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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ND242S10KHPSA1DIODE GEN PURP 1KV 261A PB50ND-1 Infineon Technologies |
5,433 | - |
|
数据表 |
- | Module | Tray | Obsolete | Standard | 1000 V | - | Standard Recovery >500ns, > 200mA (Io) | - | 200 mA @ 1000 V | - | 261A | - | - | Chassis Mount | BG-PB50ND-1 | -40°C ~ 135°C |
|
|
ND260N12KHPSA1DIODE GP 1.2KV 104A PB50ND-1 Infineon Technologies |
7,524 | - |
|
数据表 |
- | Module | Tray | Obsolete | Standard | 1200 V | - | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 1200 V | - | 104A | - | - | Chassis Mount | BG-PB50ND-1 | -40°C ~ 135°C |
|
|
ND260N14KHPSA1DIODE GP 1.4KV 260A PB50ND-1 Infineon Technologies |
3,319 | - |
|
数据表 |
- | Module | Tray | Obsolete | Standard | 1400 V | - | Standard Recovery >500ns, > 200mA (Io) | - | 30 mA @ 1400 V | - | 260A | - | - | Chassis Mount | BG-PB50ND-1 | -40°C ~ 135°C |
|
|
ND261N26KHPSA1DIODE GP 2.6KV 260A PB50ND-1 Infineon Technologies |
8,022 | - |
|
数据表 |
- | Module | Tray | Obsolete | Standard | 2600 V | - | Standard Recovery >500ns, > 200mA (Io) | - | 40 mA @ 2600 V | - | 260A | - | - | Chassis Mount | BG-PB50ND-1 | -40°C ~ 135°C |
|
ND350N12KHPSA1DIODE GP 1.2KV 350A PB50ND-1 Infineon Technologies |
4,156 | - |
|
数据表 |
- | Module | Tray | Obsolete | Standard | 1200 V | - | Standard Recovery >500ns, > 200mA (Io) | - | 30 mA @ 1200 V | - | 350A | - | - | Chassis Mount | BG-PB50ND-1 | -40°C ~ 135°C |
|
|
ND350N16KHPSA1DIODE GP 1.6KV 350A PB50ND-1 Infineon Technologies |
2,715 | - |
|
数据表 |
- | Module | Tray | Obsolete | Standard | 1600 V | - | Standard Recovery >500ns, > 200mA (Io) | - | 30 mA @ 1600 V | - | 350A | - | - | Chassis Mount | BG-PB50ND-1 | -40°C ~ 135°C |
|
BAS3010S02LRHE6327XTSA1DIODE SCHOTTKY 30V 1A TSLP-2-17 Infineon Technologies |
27,898 | - |
|
数据表 |
- | SOD-882 | Tape & Reel (TR) | Active | Schottky | 30 V | 650 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300 µA @ 30 V | 15pF @ 5V, 1MHz | 1A | - | - | Surface Mount | PG-TSLP-2-17 | -55°C ~ 150°C |
|
DZ950N44KHPSA1DIODE GEN PURP 4.4KV 950A MODULE Infineon Technologies |
1 | - |
|
数据表 |
- | Module | Tray | Active | Standard | 4400 V | 1.78 V @ 3000 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 mA @ 4400 V | - | 950A | - | - | Chassis Mount | Module | -40°C ~ 150°C |
|
IDB30E120ATMA1DIODE GP 1.2KV 50A TO263-3-2 Infineon Technologies |
2,748 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | Standard | 1200 V | 2.15 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 243 ns | 100 µA @ 1200 V | - | 50A | - | - | Surface Mount | PG-TO263-3-2 | -55°C ~ 150°C |
|
IDH04G65C6XKSA1DIODE SIL CARB 650V 12A TO220-2 Infineon Technologies |
6,045 | - |
|
数据表 |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 1.35 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 14 µA @ 420 V | 205pF @ 1V, 1MHz | 12A | - | - | Through Hole | PG-TO220-2 | -55°C ~ 175°C |
