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单个二极管
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
JANTX1N5189DIODE GEN PURP 500V 3A B Microchip Technology |
8,721 | - |
|
数据表 |
- | Axial | Bulk | Active | Standard | 500 V | 1.5 V @ 9 A | Fast Recovery =< 500ns, > 200mA (Io) | 300 ns | 2 µA @ 500 V | - | 3A | Military | MIL-PRF-19500/424 | Through Hole | B | -65°C ~ 175°C |
|
|
JAN1N6626USDIODE GEN PURP 220V 1.75A D-5B Microchip Technology |
2,372 | - |
|
数据表 |
- | SQ-MELF, E | Bulk | Active | Standard | 220 V | 1.35 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 220 V | 40pF @ 10V, 1MHz | 1.75A | Military | MIL-PRF-19500/590 | Surface Mount | D-5B | -65°C ~ 150°C |
|
|
JAN1N6073DIODE GEN PURP 50V 850MA A-PAK Microchip Technology |
7,697 | - |
|
数据表 |
- | A, Axial | Bulk | Active | Standard | 50 V | 2.04 V @ 9.4 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 1 µA @ 50 V | - | 850mA | Military | MIL-PRF-19500/503 | Through Hole | A, Axial | -65°C ~ 155°C |
|
JAN1N6621USDIODE GEN PURP 75V 200MA D-5A Microchip Technology |
9,765 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 75 V | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 20 ns | 500 nA @ 75 V | 2.8pF @ 1.5V, 1MHz | 200mA | Military | MIL-PRF-19500/116 | Surface Mount | D-5A | -65°C ~ 200°C |
|
|
JAN1N6622USDIODE GEN PURP 660V 1.2A D-5A Microchip Technology |
2,259 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 660 V | 1.4 V @ 1.2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 500 nA @ 660 V | 10pF @ 10V, 1MHz | 1.2A | Military | MIL-PRF-19500/585 | Surface Mount | D-5A | -65°C ~ 150°C |
|
|
JAN1N6624USDIODE GEN PURP 990V 1A D-5A Microchip Technology |
9,037 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 990 V | 1.55 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 500 nA @ 990 V | 10pF @ 10V, 1MHz | 1A | Military | MIL-PRF-19500/585 | Surface Mount | D-5A | -65°C ~ 150°C |
|
|
JAN1N6625USDIODE GEN PURP 1.1KV 1A D-5A Microchip Technology |
5,376 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 1100 V | 1.75 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 1 µA @ 1100 V | 10pF @ 10V, 1MHz | 1A | Military | MIL-PRF-19500/585 | Surface Mount | D-5A | -65°C ~ 150°C |
|
JANTXV1N5552USDIODE GEN PURP 600V 3A D-5B Microchip Technology |
2,700 | - |
|
数据表 |
- | SQ-MELF, E | Bulk | Active | Standard | 600 V | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 600 V | - | 3A | Military | MIL-PRF-19500/420 | Surface Mount | D-5B | -65°C ~ 175°C |
|
JANTXV1N5553DIODE GEN PURP 800V 5A AXIAL Microchip Technology |
3,062 | - |
|
数据表 |
- | B, Axial | Bulk | Active | Standard | 800 V | 1.3 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 800 V | - | 5A | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
|
1N6627USDIODE GEN PURP 440V 1.75A A-MELF Microchip Technology |
5,209 | - |
|
数据表 |
- | SQ-MELF, A | Bulk | Active | Standard | 440 V | 1.35 V @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 30 ns | 2 µA @ 440 V | 40pF @ 10V, 1MHz | 1.75A | - | - | Surface Mount | A-MELF | -65°C ~ 150°C |
