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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JAN1N3614

JAN1N3614

DIODE GEN PURP 800V 1A AXIAL

Microchip Technology

4,830 -
JAN1N3614

数据表

- A, Axial Bulk Active Standard 800 V 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 800 V - 1A Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
APT60D60SG

APT60D60SG

DIODE GEN PURP 60A TO247

Microchip Technology

2,214 -
APT60D60SG

数据表

- TO-247-2 Tube Active Standard - 1.8 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 130 ns 250 µA @ 600 V - 60A - - Through Hole TO-247 -55°C ~ 175°C
1N4248/TR

1N4248/TR

DIODE GEN PURP 800V 1A

Microchip Technology

9,722 -
1N4248/TR

数据表

- A, Axial Tape & Reel (TR) Active Standard 800 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 5 µs 1 µA @ 800 V - 1A - - Through Hole A, Axial -65°C ~ 175°C
JAN1N5616

JAN1N5616

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

5,991 -
JAN1N5616

数据表

- A, Axial Bulk Active Standard 400 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 400 V - 1A Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
1N6677/TR

1N6677/TR

DIODE SCHOTTKY 40V 200MA DO35

Microchip Technology

7,266 -
1N6677/TR

数据表

- DO-204AH, DO-35, Axial Tape & Reel (TR) Active Schottky 40 V 500 mV @ 200 mA Small Signal =< 200mA (Io), Any Speed - 5 µA @ 40 V 50pF @ 0V, 1MHz 200mA - - Through Hole DO-204AH (DO-35) -65°C ~ 125°C
1N6677-1/TR

1N6677-1/TR

DIODE SCHOTTKY 40V 200MA DO35

Microchip Technology

2,832 -
1N6677-1/TR

数据表

- DO-204AH, DO-35, Axial Tape & Reel (TR) Active Schottky 40 V 500 mV @ 200 mA Small Signal =< 200mA (Io), Any Speed - 5 µA @ 40 V 50pF @ 0V, 1MHz 200mA - - Through Hole DO-204AH (DO-35) -65°C ~ 125°C
1N6677-1E3

1N6677-1E3

DIODE SCHOTTKY 40V 200MA DO35

Microchip Technology

6,362 -
1N6677-1E3

数据表

- DO-204AH, DO-35, Axial Bulk Active Schottky 40 V 500 mV @ 200 mA Small Signal =< 200mA (Io), Any Speed - 5 µA @ 40 V 50pF @ 0V, 1MHz 200mA - - Through Hole DO-204AH (DO-35) -65°C ~ 125°C
JAN1N5614

JAN1N5614

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

5,314 -
JAN1N5614

数据表

- A, Axial Bulk Active Standard 200 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 200 V - 1A Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
JAN1N5618

JAN1N5618

DIODE GEN PURP 600V 1A AXIAL

Microchip Technology

5,484 -
JAN1N5618

数据表

- A, Axial Bulk Active Standard 600 V 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 600 V - 1A Military MIL-PRF-19500/427 Through Hole A, Axial -65°C ~ 200°C
CD5817

CD5817

DIODE SCHOTTKY 20V 1A DIE

Microchip Technology

3,726 -
CD5817

数据表

- Die Tape & Reel (TR) Active Schottky 20 V 600 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 20 V - 1A Military MIL-PRF-19500/586 Surface Mount Die -55°C ~ 125°C
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