1

Infineon Technologies

2,289 -
IDW40E65D2FKSA1

数据表

- TO-247-3 Tube Active Standard 650 V 2.3 V @ 40 A Fast Recovery =< 500ns, > 200mA (Io) 75 ns 40 µA @ 650 V - 80A - - Through Hole PG-TO247-3-1 -40°C ~ 175°C
S4D05120E

S4D05120E

DIODE SIL CARBIDE 1.2KV 5A DPAK

SMC Diode Solutions

2,432 -
S4D05120E

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 302pF @ 0V, 1MHz 5A - - Surface Mount DPAK -55°C ~ 175°C
STPSC8H065B-TR

STPSC8H065B-TR

DIODE SIL CARBIDE 650V 8A DPAK

STMicroelectronics

13,754 -
STPSC8H065B-TR

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.75 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 414pF @ 0V, 1MHz 8A - - Surface Mount DPAK -40°C ~ 175°C
VS-20ETF12THM3

VS-20ETF12THM3

DIODE GEN PURP 1.2KV 20A TO220AC

Vishay General Semiconductor - Diodes Division

848 -
VS-20ETF12THM3

数据表

- TO-220-2 Tube Active Standard 1200 V 1.31 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 400 ns 100 µA @ 1200 V - 20A Automotive AEC-Q101 Through Hole TO-220AC -40°C ~ 150°C
C6D06065G-TR

C6D06065G-TR

DIODE SIL CARB 650V 23A TO263-2

Wolfspeed, Inc.

2,423 -
C6D06065G-TR

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.4 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 393pF @ 0V, 1MHz 23A - - Surface Mount TO-263-2 -55°C ~ 175°C
C6D06065Q-TR

C6D06065Q-TR

DIODE SIL CARBIDE 650V 21A 4QFN

Wolfspeed, Inc.

2,173 -
C6D06065Q-TR

数据表

- 4-PowerVQFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 1.5 V @ 6 A No Recovery Time > 500mA (Io) - 20 µA @ 650 V 393pF @ 0V, 1MHz 21A - - Surface Mount 4-QFN (8x8) -55°C ~ 175°C
C6D06065G

C6D06065G

DIODE SIL CARB 650V 23A TO263-2

Wolfspeed, Inc.

1,121 -
C6D06065G

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active SiC (Silicon Carbide) Schottky 650 V 1.4 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 393pF @ 0V, 1MHz 23A - - Surface Mount TO-263-2 -55°C ~ 175°C
C6D06065A

C6D06065A

DIODE SIL CARB 650V 24A TO220-2

Wolfspeed, Inc.

773 -
C6D06065A

数据表

Z-Rec® TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 1.5 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 30 µA @ 650 V 394pF @ 0V, 1MHz 24A - - Through Hole TO-220-2 -55°C ~ 175°C
IDW75E60FKSA1

IDW75E60FKSA1

DIODE GP 600V 120A TO247-3-1

Infineon Technologies

454 -
IDW75E60FKSA1

数据表

- TO-247-3 Tube Active Standard 600 V 2 V @ 75 A Fast Recovery =< 500ns, > 200mA (Io) 121 ns 40 µA @ 600 V - 120A - - Through Hole PG-TO247-3-1 -55°C ~ 175°C
VS-8EWF02S-M3

VS-8EWF02S-M3

DIODE GEN PURP 200V 8A DPAK

Vishay General Semiconductor - Diodes Division

879 -
VS-8EWF02S-M3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Active Standard 200 V 1.2 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 55 ns 100 µA @ 200 V - 8A - - Surface Mount TO-252AA (DPAK) -40°C ~ 150°C
MBR5200VPTR-G1

MBR5200VPTR-G1

DIODE SCHOTTKY 200V 5A DO27

Diodes Incorporated

5,043 -
MBR5200VPTR-G1

数据表

- DO-201AA, DO-27, Axial Tape & Box (TB) Obsolete Schottky 200 V 950 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 200 V - 5A - - Through Hole DO-27 -65°C ~ 150°C
SR5010L-TP

SR5010L-TP

Interface

Micro Commercial Co

8,237 -
SR5010L-TP

数据表

- DO-201AD, Axial Bulk Active Schottky 100 V 700 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V 200pF @ 4V, 1MHz 5A - - Through Hole DO-201AD -55°C ~ 150°C
S3AHE3/57T

S3AHE3/57T

DIODE GEN PURP 50V 3A DO214AB

Vishay General Semiconductor - Diodes Division

8,059 -
S3AHE3/57T

数据表

- DO-214AB, SMC Tape & Reel (TR) Obsolete Standard 50 V 1.15 V @ 2.5 A Standard Recovery >500ns, > 200mA (Io) 2.5 µs 10 µA @ 50 V 60pF @ 4V, 1MHz 3A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -55°C ~ 150°C
S3BHE3/57T

S3BHE3/57T

DIODE GEN PURP 100V 3A DO214AB

Vishay General Semiconductor - Diodes Division

5,583 -
S3BHE3/57T

数据表

- DO-214AB, SMC Tape & Reel (TR) Obsolete Standard 100 V 1.15 V @ 2.5 A Standard Recovery >500ns, > 200mA (Io) 2.5 µs 10 µA @ 100 V 60pF @ 4V, 1MHz 3A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -55°C ~ 150°C
S3DHE3/57T

S3DHE3/57T

DIODE GEN PURP 200V 3A DO214AB

Vishay General Semiconductor - Diodes Division

9,739 -
S3DHE3/57T

数据表

- DO-214AB, SMC Tape & Reel (TR) Obsolete Standard 200 V 1.15 V @ 2.5 A Standard Recovery >500ns, > 200mA (Io) 2.5 µs 10 µA @ 200 V 60pF @ 4V, 1MHz 3A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -55°C ~ 150°C
S3GHE3/57T

S3GHE3/57T

DIODE GEN PURP 400V 3A DO214AB

Vishay General Semiconductor - Diodes Division

5,945 -
S3GHE3/57T

数据表

- DO-214AB, SMC Tape & Reel (TR) Obsolete Standard 400 V 1.15 V @ 2.5 A Standard Recovery >500ns, > 200mA (Io) 2.5 µs 10 µA @ 400 V 60pF @ 4V, 1MHz 3A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -55°C ~ 150°C
S3JHE3/57T

S3JHE3/57T

DIODE GEN PURP 600V 3A DO214AB

Vishay General Semiconductor - Diodes Division

6,507 -
S3JHE3/57T

数据表

- DO-214AB, SMC Tape & Reel (TR) Obsolete Standard 600 V 1.15 V @ 2.5 A Standard Recovery >500ns, > 200mA (Io) 2.5 µs 10 µA @ 600 V 60pF @ 4V, 1MHz 3A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -55°C ~ 150°C
S3KHE3/57T

S3KHE3/57T

DIODE GEN PURP 800V 3A DO214AB

Vishay General Semiconductor - Diodes Division

4,704 -
S3KHE3/57T

数据表

- DO-214AB, SMC Tape & Reel (TR) Obsolete Standard 800 V 1.15 V @ 2.5 A Standard Recovery >500ns, > 200mA (Io) 2.5 µs 10 µA @ 800 V 60pF @ 4V, 1MHz 3A Automotive AEC-Q101 Surface Mount DO-214AB (SMC) -55°C ~ 150°C
VS-HFA04TB60-N3

VS-HFA04TB60-N3

DIODE GEN PURP 600V 4A TO220AC

Vishay General Semiconductor - Diodes Division

8,979 -
VS-HFA04TB60-N3

数据表

- TO-220-2 Tube Obsolete Standard 600 V 1.8 V @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 42 ns 3 µA @ 600 V - 4A - - Through Hole TO-220AC -55°C ~ 150°C
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