onsemi|单个二极管 - 页 279

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
RHRP3060-F102 DIODE GEN PURP 600V 30A TO220-2 onsemi	8,024	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	Standard	600 V	2.1 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	250 µA @ 600 V	-	30A	-	-	Through Hole	TO-220-2	-65°C ~ 175°C
RHRP860-F102 DIODE GEN PURP 600V 8A TO220-2 onsemi	9,332	-	询价单	数据表	-	TO-220-2	Tube	Obsolete	Standard	600 V	2.1 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	100 µA @ 600 V	-	8A	-	-	Through Hole	TO-220-2	-65°C ~ 175°C
FFSP0865A DIODE SIL CARB 650V 13A TO220-2 onsemi	790	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.75 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	463pF @ 1V, 100kHz	13A	-	-	Through Hole	TO-220-2	-55°C ~ 175°C
FFSM0465A DIODE SIL CARBIDE 650V 4A 4PQFN onsemi	4,028	-	询价单	数据表	-	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.75 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	247pF @ 1V, 100kHz	4A	-	-	Surface Mount	4-PQFN (8x8)	-55°C ~ 175°C
FFSB1065B DIODE SIL CARB 650V 27A D2PAK-2 onsemi	686	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	421pF @ 1V, 100kHz	27A	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C
FFSM0665A DIODE SIL CARBIDE 650V 8A 4PQFN onsemi	2,860	-	询价单	数据表	-	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.75 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	365pF @ 1V, 100kHz	8A	-	-	Surface Mount	4-PQFN (8x8)	-55°C ~ 175°C
FYPF0545STU DIODE SCHOTTKY 45V 5A TO220F-2L onsemi	8,784	-	询价单	数据表	-	TO-220-2 Full Pack	Tube	Obsolete	Schottky	45 V	550 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 45 V	-	5A	-	-	Through Hole	TO-220F-2L	-65°C ~ 150°C
FFSB0665B-F085 DIODE SIL CARB 650V 8A D2PAK-2 onsemi	910	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	259pF @ 1V, 100kHz	8A	-	-	Surface Mount	TO-263 (D2PAK)	-55°C ~ 175°C
FFSP1265A DIODE SIL CARB 650V 15A TO220-2L onsemi	768	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.75 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	665pF @ 1V, 100kHz	15A	-	-	Through Hole	TO-220-2L	-55°C ~ 175°C
FFSD1065A DIODE SIL CARBIDE 650V 18A DPAK onsemi	6,468	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	1.75 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	575pF @ 1V, 100kHz	18A	-	-	Surface Mount	TO-252 (DPAK)	-55°C ~ 175°C

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