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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N8031-GADIODE SIL CARBIDE 650V 1A TO276 GeneSiC Semiconductor |
9,043 | - |
|
数据表 |
- | TO-276AA | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.5 V @ 1 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | 76pF @ 1V, 1MHz | 1A | - | - | Through Hole | TO-276 | -55°C ~ 250°C |
|
1N8032-GADIODE SIL CARB 650V 2.5A TO257 GeneSiC Semiconductor |
9,538 | - |
|
数据表 |
- | TO-257-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.3 V @ 2.5 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | 274pF @ 1V, 1MHz | 2.5A | - | - | Through Hole | TO-257 | -55°C ~ 250°C |
|
|
1N8024-GADIODE SIL CARB 1.2KV 750MA TO257 GeneSiC Semiconductor |
6,134 | - |
|
数据表 |
- | TO-257-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.74 V @ 750 mA | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 66pF @ 1V, 1MHz | 750mA | - | - | Through Hole | TO-257 | -55°C ~ 250°C |
|
|
1N8033-GADIODE SIL CARB 650V 4.3A TO276 GeneSiC Semiconductor |
2,273 | - |
|
数据表 |
- | TO-276AA | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.65 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | 274pF @ 1V, 1MHz | 4.3A | - | - | Surface Mount | TO-276 | -55°C ~ 250°C |
|
|
1N8026-GADIODE SIL CARBIDE 1.2KV 8A TO257 GeneSiC Semiconductor |
6,833 | - |
|
数据表 |
- | TO-257-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.6 V @ 2.5 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 237pF @ 1V, 1MHz | 8A | - | - | Through Hole | TO-257 | -55°C ~ 250°C |
|
|
1N8034-GADIODE SIL CARB 650V 9.4A TO257 GeneSiC Semiconductor |
6,554 | - |
|
数据表 |
- | TO-257-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.34 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | 1107pF @ 1V, 1MHz | 9.4A | - | - | Through Hole | TO-257 | -55°C ~ 250°C |
|
|
1N8035-GADIODE SIL CARB 650V 14.6A TO276 GeneSiC Semiconductor |
3,320 | - |
|
数据表 |
- | TO-276AA | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1.5 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | 1107pF @ 1V, 1MHz | 14.6A | - | - | Surface Mount | TO-276 | -55°C ~ 250°C |
|
GAP05SLT80-220DIODE SCHOTTKY 8KV 50MA AXIAL GeneSiC Semiconductor |
9,212 | - |
|
数据表 |
- | Axial | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 8000 V | 4.6 V @ 50 mA | No Recovery Time > 500mA (Io) | 0 ns | 3.8 µA @ 8000 V | 25pF @ 1V, 1MHz | 50mA | - | - | Through Hole | - | -55°C ~ 175°C |
|
GD02MPS12EDIODE SIL CARB 1.2KV 8A TO252-2 GeneSiC Semiconductor |
2,809 | - |
|
数据表 |
SiC Schottky MPS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 1200 V | 73pF @ 1V, 1MHz | 8A | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
|
GD30MPS06ADIODE SIL CARB 650V 30A TO220-2 GeneSiC Semiconductor |
1,744 | - |
|
数据表 |
SiC Schottky MPS™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | - | No Recovery Time > 500mA (Io) | 0 ns | - | - | 30A | - | - | Through Hole | TO-220-2 | 175°C |
