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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CDLL5818/TRDIODE SCHOTTKY 30V 1A DO213AB Microchip Technology |
2,875 | - |
|
数据表 |
- | DO-213AB, MELF | Tape & Reel (TR) | Active | Schottky | 30 V | 600 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 30 V | 0.9pF @ 5V, 1MHz | 1A | - | - | Surface Mount | DO-213AB | -65°C ~ 150°C |
|
JANTX1N4246/TRDIODE GEN PURP 400V 1A Microchip Technology |
7,927 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 400 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 400 V | - | 1A | Military | MIL-PRF-19500/286 | Through Hole | A, Axial | -65°C ~ 175°C |
|
JAN1N5619DIODE GEN PURP 600V 1A AXIAL Microchip Technology |
2,407 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 600 V | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 500 nA @ 800 V | - | 1A | Military | MIL-PRF-19500/429 | Through Hole | A, Axial | -65°C ~ 175°C |
|
JANTX1N4245DIODE GEN PURP 200V 1A AXIAL Microchip Technology |
5,824 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 200 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 200 V | - | 1A | Military | MIL-PRF-19500/286 | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
CD5818DIODE SCHOTTKY 30V 1A DIE Microchip Technology |
3,901 | - |
|
数据表 |
- | Die | Tape & Reel (TR) | Active | Schottky | 30 V | 600 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 30 V | - | 1A | Military | MIL-PRF-19500/586 | Surface Mount | Die | -55°C ~ 125°C |
|
JANTX1N3600/TRDIODE GEN PURP 50V 200MA DO35 Microchip Technology |
8,033 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 1 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 100 nA @ 50 V | - | 200mA | Military | MIL-PRF-19500/231 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
|
1N5620/TRDIODE GEN PURP 800V 1A Microchip Technology |
2,463 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 800 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 500 nA @ 800 V | - | 1A | - | - | Through Hole | A, Axial | -65°C ~ 200°C |
|
|
1N5621/TRDIODE GEN PURP 800V 1A Microchip Technology |
2,215 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 800 V | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 500 nA @ 800 V | 20pF @ 12V, 1MHz | 1A | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
1N486AZENER DIODE Microchip Technology |
5,671 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
JAN1N4153-1/TRDIODE GEN PURP 50V 150MA DO35 Microchip Technology |
2,296 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Tape & Reel (TR) | Active | Standard | 50 V | 880 mV @ 20 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 50 nA @ 50 V | 2pF @ 0V, 1MHz | 150mA | Military | MIL-PRF-19500/337 | Through Hole | DO-204AH (DO-35) | -65°C ~ 200°C |
