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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N5418

1N5418

DIODE GEN PURP 400V 3A B SQ-MELF

Microchip Technology

384 -
1N5418

数据表

- B, Axial Bulk Active Standard 400 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 400 V - 3A - - Through Hole B, Axial -65°C ~ 175°C
1N5809

1N5809

DIODE GEN PURP 100V 3A AXIAL

Microchip Technology

210 -
1N5809

数据表

- B, Axial Bulk Active Standard 100 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz 3A - - Through Hole B, Axial -65°C ~ 175°C
UES1303SM/TR

UES1303SM/TR

DIODE GEN PURP 150V 8A D-5B

Microchip Technology

5,299 -
UES1303SM/TR

数据表

- SQ-MELF, E Tape & Reel (TR) Active Standard 150 V 925 mV @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - 8A - - Surface Mount D-5B -
UES1303SM-1/TR

UES1303SM-1/TR

DIODE GP 150V 8A SQ-MELF B

Microchip Technology

4,158 -
UES1303SM-1/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 150 V 1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V - 8A - - Surface Mount B, SQ-MELF -
JANTX1N5711-1

JANTX1N5711-1

DIODE SCHOTTKY 70V 33MA DO35

Microchip Technology

132 -
JANTX1N5711-1

数据表

- DO-204AH, DO-35, Axial Bulk Active Schottky 70 V 410 mV @ 1 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 2pF @ 0V, 1MHz 33mA Military MIL-PRF-19500/444 Through Hole DO-204AH (DO-35) -65°C ~ 150°C
1N5811US

1N5811US

DIODE GEN PURP 150V 3A B SQ-MELF

Microchip Technology

815 -
1N5811US

数据表

- SQ-MELF, B Bulk Active Standard 150 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz 3A - - Surface Mount B, SQ-MELF -65°C ~ 175°C
1N6638US

1N6638US

DIODE GEN PURP 125V 300MA D-5D

Microchip Technology

541 -
1N6638US

数据表

- SQ-MELF, D Bulk Active Standard 125 V 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4.5 ns 500 nA @ 125 V 2.5pF @ 0V, 1MHz 300mA - - Surface Mount D-5D -65°C ~ 175°C
JANS1N5809/TR

JANS1N5809/TR

DIODE GEN PURP 100V 3A

Microchip Technology

3,167 -
JANS1N5809/TR

数据表

- B, Axial Tape & Reel (TR) Active Standard 100 V 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz 3A Military MIL-PRF-19500/477 Through Hole B, Axial -65°C ~ 175°C
S304120

S304120

DIODE GEN PURP 1.2KV 40A DO5

Microchip Technology

9,473 -
S304120

数据表

- DO-203AB, DO-5, Stud Bulk Active Standard 1200 V 1.9 V @ 40 A Standard Recovery >500ns, > 200mA (Io) 5 µs 10 µA @ 1200 V - 40A - - Chassis, Stud Mount DO-5 -
S304100

S304100

DIODE GEN PURP 1KV 40A DO5

Microchip Technology

3,862 -
S304100

数据表

- DO-203AB, DO-5, Stud Bulk Active Standard 1000 V 1.19 V @ 90 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1000 V - 40A - - Stud Mount DO-5 (DO-203AB) -65°C ~ 200°C
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