Infineon Technologies|单个二极管 - 页 32

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	技术	电压 - 直流反向 (Vr)（最大值）	电压 - 正向 (Vf)（最大值）@ If	速度	反向恢复时间 (trr)	电流 - 反向漏电 @ Vr	电容 @ Vr, F	电流 - 平均整流（Io）	等级	认证	安装类型	供应商设备封装	工作温度 - 结点
IDM05G120C5XTMA1 DIODE SIL CARB 1.2KV 5A TO252-2 Infineon Technologies	1,779	-	询价单	数据表	CoolSiC™+	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	1.8 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	33 µA @ 1200 V	301pF @ 1V, 1MHz	5A	-	-	Surface Mount	PG-TO252-2	-55°C ~ 175°C
BAS 16-02W E6327 DIODE GEN PURP 80V 200MA SCD-80 Infineon Technologies	8,506	-	询价单	数据表	-	SC-80	Tape & Reel (TR)	Obsolete	Standard	80 V	1.25 V @ 150 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	1 µA @ 75 V	2pF @ 0V, 1MHz	200mA	-	-	Surface Mount	SCD-80	150°C (Max)
IDH05G120C5XKSA1 DIODE SIL CARB 1.2KV 5A TO220-1 Infineon Technologies	899	-	询价单	数据表	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.8 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	33 µA @ 1200 V	301pF @ 1V, 1MHz	5A	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
IDH10G65C6XKSA1 DIODE SIL CARB 650V 24A TO220-2 Infineon Technologies	869	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.35 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	33 µA @ 420 V	495pF @ 1V, 1MHz	24A	-	-	Through Hole	PG-TO220-2	-55°C ~ 175°C
IDW75D65D1XKSA1 DIODE GEN PURP 650V 150A TO247-3 Infineon Technologies	2,129	-	询价单	数据表	-	TO-247-3	Tube	Active	Standard	650 V	1.7 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	108 ns	40 µA @ 650 V	-	150A	-	-	Through Hole	PG-TO247-3	-40°C ~ 175°C
IDM10G120C5XTMA1 DIODE SIL CARB 1.2KV 38A TO252-2 Infineon Technologies	4,234	-	询价单	数据表	CoolSiC™+	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	62 µA @ 12 V	29pF @ 800V, 1MHz	38A	-	-	Surface Mount	PG-TO252-2	-55°C ~ 150°C
IDH10G120C5XKSA1 DIODE SIL CARB 1.2KV 10A TO220-1 Infineon Technologies	1,175	-	询价单	数据表	CoolSiC™+	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	1200 V	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	62 µA @ 1200 V	525pF @ 1V, 1MHz	10A	-	-	Through Hole	PG-TO220-2-1	-55°C ~ 175°C
IDDD16G65C6XTMA1 DIODE SIL CARB 650V 43A HDSOP-10 Infineon Technologies	4,841	-	询价单	数据表	CoolSiC™+	10-PowerSOP Module	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	-	No Recovery Time > 500mA (Io)	0 ns	53 µA @ 420 V	783pF @ 1V, 1MHz	43A	-	-	Surface Mount	PG-HDSOP-10-1	-55°C ~ 175°C
IDH16G65C6XKSA1 DIODE SIL CARB 650V 34A TO220-2 Infineon Technologies	3,011	-	询价单	数据表	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	1.35 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	53 µA @ 420 V	783pF @ 1V, 1MHz	34A	-	-	Through Hole	PG-TO220-2	-55°C ~ 175°C
BAS 16-02V E6327 DIODE GEN PURP 80V 200MA SC79-2 Infineon Technologies	2,200	-	询价单	数据表	-	SC-79, SOD-523	Tape & Reel (TR)	Obsolete	Standard	80 V	1.25 V @ 150 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	1 µA @ 75 V	2pF @ 0V, 1MHz	200mA	-	-	Surface Mount	PG-SC79-2	150°C (Max)

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