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| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | 技术 | 电压 - 直流反向 (Vr)（最大值） | 电压 - 正向 (Vf)（最大值）@ If | 速度 | 反向恢复时间 (trr) | 电流 - 反向漏电 @ Vr | 电容 @ Vr, F | 电流 - 平均整流（Io） | 等级 | 认证 | 安装类型 | 供应商设备封装 | 工作温度 - 结点 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GC02MPS12-220DIODE SIL CARB 1.2KV 12A TO220-2 GeneSiC Semiconductor |
3,154 | - |
|
数据表 |
SiC Schottky MPS™ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 2 µA @ 1200 V | 127pF @ 1V, 1MHz | 12A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GB01SLT12-252DIODE SIL CARBIDE 1.2KV 1A TO252 GeneSiC Semiconductor |
6,169 | - |
|
数据表 |
SiC Schottky MPS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 1 A | No Recovery Time > 500mA (Io) | 0 ns | 2 µA @ 1200 V | 69pF @ 1V, 1MHz | 1A | - | - | Surface Mount | TO-252 | -55°C ~ 175°C |
|
GB01SLT12-220DIODE SIL CARB 1.2KV 1A TO220-2 GeneSiC Semiconductor |
5,308 | - |
|
数据表 |
- | TO-220-2 | Bulk | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 1 A | No Recovery Time > 500mA (Io) | 0 ns | 2 µA @ 1200 V | 69pF @ 1V, 1MHz | 1A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GB02SLT12-252DIODE SIL CARBIDE 1.2KV 5A TO252 GeneSiC Semiconductor |
6,442 | - |
|
数据表 |
SiC Schottky MPS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 131pF @ 1V, 1MHz | 5A | - | - | Surface Mount | TO-252 | -55°C ~ 175°C |
|
|
GB02SLT12-220DIODE SIL CARB 1.2KV 2A TO220-2 GeneSiC Semiconductor |
7,000 | - |
|
数据表 |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 138pF @ 1V, 1MHz | 2A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GKR26/04DIODE GEN PURP 400V 25A DO4 GeneSiC Semiconductor |
8,503 | - |
|
数据表 |
- | DO-203AA, DO-4, Stud | Bulk | Obsolete | Standard | 400 V | 1.55 V @ 60 A | Standard Recovery >500ns, > 200mA (Io) | - | 4 mA @ 400 V | - | 25A | - | - | Chassis, Stud Mount | DO-4 | -40°C ~ 180°C |
|
|
GE08MPS06ADIODE SIL CARB 650V 15A TO220-2 GeneSiC Semiconductor |
3 | - |
|
数据表 |
SiC Schottky MPS™ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | - | No Recovery Time > 500mA (Io) | - | - | 373pF @ 1V, 1MHz | 15A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
|
GB02SLT06-214SIC SCHOTTKY DIODE 650V 2A GeneSiC Semiconductor |
3,680 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
GC08MPS12-220DIODE SIL CARB 1.2KV 43A TO220-2 GeneSiC Semiconductor |
4,827 | - |
|
数据表 |
SiC Schottky MPS™ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 7 µA @ 1200 V | 545pF @ 1V, 1MHz | 43A | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
|
GD30MPS06JDIODE SIL CARB 650V 51A TO263-7 GeneSiC Semiconductor |
540 | - |
|
数据表 |
SiC Schottky MPS™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | - | No Recovery Time > 500mA (Io) | - | - | 735pF @ 1V, 1MHz | 51A | - | - | Surface Mount | TO-263-7 | -55°C ~ 175°C |
