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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N4938-1DIODE GEN PURP 175V 100MA DO35 Microchip Technology |
369 | - |
|
数据表 |
- | DO-204AH, DO-35, Axial | Bulk | Active | Standard | 175 V | 1 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 50 ns | 100 nA @ 175 V | - | 100mA | - | - | Through Hole | DO-204AH (DO-35) | -65°C ~ 175°C |
|
APT40DQ120SGDIODE GEN PURP 1.2KV 40A D3PAK Microchip Technology |
958 | - |
|
数据表 |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | Standard | 1200 V | 3.4 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 350 ns | 100 µA @ 1200 V | - | 40A | - | - | Surface Mount | D3PAK | -55°C ~ 175°C |
|
CDLL5818DIODE SCHOTTKY 30V 1A DO213AB Microchip Technology |
190 | - |
|
数据表 |
- | DO-213AB, MELF | Bulk | Active | Schottky | 30 V | 600 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 30 V | 0.9pF @ 5V, 1MHz | 1A | - | - | Surface Mount | DO-213AB | -65°C ~ 150°C |
|
1N5617E3DIODE GEN PURP 400V 1A A AXIAL Microchip Technology |
194 | - |
|
数据表 |
- | A, Axial | Bag | Active | Standard | 400 V | 800 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 400 V | 35pF @ 12V, 1MHz | 1A | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
1N4247DIODE GEN PURP 600V 1A AXIAL Microchip Technology |
338 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 600 V | 1.3 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 5 µs | 1 µA @ 600 V | - | 1A | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
|
1N3595UR-1DIODE GP 125V 150MA DO213AA Microchip Technology |
624 | - |
|
数据表 |
- | DO-213AA | Bulk | Active | Standard | 125 V | 1 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 1 nA @ 125 V | - | 150mA | - | - | Surface Mount | DO-213AA | -65°C ~ 175°C |
|
APT15DQ120BHBGDIODE GEN PURP 1.2KV 15A TO247-3 Microchip Technology |
101 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | Standard | 1200 V | 3.5 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 240 ns | 100 µA @ 1200 V | - | 15A | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
|
MSC030SDA070KDIODE SIL CARB 700V 30A TO220-2 Microchip Technology |
119 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 700 V | 1.5 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | - | - | 30A | - | - | Through Hole | TO-220-2 | - |
|
MSC015SDA120BDIODE SCHOTTKY 1.2KV 15A TO247 Microchip Technology |
134 | - |
|
数据表 |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | - | - | 15A | - | - | Through Hole | TO-247 | - |
|
|
JANTX1N3595UR-1DIODE GP 125V 150MA DO213AA Microchip Technology |
141 | - |
|
数据表 |
- | DO-213AA | Bulk | Active | Standard | 125 V | 920 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 1 nA @ 125 V | - | 150mA | Military | MIL-S-19500-241 | Surface Mount | DO-213AA | -65°C ~ 175°C |
