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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N3881DIODE GEN PURP 200V 6A DO4 GeneSiC Semiconductor |
414 | - |
|
数据表 |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 200 V | 1.4 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 15 µA @ 50 V | - | 6A | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 150°C |
|
|
GD20MPS12HDIODE SIL CARB 1.2KV 39A TO247-2 GeneSiC Semiconductor |
2,961 | - |
|
数据表 |
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 737pF @ 1V, 1MHz | 39A | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GD30MPS12HDIODE SIL CARB 1.2KV 55A TO247-2 GeneSiC Semiconductor |
503 | - |
|
数据表 |
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 µA @ 1200 V | 1101pF @ 1V, 1MHz | 55A | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
|
1N1190ARDIODE GEN PURP REV 600V 40A DO5 GeneSiC Semiconductor |
869 | - |
|
数据表 |
- | DO-203AB, DO-5, Stud | Bulk | Active | Standard, Reverse Polarity | 600 V | 1.1 V @ 40 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | 40A | - | - | Chassis, Stud Mount | DO-5 | -65°C ~ 190°C |
|
|
GD30MPS12J-TRDIODE SIL CARB 1.2KV 59A TO263-7 GeneSiC Semiconductor |
2,036 | - |
|
数据表 |
SiC Schottky MPS™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 1101pF @ 1V, 1MHz | 59A | - | - | Surface Mount | TO-263-7 | -55°C ~ 175°C |
|
GD15MPS17HDIODE SIL CARB 1.7KV 36A TO247-2 GeneSiC Semiconductor |
1,214 | - |
|
数据表 |
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 1.8 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 1082pF @ 1V, 1MHz | 36A | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
GD50MPS12HDIODE SIL CARB 1.2KV 92A TO247-2 GeneSiC Semiconductor |
124 | - |
|
数据表 |
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 1200 V | 1835pF @ 1V, 1MHz | 92A | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
|
GD10MPS12HDIODE SIL CARB 1.2KV 10A TO247-2 GeneSiC Semiconductor |
540 | - |
|
数据表 |
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | - | No Recovery Time > 500mA (Io) | 0 ns | - | - | 10A | - | - | Through Hole | TO-247-2 | 175°C |
|
|
GD30MPS06HDIODE SIL CARB 650V 49A TO247-2 GeneSiC Semiconductor |
614 | - |
|
数据表 |
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | - | No Recovery Time > 500mA (Io) | - | - | 735pF @ 1V, 1MHz | 49A | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
|
|
GD20MPS12ADIODE SIL CARB 1.2KV 42A TO220-2 GeneSiC Semiconductor |
2,307 | - |
|
数据表 |
SiC Schottky MPS™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 737pF @ 1V, 1MHz | 42A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
