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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N3611/TR

1N3611/TR

DIODE GEN PURP 200V 1A

Microchip Technology

5,046 -
1N3611/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 200 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 200 V - 1A - - Through Hole A, Axial -65°C ~ 175°C
1N5615/TR

1N5615/TR

DIODE GEN PURP 200V 1A

Microchip Technology

7,093 -
1N5615/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 200 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 200 V 45pF @ 12V, 1MHz 1A - - Through Hole A, Axial -65°C ~ 175°C
1N5615E3

1N5615E3

DIODE GEN PURP 200V 1A A AXIAL

Microchip Technology

2,326 -
1N5615E3

数据表

- Axial Bulk Active Standard 200 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 200 V 45pF @ 12V, 1MHz 1A - - Through Hole A, Axial -65°C ~ 175°C
1N483BUR

1N483BUR

DIODE GEN PURP 225V 50MA DO213AA

Microchip Technology

6,928 -
1N483BUR

数据表

- DO-213AA Bulk Active Standard 225 V 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 25 nA @ 225 V - 50mA - - Surface Mount DO-213AA -65°C ~ 175°C
1N485BUR

1N485BUR

DIODE GEN PURP 180V 100MA DO213

Microchip Technology

6,429 -
1N485BUR

数据表

- DO-213AA Bulk Active Standard 180 V 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 25 nA @ 180 V - 100mA - - Surface Mount DO-213AA -65°C ~ 175°C
1N486BUR

1N486BUR

DIODE RECT STD RECOVERY

Microchip Technology

9,364 -
1N486BUR

数据表

* - Bulk Active - - - - - - - - - - - - -
JAN1N5806

JAN1N5806

DIODE GEN PURP 150V 2.5A AXIAL

Microchip Technology

9,231 -
JAN1N5806

数据表

- A, Axial Bulk Active Standard 150 V 975 mV @ 2.5 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 150 V 25pF @ 10V, 1MHz 2.5A Military MIL-PRF-19500/477 Through Hole A, Axial -65°C ~ 175°C
JAN1N4942

JAN1N4942

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

7,616 -
JAN1N4942

数据表

- A, Axial Bulk Active Standard 200 V 1.3 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - 1A Military MIL-PRF-19500/359 Through Hole A, Axial -65°C ~ 175°C
1N5617E3/TR

1N5617E3/TR

DIODE GEN PURP 400V 1A A AXIAL

Microchip Technology

3,619 -
1N5617E3/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 400 V 800 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 400 V 35pF @ 12V, 1MHz 1A - - Through Hole A, Axial -65°C ~ 175°C
APT30D60SG/TR

APT30D60SG/TR

DIODE GEN PURP 600V 30A D3PAK

Microchip Technology

7,378 -
APT30D60SG/TR

数据表

- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active Standard 600 V - - - - - 30A - - Surface Mount D3PAK -
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