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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 电流 - 平均整流(Io) 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
MSC030SDA070BCT

MSC030SDA070BCT

DIODE SIL CARB 700V 60A TO247-3

Microchip Technology

6,797 -
MSC030SDA070BCT

数据表

- TO-247-3 Tube Active SiC (Silicon Carbide) Schottky 700 V 1.8 V @ 30 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 700 V 1200pF @ 1V, 1MHz 60A - - Through Hole TO-247-3 -55°C ~ 175°C
JANTXV1N6641US/TR

JANTXV1N6641US/TR

SIGNAL OR COMPUTER DIODE

Microchip Technology

6,151 -
JANTXV1N6641US/TR

数据表

- SQ-MELF, D Tape & Reel (TR) Active Standard 50 V 1.1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 5 ns 100 nA @ 50 V - 300mA Military MIL-PRF-19500/609 Surface Mount D-5D -65°C ~ 175°C
JANTXV1N6640US

JANTXV1N6640US

DIODE GEN PURP 50V 300MA D-5D

Microchip Technology

8,361 -
JANTXV1N6640US

数据表

- SQ-MELF, D Bulk Active Standard 50 V 1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 90 µA @ 50 V - 300mA Military MIL-PRF-19500/609 Surface Mount D-5D -65°C ~ 175°C
JANTXV1N6640US/TR

JANTXV1N6640US/TR

DIODE GEN PURP 50V 300MA D-5D

Microchip Technology

5,356 -
JANTXV1N6640US/TR

数据表

- SQ-MELF, D Tape & Reel (TR) Active Standard 50 V 1 V @ 200 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 90 µA @ 50 V - 300mA Military MIL-PRF-19500/609 Surface Mount D-5D -65°C ~ 175°C
JANTXV1N5802US

JANTXV1N5802US

DIODE GEN PURP 50V 1A D-5A

Microchip Technology

7,696 -
JANTXV1N5802US

数据表

- SQ-MELF, A Bulk Discontinued at Digi-Key Standard 50 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 50 V 25pF @ 10V, 1MHz 1A Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
JANTXV1N5804US/TR

JANTXV1N5804US/TR

DIODE GEN PURP 100V 1A D-5A

Microchip Technology

4,414 -
JANTXV1N5804US/TR

数据表

- SQ-MELF, A Tape & Reel (TR) Active Standard 100 V 875 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 1 µA @ 100 V 25pF @ 10V, 1MHz 1A Military MIL-PRF-19500/477 Surface Mount D-5A -65°C ~ 175°C
1N4948US/TR

1N4948US/TR

UFR,FRR

Microchip Technology

4,980 -
1N4948US/TR

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - -
JANTX1N6625US

JANTX1N6625US

DIODE GEN PURP 1.1KV 1A D-5A

Microchip Technology

7,353 -
JANTX1N6625US

数据表

- SQ-MELF, A Bulk Active Standard 1100 V 1.75 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 500 nA @ 1100 V 10pF @ 10V, 1MHz 1A Military MIL-PRF-19500/585 Surface Mount D-5A -65°C ~ 150°C
CD6761

CD6761

DIODE SCHOTTKY 100V 1A DIE

Microchip Technology

4,889 -
CD6761

数据表

- Die Tape & Reel (TR) Active Schottky 100 V 750 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 100 V - 1A Military MIL-PRF-19500/586 Surface Mount Die -55°C ~ 125°C
CDLL6857/TR

CDLL6857/TR

DIODE SCHOTTKY 20V 150MA DO213AA

Microchip Technology

5,077 -
CDLL6857/TR

数据表

- DO-213AA Tape & Reel (TR) Active Schottky 20 V 750 mV @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V 4.5pF @ 0V, 1MHz 150mA - - Surface Mount DO-213AA -65°C ~ 150°C
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