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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANS1N6662US

JANS1N6662US

DIODE GEN PURP 400V 500MA D-5A

Microchip Technology

4,726 -
JANS1N6662US

数据表

- SQ-MELF, A Bulk Active Standard 400 V 1 V @ 400 mA Standard Recovery >500ns, > 200mA (Io) - 50 nA @ 400 V - 500mA Military MIL-PRF-19500/587 Surface Mount D-5A -65°C ~ 175°C
JAN1N6677UR-1

JAN1N6677UR-1

DIODE SCHOTTKY 40V 200MA DO213AA

Microchip Technology

9,289 -
JAN1N6677UR-1

数据表

- DO-213AA Bulk Active Schottky 40 V 500 mV @ 200 mA Small Signal =< 200mA (Io), Any Speed - 50 µA @ 40 V 50pF @ 0V, 1MHz 200mA Military MIL-PRF-19500/610 Surface Mount DO-213AA -65°C ~ 175°C
JANS1N6677UR-1

JANS1N6677UR-1

DIODE SCHOTTKY 40V 200MA DO213AA

Microchip Technology

6,264 -
JANS1N6677UR-1

数据表

- DO-213AA Bulk Active Schottky 40 V 500 mV @ 200 mA Small Signal =< 200mA (Io), Any Speed - 5 µA @ 40 V - 200mA Military MIL-PRF-19500/610 Surface Mount DO-213AA -65°C ~ 125°C
JANTX1N6677UR-1

JANTX1N6677UR-1

DIODE SCHOTTKY 40V 200MA DO213AA

Microchip Technology

9,454 -
JANTX1N6677UR-1

数据表

- DO-213AA Bulk Active Schottky 40 V 500 mV @ 200 mA Small Signal =< 200mA (Io), Any Speed - 5 µA @ 40 V - 200mA Military MIL-PRF-19500/610 Surface Mount DO-213AA -65°C ~ 125°C
JAN1N6761UR-1

JAN1N6761UR-1

DIODE SCHOTTKY 100V 1A DO213AB

Microchip Technology

2,477 -
JAN1N6761UR-1

数据表

- DO-213AB, MELF (Glass) Bulk Active Schottky 100 V 380 mV @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V 70pF @ 5V, 1MHz 1A Military MIL-PRF-19500/586 Surface Mount DO-213AB (MELF, LL41) -65°C ~ 150°C
JANS1N6761UR-1

JANS1N6761UR-1

DIODE SCHOTTKY 100V 1A DO213AB

Microchip Technology

6,026 -
JANS1N6761UR-1

数据表

- DO-213AB, MELF (Glass) Bulk Active Schottky 100 V 380 mV @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V 70pF @ 5V, 1MHz 1A Military MIL-PRF-19500/586 Surface Mount DO-213AB (MELF, LL41) -65°C ~ 150°C
JANTX1N6761UR-1

JANTX1N6761UR-1

DIODE SCHOTTKY 100V 1A DO213AB

Microchip Technology

4,701 -
JANTX1N6761UR-1

数据表

- DO-213AB, MELF (Glass) Bulk Active Schottky 100 V 380 mV @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V - 1A Military MIL-PRF-19500/586 Surface Mount DO-213AB (MELF, LL41) -65°C ~ 125°C
JANTXV1N6761UR-1

JANTXV1N6761UR-1

DIODE SCHOTTKY 100V 1A DO213AB

Microchip Technology

3,425 -
JANTXV1N6761UR-1

数据表

- DO-213AB, MELF (Glass) Bulk Active Schottky 100 V 380 mV @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V 70pF @ 5V, 1MHz 1A Military MIL-PRF-19500/586 Surface Mount DO-213AB (MELF, LL41) -65°C ~ 150°C
JAN1N6845U3

JAN1N6845U3

DIODE SCHOTTKY 45V 30A U3

Microchip Technology

9,022 -
JAN1N6845U3

数据表

- 3-SMD, No Lead Bulk Active Schottky 45 V 860 mV @ 40 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 45 V 800pF @ 5V, 1MHz 30A Military MIL-PRF-19500/682 Surface Mount U3 (SMD-0.5) -65°C ~ 150°C
JANTX1N6845U3

JANTX1N6845U3

DIODE SCHOTTKY 45V 30A U3

Microchip Technology

8,836 -
JANTX1N6845U3

数据表

- 3-SMD, No Lead Bulk Active Schottky 45 V 860 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 45 V 800pF @ 5V, 1MHz 30A Military MIL-PRF-19500/682 Surface Mount U3 (SMD-0.5) -65°C ~ 150°C
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