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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTXV1N647-1DIODE GEN PURP 400V 400MA DO35 Microchip Technology |
7,273 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 400 V | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 400 V | - | 400mA | Military | MIL-PRF-19500/240 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
|
JAN1N649-1DIODE GEN PURP 600V 400MA DO35 Microchip Technology |
6,007 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 600 V | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 600 V | - | 400mA | Military | MIL-PRF-19500/240 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
|
JANTXV1N649-1DIODE GEN PURP 600V 400MA DO35 Microchip Technology |
6,214 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 600 V | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 600 V | - | 400mA | Military | MIL-PRF-19500/240 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
JANTX1N649UR-1DIODE GP 600V 400MA DO213AA Microchip Technology |
3,051 | - |
|
数据表 |
- | DO-213AA | Bulk | Active | Standard | 600 V | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 600 V | - | 400mA | Military | MIL-PRF-19500/240 | Surface Mount | DO-213AA | -65°C ~ 175°C |
|
|
JANTX1N6510DIODE GP 75V 300MA 16FLATPACK Microchip Technology |
2,612 | - |
|
数据表 |
- | 16-CFlatPack | Bulk | Active | Standard | 75 V | 1 V @ 300 mA | Fast Recovery =< 500ns, > 200mA (Io) | 10 ns | - | - | 300mA | Military | MIL-PRF-19500/478 | Surface Mount | 16-Flatpack | - |
|
|
JANS1N6661DIODE GEN PURP 225V 500MA DO35 Microchip Technology |
9,910 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 225 V | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 225 V | - | 500mA | Military | MIL-PRF-19500/587 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
|
JANTX1N6661DIODE GEN PURP 225V 500MA DO35 Microchip Technology |
7,714 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 225 V | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 225 V | - | 500mA | Military | MIL-PRF-19500/587 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
JANTX1N6661USDIODE GEN PURP 225V 500MA D-5A Microchip Technology |
6,840 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 225 V | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 225 V | - | 500mA | Military | MIL-PRF-19500/587 | Surface Mount | D-5A | -65°C ~ 175°C |
|
|
JANTXV1N6661USDIODE GEN PURP 225V 500MA D-5A Microchip Technology |
9,060 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 225 V | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 225 V | - | 500mA | Military | MIL-PRF-19500/587 | Surface Mount | D-5A | -65°C ~ 175°C |
|
|
JANTX1N6662DIODE GEN PURP 400V 500MA DO35 Microchip Technology |
6,781 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 400 V | 1 V @ 400 mA | Standard Recovery >500ns, > 200mA (Io) | - | 50 nA @ 400 V | - | 500mA | Military | MIL-PRF-19500/587 | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
