| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)(最大值) | 电压 - 正向 (Vf)(最大值)@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流(Io) | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
S300ZDIODE GP 2KV 300A DO205AB DO9 GeneSiC Semiconductor |
6,163 | - |
|
数据表 |
- | DO-205AB, DO-9, Stud | Bulk | Active | Standard | 2000 V | 1.2 V @ 300 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1600 V | - | 300A | - | - | Chassis, Stud Mount | DO-205AB (DO-9) | -60°C ~ 180°C |
|
S300ZRDIODE GP REV 2KV 300A DO205AB GeneSiC Semiconductor |
2,839 | - |
|
数据表 |
- | DO-205AB, DO-9, Stud | Bulk | Active | Standard, Reverse Polarity | 2000 V | 1.2 V @ 300 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1600 V | - | 300A | - | - | Chassis, Stud Mount | DO-205AB (DO-9) | -60°C ~ 180°C |
|
S380ZRDIODE GP REV 2KV 380A DO205AB GeneSiC Semiconductor |
6,357 | - |
|
数据表 |
- | DO-205AB, DO-9, Stud | Bulk | Active | Standard, Reverse Polarity | 2000 V | 1.2 V @ 380 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1600 V | - | 380A | - | - | Chassis, Stud Mount | DO-205AB (DO-9) | -60°C ~ 180°C |
|
S400KDIODE GP 800V 400A DO205AB DO9 GeneSiC Semiconductor |
6,813 | - |
|
数据表 |
- | DO-205AB, DO-9, Stud | Bulk | Active | Standard | 800 V | 1.2 V @ 400 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | 400A | - | - | Chassis, Stud Mount | DO-205AB (DO-9) | -60°C ~ 200°C |
|
S400KRDIODE GP REV 800V 400A DO205AB GeneSiC Semiconductor |
3,571 | - |
|
数据表 |
- | DO-205AB, DO-9, Stud | Bulk | Active | Standard, Reverse Polarity | 800 V | 1.2 V @ 400 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | 400A | - | - | Chassis, Stud Mount | DO-205AB (DO-9) | -60°C ~ 200°C |
|
S400QDIODE GP 1.2KV 400A DO205AB DO9 GeneSiC Semiconductor |
3,416 | - |
|
数据表 |
- | DO-205AB, DO-9, Stud | Bulk | Active | Standard | 1200 V | 1.2 V @ 400 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | 400A | - | - | Chassis, Stud Mount | DO-205AB (DO-9) | -60°C ~ 200°C |
|
S400QRDIODE GP REV 1.2KV 400A DO205AB GeneSiC Semiconductor |
4,366 | - |
|
数据表 |
- | DO-205AB, DO-9, Stud | Bulk | Active | Standard, Reverse Polarity | 1200 V | 1.2 V @ 400 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | 400A | - | - | Chassis, Stud Mount | DO-205AB (DO-9) | -60°C ~ 200°C |
|
S400YDIODE GP 1.6KV 400A DO205AB DO9 GeneSiC Semiconductor |
2,650 | - |
|
数据表 |
- | DO-205AB, DO-9, Stud | Bulk | Active | Standard | 1600 V | 1.2 V @ 400 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | 400A | - | - | Chassis, Stud Mount | DO-205AB (DO-9) | -60°C ~ 200°C |
|
S400YRDIODE GP REV 1.6KV 400A DO205AB GeneSiC Semiconductor |
4,194 | - |
|
数据表 |
- | DO-205AB, DO-9, Stud | Bulk | Active | Standard, Reverse Polarity | 1600 V | 1.2 V @ 400 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | 400A | - | - | Chassis, Stud Mount | DO-205AB (DO-9) | -60°C ~ 200°C |
|
|
1N8030-GADIODE SIL CARB 650V 750MA TO257 GeneSiC Semiconductor |
8,359 | - |
|
数据表 |
- | TO-257-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.39 V @ 750 mA | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | 76pF @ 1V, 1MHz | 750mA | - | - | Through Hole | TO-257 | -55°C ~ 250°C |