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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N5417E3DIODE GEN PURP 200V 3A B AXIAL Microchip Technology |
7,564 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 200 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | - | - | 3A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
1N486B/TRDIODE GEN PURP 225V 200MA DO35 Microchip Technology |
8,804 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Tape & Reel (TR) | Active | Standard | 225 V | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 25 nA @ 225 V | - | 200mA | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 200°C |
|
|
1N5417-1/TRDIODE GEN PURP REV 200V 3A B Microchip Technology |
3,327 | - |
|
数据表 |
- | Axial | Tape & Reel (TR) | Active | Standard, Reverse Polarity | 200 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | - | 3A | - | - | Through Hole | B | -65°C ~ 175°C |
|
1N4942DIODE GEN PURP 200V 1A AXIAL Microchip Technology |
4,966 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 200 V | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | 45pF @ 12V, 1MHz | 1A | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
JAN1N5806/TRDIODE GEN PURP 150V 2.5A Microchip Technology |
2,346 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 150 V | 975 mV @ 2.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | 2.5A | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |
|
1N5417/TRDIODE GEN PURP 200V 3A B AXIAL Microchip Technology |
2,832 | - |
|
数据表 |
- | Axial | Tape & Reel (TR) | Active | Standard | 200 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | - | 3A | - | - | Through Hole | B, Axial | -65°C ~ 175°C |
|
|
1N4942-1DIODE GEN PURP 200V 1A Microchip Technology |
5,122 | - |
|
数据表 |
- | Axial | Bulk | Active | Standard | 200 V | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 1 µA @ 200 V | 45pF @ 12V, 1MHz | 1A | - | - | Through Hole | - | -65°C ~ 175°C |
|
|
1N3613DIODE GEN PURP 600V 1A AXIAL Microchip Technology |
3,712 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 600 V | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 600 V | - | 1A | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
JANTX1N3611/TRDIODE GEN PURP 200V 1A Microchip Technology |
9,926 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 200 V | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 200 V | - | 1A | Military | MIL-PRF-19500/228 | Through Hole | A, Axial | -65°C ~ 175°C |
|
|
1N3611E3/TRDIODE GEN PURP 200V 1A A AXIAL Microchip Technology |
4,493 | - |
|
数据表 |
- | A, Axial | Tape & Reel (TR) | Active | Standard | 200 V | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 200 V | - | 1A | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
