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单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N5615

1N5615

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

270 -
1N5615

数据表

- A, Axial Bulk Active Standard 200 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 200 V 45pF @ 12V, 1MHz 1A - - Through Hole A, Axial -65°C ~ 175°C
1N1346R

1N1346R

DIODE GEN PURP 400V 16A DO4

Microchip Technology

7,574 -
1N1346R

数据表

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 400 V 1.3 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 400 V - 16A - - Stud Mount DO-4 (DO-203AA) -65°C ~ 200°C
1N1346AR

1N1346AR

DIODE GEN PURP 400V 16A DO4

Microchip Technology

6,387 -
1N1346AR

数据表

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 400 V 1.3 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 400 V - 16A - - Stud Mount DO-4 (DO-203AA) -65°C ~ 200°C
1N5417

1N5417

DIODE GEN PURP 200V 3A B AXIAL

Microchip Technology

1,183 -
1N5417

数据表

- Axial Bulk Active Standard 200 V 1.5 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 1 µA @ 200 V - 3A - - Through Hole B, Axial -65°C ~ 175°C
1N1399

1N1399

DIODE GEN PURP 200V 100A DO205AA

Microchip Technology

7,214 -
1N1399

数据表

- DO-205AA, DO-8, Stud Bulk Active Standard 200 V 1.2 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 200 V - 100A - - Stud Mount DO-205AA (DO-8) -65°C ~ 200°C
1N1402

1N1402

DIODE GEN PURP 500V 100A DO205AA

Microchip Technology

6,910 -
1N1402

数据表

- DO-205AA, DO-8, Stud Bulk Active Standard 500 V 1.2 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 500 V - 100A - - Stud Mount DO-205AA (DO-8) -65°C ~ 200°C
1N1612A

1N1612A

DIODE GEN PURP 50V 5A DO4

Microchip Technology

2,906 -
1N1612A

数据表

- DO-203AA, DO-4, Stud Bulk Active Standard 50 V 1.3 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 50 V - 5A - - Stud Mount DO-4 (DO-203AA) -65°C ~ 200°C
1N1128R

1N1128R

DIODE GEN PURP REV 600V 12A DO4

Microchip Technology

7,800 -
1N1128R

数据表

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 600 V 1.2 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V - 12A - - Stud Mount DO-4 (DO-203AA) -65°C ~ 200°C
JANTX1N5615

JANTX1N5615

DIODE GEN PURP 200V 1A A-PAK

Microchip Technology

2,371 -
JANTX1N5615

数据表

- A, Axial Bulk Active Standard 200 V 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 200 V 45pF @ 12V, 1MHz 1A Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
1N1396

1N1396

DIODE GEN PURP 50V 100A DO205AA

Microchip Technology

4,283 -
1N1396

数据表

- DO-205AA, DO-8, Stud Bulk Active Standard 50 V 1.2 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 50 V - 100A - - Stud Mount DO-205AA (DO-8) -65°C ~ 200°C
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