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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IDH20G65C6XKSA1DIODE SIL CARB 650V 41A TO220-2 Infineon Technologies |
1,342 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.35 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 67 µA @ 420 V | 970pF @ 1V, 1MHz | 41A | - | - | Through Hole | PG-TO220-2 | -55°C ~ 175°C |
|
|
IDH20G65C5XKSA2DIODE SIL CARB 650V 20A TO220-1 Infineon Technologies |
864 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 210 µA @ 650 V | 590pF @ 1V, 1MHz | 20A | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
IDW20G65C5XKSA1DIODE SIL CARB 650V 20A TO247-3 Infineon Technologies |
270 | - |
|
数据表 |
CoolSiC™+ | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 210 µA @ 650 V | 590pF @ 1V, 1MHz | 20A | - | - | Through Hole | PG-TO247-3-41 | -55°C ~ 175°C |
|
|
IDH20G120C5XKSA1DIODE SIL CARB 1.2KV 56A TO220-1 Infineon Technologies |
974 | - |
|
数据表 |
CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 123 µA @ 1200 V | 1050pF @ 1V, 1MHz | 56A | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
IDK20G120C5XTMA1DIODE SIL CARB 1.2KV 56A TO263-1 Infineon Technologies |
1,079 | - |
|
数据表 |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | - | 123 µA @ 1200 V | 1050pF @ 1V, 1MHz | 56A | - | - | Surface Mount | PG-TO263-2-1 | -55°C ~ 175°C |
|
IDWD30G120C5XKSA1DIODE SIL CARB 1.2KV 87A TO247-2 Infineon Technologies |
652 | - |
|
数据表 |
CoolSiC™+ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.65 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 248 µA @ 1200 V | 1980pF @ 1V, 1MHz | 87A | - | - | Through Hole | PG-TO247-2 | -55°C ~ 175°C |
|
IDWD40G120C5XKSA1DIODE SIL CARB 1.2KV 110A TO247 Infineon Technologies |
132 | - |
|
数据表 |
CoolSiC™+ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.65 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 332 µA @ 1200 V | 2592pF @ 1V, 1MHz | 110A | - | - | Through Hole | PG-TO247-2 | -55°C ~ 175°C |
|
IDC40S120C5X7SA1SIC CHIP Infineon Technologies |
2,118 | - |
|
数据表 |
- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
BAS116E6433HTMA1DIODE GEN PURP 80V 250MA SOT23 Infineon Technologies |
2,535 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Last Time Buy | Standard | 80 V | 1.25 V @ 150 mA | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 nA @ 75 V | 2pF @ 0V, 1MHz | 250mA | - | - | Surface Mount | PG-SOT23 | 150°C (Max) |
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|
BAS21E6433HTMA1DIODE GEN PURP 200V 250MA SOT23 Infineon Technologies |
4,986 | - |
|
数据表 |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Last Time Buy | Standard | 200 V | 1.25 V @ 200 mA | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 100 nA @ 200 V | 5pF @ 0V, 1MHz | 250mA | - | - | Surface Mount | PG-SOT23 | 150°C (Max) |
