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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
UFR3005R

UFR3005R

DIODE GEN PURP 30A DO4

Microchip Technology

3,658 -
UFR3005R

数据表

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity - 975 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 15 µA @ 50 V 140pF @ 10V, 1MHz 30A - - Stud Mount DO-4 (DO-203AA) -65°C ~ 175°C
UFR10260R

UFR10260R

DIODE GEN PURP 600V 100A DO203AB

Microchip Technology

9,436 -
UFR10260R

数据表

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 600 V 1 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 120 ns 25 µA @ 600 V 210pF @ 10V, 1MHz 100A - - Stud Mount DO-203AB (DO-5) -65°C ~ 175°C
UFR10280R

UFR10280R

DIODE GEN PURP 800V 100A DO203AB

Microchip Technology

2,206 -
UFR10280R

数据表

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 800 V 1 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 120 ns 25 µA @ 800 V 210pF @ 10V, 1MHz 100A - - Stud Mount DO-203AB (DO-5) -65°C ~ 175°C
UF120SM

UF120SM

DIODE GEN PURP 200V 1A DO213AB

Microchip Technology

4,723 -
UF120SM

数据表

- DO-213AB, MELF (Glass) Bulk Active Standard 200 V 1 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 200 V - 1A - - Surface Mount DO-213AB (MELF, LL41) -65°C ~ 175°C
JANS1N5617US

JANS1N5617US

DIODE GEN PURP 400V 1A D-5A

Microchip Technology

2,814 -
JANS1N5617US

数据表

- SQ-MELF, A Bulk Discontinued at Digi-Key Standard 400 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 µA @ 400 V 35pF @ 12V, 1MHz 1A Military MIL-PRF-19500/427 Surface Mount D-5A -65°C ~ 200°C
UES1305HR2/TR

UES1305HR2/TR

DIODE GEN PURP 300V 5A E AXIAL

Microchip Technology

8,907 -
UES1305HR2/TR

数据表

- E, Axial Tape & Reel (TR) Active Standard 300 V 1.25 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns - - 5A - - Through Hole E, Axial -
JANTX1N1206AR

JANTX1N1206AR

RECTIFIER

Microchip Technology

5,087 -
JANTX1N1206AR

数据表

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 600 V 1.35 V @ 38 A Standard Recovery >500ns, > 200mA (Io) - 5 µA @ 600 V - 12A Military MIL-PRF-19500/260 Stud Mount DO-203AA (DO-4) -65°C ~ 150°C
JANS1N5617US/TR

JANS1N5617US/TR

DIODE GEN PURP 400V 1A D-5A

Microchip Technology

4,714 -
JANS1N5617US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 400 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 µA @ 400 V 35pF @ 12V, 1MHz 1A Military MIL-PRF-19500/427 Surface Mount D-5A -65°C ~ 200°C
UES805R

UES805R

DIODE GEN PURP 300V 50A DO5

Microchip Technology

6,360 -
UES805R

数据表

- DO-203AB, DO-5, Stud Bulk Active Standard, Reverse Polarity 300 V 1.25 V @ 50 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns - - 50A - - Stud Mount DO-5 (DO-203AB) -
1N6098

1N6098

DIODE SCHOTTKY 40V 50A DO5

Microchip Technology

7,514 -
1N6098

数据表

- DO-203AB, DO-5, Stud Bulk Active Schottky 40 V 600 mV @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 5 mA @ 30 V - 50A - - Stud Mount DO-5 (DO-203AB) -65°C ~ 150°C
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